Econo IPM series 1200V / 50A 7 in one-package
7MBP50TEA120
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol Rating Unit
Min. Max.
Bus voltage DC
Surge
Short operating
Collector-Emitter voltage *1
Collector current DC
1ms
DC
Collector power dissipation One transistor *3
Collector current DC
1ms
Forward current diode
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
Input signal current
Alarm signal voltage *6
Alarm signal current *7
Junction temperature
Operating case temperature
Storage temperature
Solder temperature *8
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque Mounting (M5)
VDC
VDC(surge)
VSC
VCES
IC
ICP
-IC
PC
IC
ICP
IF
PC
VCC
Vin
Iin
VALM
IALM
Tj
Topr
Tstg
Tsol
Viso
Item
0
0
400
0
-
-
-
-
-
-
-
-
-0.5
-0.5
-
-0.5
-
-
-20
-40
-
-
-
900
1000
800
1200
50
100
50
287
15
30
15
139
20
Vcc+0.5
3
Vcc
20
150
100
125
260
AC2500
3.5
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
°C
V
N·m
Brake Inverter
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.44=287W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.90=139W [Brake]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.
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7MBP50TEA120 IGBT-IPM
Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Alarm signal hold time
Current limit resistor
Switching Frequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
OFF
Rin=20k ohm
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
Iccp
ICCN
Vin(th)
VZ
tALM
RALM
-
-
1.00
1.25
-
1.1
-
-
1425
-
-
1.35
1.60
8.0
-
2.0
-
1500
15
45
1.70
1.95
-
-
-
4.0
1575
mA
mA
V
V
V
ms
ms
ms
ohm
Protection Section ( Vcc=15V)
Turn-on time
Turn-off time
Reverse recovery time
ton VDC=600V,Tj=125°C
toff IC=50A Fig.1, Fig.6
trr VDC=600V, IF=50A Fig.1, Fig.6
Thermal characteristics( Tc=25°C)
Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance *9
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
- - 0.44
- - 0.86
- - 0.90
- 0.05 -
°C/W
°C/W
°C/W
°C/W
Inverter IGBT
FWD
Brake IGBT
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
VDC
VCC
-
Recommendable value
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IGBT Chip Over Heating
Protection Temperayure Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
VCE=1200V Vin terminal open.
Ic=50A
-Ic=50A
Terminal
Chip
Terminal
Chip
IOC
IOC
tDOC
tSC
TjOH
TjH
VUV
VH
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C Fig.4
Surface of IGBT chips
75 -
23 -
-5-
--8
150 - -
-20 -
11.0 - 12.5
0.2 0.5 -
A
A
µs
µs
°C
°C
V
V
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Common mode rectangular noise
Common mode lightning surge
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
Interval 20s, 10 times
Judge : no over-current, no miss operating
±2.0 - -
±5.0 - -
Item Symbol Condition Min. Typ. Max. Unit
Item Condition Min. Typ. Max. Unit
kV
kV
- - 800 V
13.5 15.0 16.5 V
2.5 - 3.0 Nm
Item Symbol Min. Typ. Max. Unit
Weight
Weight Wt - 270 - g
Inverter
- - 1.0 mA
- - 3.1 V
- 2.2 -
- - 2.0 V
- 1.6 -
- - 1.0 mA
- - 2.6 V
- 1.9 -
- - 3.3 V
- 1.9 -
1.2 - - µs
- - 3.6
- - 0.3
*9 For 1device, Case is under the device
Brake
Terminal
Chip
Terminal
Chip
VCE=1200V Vin terminal open.
Ic=15A
-Ic=15A
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7MBP50TEA120 IGBT-IPM
Figure 1. Switching Time Waveform Definitions
Figure 2. Input/Output Timing Diagram
Figure.4 Definition of tsc
Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit
Figure 6. Switching Characteristics Test Circuit
Ic Ic
IALM
tsc
IALM IALM
Ic
Ic Ic
IALM
tsc
IALM IALM
Ic
/Vin
Vge (Inside IPM )
Faul t (I nside IP M )
/ALM
Gat e Off
on
Gat e On
2ms (typ.)
off
normal
tALMMax. tALM > Max.
off
Faul t : Over-c urrent , Over -heat or Un der- voltage
on
alarm
tALM > 123
/Vin
Vge (Inside IPM )
Faul t (I nside IP M )
/ALM
Gat e Off
on
Gat e On
2ms (typ.)
off
normal
tALMMax. tALM > Max.
