2SK4181
No. A0999-1/4
Features
•Low ON-resistance, low input capacitance, ultrahigh-speed switching.
•Adoption of high reliability HVP process.
•Avalanche resistance guarantee.
•For use of lighting & etc.
•High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 525 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) ID7.5 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 30 A
Allowable Power Dissipation PD
Tc=25°C (SANYO’s ideal heat dissipation condition*1)
70 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single pulse) *2 EAS 34 mJ
Avalanche Current *3 IAV 7.5 A
*1 SANYO
’
s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*2 VDD=99V, L=1mH, IAV=7.5A
*3 L≤1mH, single pulse
Marking : K4181
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0999
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
10908QB TI IM TC-00001034
SANYO Semiconductors
DATA SHEET
2SK4181 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4181
No. A0999-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 525 V
Zero-Gate Voltage Drain Current IDSS VDS=420V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward T ransfer Admittance ⏐yfs⏐VDS=10V, ID=3.7A 1.9 3.8 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=3.7A, VGS=10V 0.71 0.92 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 600 pF
Output Capacitance Coss VDS=30V, f=1MHz 125 pF
Reverse T ransfer Capacitance Crss VDS=30V, f=1MHz 27 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns
Rise T ime trSee specified Test Circuit. 60 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 77 ns
Fall T ime tfSee specified Test Circuit. 38 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=7.5A 24 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=7.5A 4.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=7.5A 13.8 nC
Diode Forward Voltage VSD IS=7.5A, VGS=0V 0.9 1.2 V
Package Dimensions
unit : mm (typ)
7002-001
Switching Time Test Circuit Avalanche Resistance Test Circuit
6.2
7.8
8.2
0.2
0.4
4.2
1.0 1.0
5.08 2.54
2.54
8.4
10.0
1.2
0.3
0.6
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
12
3
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
PW=10μs
D.C.≤0.5%
P.G RGS=50Ω
G
S
D
ID=3.7A
RL=54Ω
VDD=200V
VOUT
2SK4181
VIN
10V
0V
VIN
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4181
2SK4181
No. A0999-3/4
3
1.0
0.1
2
7
5
2
3
2
7
10
5
Tc= --25°C
25
°
C
75°C
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance, ⏐yfs⏐ -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
⏐yfs⏐ -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
IT13099
IT13097
--50 --25 150
IT13101
IT13100
0.1 23 57 1.40.8 1.0 1.20.4 0.60.2
0.01
0.1
5
7
3
2
2
1.0
5
7
3
2
10
5
7
3
3
2
2
1.0 32357
10
0 25 50 75 100 125
ID=3.7A
--25°C
25°C
Tc=75
°C
VDS=20V
Tc=75
°
C
25
°
C
--
25
°
C
VGS=0V
IT13103
02010 30
100
2
3
10
5
2
7
1000
3
2
3
5
7
f=1MHz
105152030250
0
5
25
15
10
20
IT13098
5.5 6.0 6.5 7.0 7.5 108.0 8.5 9.0 9.55.0
0
0.5
1.0
3.0
1.5
2.5
2.0
0
0.2
0.4
1.6
1.0
1.2
1.4
0.8
0.6
IT13118
Tc=25°C
VGS=5V
10V
15V
VGS=10V
,
ID=3.7
A
8V
5040
Ciss
Crss
Coss
0.1 1.0 223 57 10
32357
100
10
7
5
3
2
7
3
5
2
IT13102
td(off)
td(on)
VDD=200V
VGS=10V
tf
tr
6V
25
°
C
75°C
Tc= --25°C
642 8 10 2012 14 16 180
0
4
2
8
6
24
14
20
22
10
12
18
16
VDS=20V
2SK4181
No. A0999-4/4
PS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
A S O
VGS -- Qg
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
0
025 50 75 100 125 150
100
80
60
20
40
120
175
IT10478
IT13105
0.01
0.1
2
3
5
7
2
1.0
3
5
7
2
0.1
10
μ
s
100
μ
s
100ms
10ms
1ms
DC operation
1.0 10 100
2 3 57 2 3 57 721000
35 2357
10
3
5
7
7
2
3
5
0252010 155
3
10
0
1
4
IT13104
8
9
5
6
7
2
ID=7.5A
VDS=200V
ID=7.5A
Operation in
this area is
limited by RDS(on).
IDP=30A PW≤10μs
Tc=25°C
Single pulse
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
PD -- Tc
0
020 40 60 80 100 140120
20
80
70
60
100
40
160
IT13106
Note on usage : Since the 2SK4181 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of January, 2008. Specifications and information herein are subject
to change without notice.
