MA4AGFCP910-W - M/A-COM Technology Solutions, Inc.

AlGaAs Flip-Chip PIN Diode

100 MHz to 50 GHz

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA4AGFCP910

Features

•Lower Series Resistance, 5.2Ω

•Ultra Low Capacitance, 18 f F

•High Switching Cutoff Frequency, 50 GHz

•3 Nanosecond Switching Speed

•Driven by Standard TTL

•Silicon Nitride Passivation

•Polyimide Scratch Protection

Description and Applications

M/A-COM's MA4AGFCP910 is an Aluminum Gallium

Arsenide Flip-Chip PIN diode. These devices are

fabricated on OMCVD epitaxial wafers using a

process designed for high device uniformity and

extremely low parasitics. The diodes exhibit an

extremely low RC Product, ( 0.1 ps) and 3nS

switching characteristics.

They are fully passivated with silicon nitride and

have an additional layer of a polymer for scratch

protection. The protective coatings prevent damage

to the junction and the anode airbridge during

handling.

The 20 fF capacitance of the MA4AGFCP910 allows

use through mmwave switch and switched phase

shifter applications. This diode is designed for use in

pulsed or CW applications, where single digit nS

switching speed is required. For surface mount

assembly, the low capacitance of the

MA4AGFCP910 makes it ideal for use in microwave

multithrow switch assemblies, where the series

capacitance of each “off” port adversely loads the

input port and affects VSWR.

Top View Shown Is With Diode

Junction Up

Absolute Maximum Ratings

@ TA = +25 °C (Unless Otherwise Noted) 1

1. Operation of this device above any one of these parameters

may cause permanent damage.

Parameter Absolute Maximum

Operating Temperature -65 °C to +125 °C

Storage Temperature -65 °C to +150 °C

Junction Temperature +175 °C

Dissipated RF & DC Power 50 mW

RF C.W. Incident Power + 23 dBm C.W.

Mounting Temperature +300 °C for 10 seconds

Cathode

AlGaAs Flip-Chip PIN Diode

100 MHz to 50 GHz

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA4AGFCP910

Parameters and Test Conditions Symbol Units 10 GHz Reference Data 1,2

Min. Typ. Min. Typ.

Total Capacitance at –5 V Ct pF 0.018 0.018

RF Resistance at +10 mA Rs Ω 5.2

Forward Voltage at +10 mA Vf Volts 1.33

1 MHz & DC Specifications

Max.

0.021

1.4

Max.

.021

6.0

Reverse Breakdown Voltage at 10 uA3 Vb Volts 50 75

Minority Carrier Lifetime τL nS 4.0

Electrical Specifications @ TA = 25 °C

1. Capacitance is determined by measuring Single Series Diode Isolation in a 50 ohm line at 10 GHz.

2. Forward Series Resistance is determined by measuring Single Series Diode Insertion Loss in a 50 ohm line at 10 GHz

3. Reverse current will not exceed 10 microamperes at the Maximum Voltage Rating.

NOTES:

AlGaAs Flip-Chip PIN Diode

100 MHz to 50 GHz

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA4AGFCP910

Typical RF Performance

MA4AGFCP910

Typical Insertion Loss vs. Frequency

-0.8

-0.6

-0.4

-0.2

0.0

210 18 26 34 42 50

Frequency (GHz)

Loss (dB)

5mA 10mA 15mA

5 mA10 mA15 mA

AlGaAs Flip-Chip PIN Diode

100 MHz to 50 GHz

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA4AGFCP910

Typical RF Performance

MA4AGFCP910

Typical Return Loss vs. Frequency ( Either Port Direction )

-35

-30

-25

-20

-15

-10

-5

210 18 26 34 42 50

Frequency (GHz)

Return Loss (dB)

5mA 10mA 15mA

5 mA10 mA15 mA

AlGaAs Flip-Chip PIN Diode

100 MHz to 50 GHz

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA4AGFCP910

Typical RF Performance

MA4AGFCP910

Typical Isolation vs Frequency

-35

-30

-25

-20

-15

-10

-5

210 18 26 34 42 50

Frequency (GHz)

Isolation (dB)

0V 5V

AlGaAs Flip-Chip PIN Diode

100 MHz to 50 GHz

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA4AGFCP910

General Handling

These devices have a polymer layer which provides

scratch protection for the junction area and the

anode air bridge. Die can be handled with plastic

tweezers or picked and placed with a #27 tip

vacuum pencil.

Assembly Requirements using Electrically Conductive Ag Epoxy and Solder

These chips are designed to be inserted onto hard or soft substrates with the junction side down. They should

be mounted onto silk-screened circuits using Electrically Conductive Ag Epoxy, approximately 1-2 mils in

thickness and cured at approximately 90°C to 150 °C per manufacturer’s schedule. For extended cure times

> 30 minutes, temperatures must be below 200 °C.

Assembly Considerations

The following precautions should be observed to

avoid damaging these chips.

Cleanliness

These chips should be handled in a clean

environment. Do not attempt to clean die after

installation.

Static Sensitivity

Gallium arsenide PIN diodes are ESD sensitive and

can be damaged by static electricity. Proper ESD

techniques should be used when handling these

devices. These devices are rated Class 0, ( 0-199V )

per HBM MIL-STD-883, method 3015.7

[C = 100pF ±10%, R = 1.5kW ±1%]. Even though

tested die pass 50V ESD, they must be handled in a

static-free environment.

AlGaAs Flip-Chip PIN Diode

100 MHz to 50 GHz

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA4AGFCP910

Circuit Mounting Dimensions (Inches)

0.012

(2) PL

0.008

(2) PL

0.013

Ordering Information

Part Number Package

MA4AGFCP910 Die in Carrier

MA4AGFCP910-T Tape/Reel

MA4AGFCP910-W Wafer on Frame