off
Faul t : Over-c urrent , Over -heat or Un der- voltage
on
alarm
tALM > 123
On
ton
Vin
Ic
Vin(th)
Vin(th)
50%
toff
10%
trr 90%
90%
On
ton
Vin
Ic
Vin(th)
Vin(th)
50%
toff
10%
trr 90%
90%
Vin
DC
15V
DC
300V
N
+
L
IPM
Ic
P
HCPL-
4504
Vcc
GND N
+
IPM
P
-
20k
Vin
DC
15V
DC
300V
N
+
L
IPM
Ic
P
HCPL-
4504
Vcc
GND N
+
IPM
P
-
20k
AVcc
Vin
GND
Icc P
U
V
W
N
P.G
+8V
fsw
IPM
DC
15V
AVcc
Vin
GND
Icc P
U
V
W
N
P.G
+8V
fsw
IPM
DC
15V
VccU
DC
15V
+
IPM
P
U
V
W
N
20k VinU
GNDU
SW1
Vcc
DC
15V
20k VinX
GND
SW2
Cooling
Fin
Earth
AC200V
4700p Noise
CT
VccU
DC
15V
+
IPM
P
U
V
W
N
20k VinU
GNDU
SW1
Vcc
DC
15V
20k VinX
GND
SW2
Cooling
Fin
Earth
AC200V
4700p Noise
CT
AC400V
600V
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7MBP50TEA120 IGBT-IPM
Block diagram
Outline drawings, mm
Mass : 270g
U
V
W
Vcc
VinX
GND
VinY
VinZ
ALM
B
N
VinDB
VccW
ALMW
GNDW
VccV
ALMV
GNDV
P
VccU
ALMU
GNDU
VinU
VinV
VinW
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Vz
RALM1.5k
RALM1.5k Vz
RALM1.5k Vz
Vz
Vz
Vz
Vz
RALM1.5k
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
4
3
2
1
8
6
5
7
12
11
10
9
14
16
13
17
18
15
19
U
V
W
Vcc
VinX
GND
VinY
VinZ
ALM
B
N
VinDB
VccW
ALMW
GNDW
VccV
ALMV
GNDV
P
VccU
ALMU
GNDU
VinU
VinV
VinW
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Vz
RALM1.5k
RALM1.5k Vz
RALM1.5k Vz
Vz
Vz
Vz
Vz
RALM1.5k
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
Pre-DriverPre-Driver
44
3
2
1
8
6
5
7
12
11
10
9
14
16
13
17
18
15
19
Pre-drivers include following functions
1.Amplifier for driver
2.Short circuit protection
3.Under voltage lockout circuit
4.Over current protection
5.IGBT chip over heating protection
MB CF M
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IGBT-IPM
Characteristics
Control circuit characteristics (Representative)
7MBP50TEA120
0
0.5
1
1.5
2
2.5
12 13 14 15 16 17 18
Input signal threshold voltage
vs. Power supply voltage (typ.)
Input signal threshold voltage
: Vin(on),Vin(off) (V)
Power supply voltage : Vcc (V)
Tj=25°C
Tj=125°C
} Vin (on)
} Vin (off)
0
10
20
30
40
50
0 5 10 15 20 25
Power supply current vs. Switching fr equency
Tc=125°C (typ.)
N-side
P-side
Power s u p ply cu rr ent : Ic c (m A )
Switching frequency : fsw (kHz)
Vcc=13V
Vcc=13V
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
0
2
4
6
8
10
12
14
20 40 60 80 100 120 140
Under volt age vs. Junction t emperature (ty p.)
Under voltage : VUVT (V)
Junc tion temperatu re : Tj ( ° C)
0
0.2
0.4
0.6
0.8
1
20 40 60 80 100 120 140
U nder volt age hys ter is is vs . Jnc t ion temp er a t ure (t yp. )
Un d e r volta g e hys terisis : VH (V )
Junc tion temperature : Tj ( ° C)
0
0.5
1
1.5
2
2.5
3
12 13 14 15 16 17 18
Al arm hold tim e v s. P ower supply volt age (typ. )
Alarm hold time : tALM (mSec)
Power supply voltage : Vcc (V)
Tc=100°C
Tc=25°C
0
50
100
150
200
12 13 14 15 16 17 18
Over heating characteristics
TjOH,TjH vs. Vcc (typ.)
Over heating protection : TjOH (°C)
O H hy sterisis : TjH (° C)
Pow er supp ly voltage : Vcc (V)
TjOH
TjH
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7MBP50TEA120 IGBT-IPM
Main circuit characteristics (Representative)
0
20
40
60
80
100
00.511.522.533.5
Collect or cur r ent vs. Collect or-Emitt er voltage ( typ.)
Tj =25° C / Chip
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
C o l le c to r - E m i tt e r v oltag e : Vc e (V)
0
20
40
60
80
100
00.511.522.533.5
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25° C / Term inal
Vcc=13V
Vcc=15V
Vcc=17V
Colle c tor Cu rre n t : Ic (A)
C o l le c to r - E m i tt e r v oltag e : Vc e (V)
0
20
40
60
80
100
00.511.522.533.5
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C / Chip
Vcc=13V
Vcc=15V
Vcc=17V
Colle ctor Current : Ic (A)
Colle ctor-Emitter volt age : Vce (V)
0
20
40
60
80
100
00.511.522.533.5
Collect or cur r ent vs. Collect or-Emitt er voltage ( typ.)
Tj=125°C / Terminal
Vcc=13V
Vcc=15V
Vcc=17V
Colle ctor Current : Ic (A)
C o l le c to r - E m i tt e r v oltag e : Vc e (V)
0
20
40
60
80
100
0 0.5 1 1.5 2 2.5
Forward current vs. Forward voltage (t y p.)
Chip
125°C
25°C
Forward Current : If (A)
Forward voltage : Vf (V)
0
20
40
60
80
100
0 0.5 1 1.5 2 2.5
Forward current v s. Forward v ol t age (typ. )
Terminal
125°C
25°C
Forward Current : If (A)
Forward voltage : Vf (V)
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7MBP50TEA120 IGBT-IPM
0
5
10
15
20
0 20406080100
Swit ching Loss v s. Coll ec tor Current (typ. )
Edc=600V,Vcc=15V,Tj=125°C
Eon
Eoff
Err
Switching loss : Eon,Eoff,Err (mJ/cy cl e )
Colle ctor c urrent : Ic (A)
0
100
200
300
400
500
0 20406080100120140160
Power derating for IGB T (max.)
(per dev ice)
C o llect er Powe r Dis sip ation : Pc ( W)
Cas e Temperature : Tc (°C)
0
50
100
150
200
0 20406080100120140160
Power derating for F W D ( max.)
(per dev ice)
Collecter Power Dissipation : Pc (W )
Cas e T emperature : Tc (°C )
0
100
200
300
400
500
600
700
0 200 400 600 800 1000 1200 1400
Revers ed biased safe operating area
Vc c =1 5 V, Tj<=1 25 °C (m in.)
Co lle cto r current : Ic (A)
Collector-Emitter voltage : Vce (V)
SCSOA
(non-re p etitive pulse )
RBSOA
(Repe titive pulse) 0.01
0.1
1
0.001 0.01 0.1 1
Transient thermal resistance (max.)
Therm al resistance : Rth(j-c) (°C/W )
Pulse width :Pw (sec)
FWD
IGBT
0
5
10
15
20
0 20406080100
S witchin g Loss v s. C ollec tor C urrent (ty p.)
Edc=600V,Vcc=15V,Tj=25°C
Eon
Eoff
Err
Switch ing los s : Eon,Eoff,Err (mJ /cyc le)
C ollector c urrent : Ic (A )
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7MBP50TEA120 IGBT-IPM
1
10
100
0 1020304050607080
Reverse rec overy c haracter isti c s
trr,Irr vs.IF (typ.)
Re vers e re cover y current :Irr (A)
Reverse recovery time:trr(nsec)
Forward current:IF(A)
trr125°C
trr25°C
Irr125°C
Irr25°C
10
100
1000
10000
0 1020304050607080
S w it ch ing ti m e v s. C oll ec tor cu rren t ( typ .)
Edc=600V,Vcc=15V,Tj=25°C
Sw itching time : ton,toff,tf (nSec )
Collector current : Ic (A)
toff
ton
tf
10
100
1000
10000
0 1020304050607080
Switching tim e vs. Collector current (typ.)
Edc=600V,Vcc=15V,Tj=125°C
Sw itching time : ton,toff,tf (nSec )
Collector current : Ic (A)
toff
ton
tf
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7MBP50TEA120 IGBT-IPM
Characteristics
Dynamic Brake Characteristics (Representative)
0
10
20
30
40
00.511.522.533.54
Collector current v s. Collector-Em itt er v oltage (typ.)
Tj=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Curr ent : Ic ( A )
C ollecto r- E m it ter v oltag e : V c e ( V )
0
10
20
30
40
00.511.522.533.54
Collector current v s. Collector-Emitter v oltage (typ.)
Tj=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
C ollector-Em itter voltag e : Vc e (V )
0
50
100
150
200
0 20406080100120140160
Power derating for IG BT ( max. )
(per dev ice)
C o llect er Powe r Dis sip ation : Pc ( W)
Case Temperature : Tc (°C)
0.01
0.1
1
0.001 0.01 0.1 1
Transient thermal resistance (max.)
Therm al resistance : Rth(j-c) (°C/W )
Pulse width :Pw (sec)
IGBT
0
30
60
90
120
150
180
210
0 200 400 600 800 1000 1200 1400
Reversed biased safe operating area
Vc c =1 5 V, Tj<= 1 25 °C (m in .)
C ollector curre nt : Ic (A)
Collector-Emitte r voltage : Vce (V)
SCSOA
(non-repetitive pulse)
RBSOA
(Repetiti ve p u lse)
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