NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 1
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Based on DDR3-1066/1333 128Mx16 (1GB) / 256Mx8 (2GB/4GB) SDRAM B-Die
Features
•Performance:
Speed Sort
PC3-8500
PC3-10600
Unit
-BE
-CG
DIMM CAS Latency
7
9
fck – Clock Freqency
533
667
MHz
tck – Clock Cycle
1.875
1.5
ns
fDQ – DQ Burst Freqency
1066
1333
Mbps
• 240-Pin Dual In-Line Memory Module (UDIMM)
• 128Mx64 (1GB) / 256Mx64 (2GB) / 512Mx64 (4GB) DDR3
Unbuffered DIMM based on 256Mx8 DDR3 SDRAM B-Die
devices.
• Intended for 533MHz/667MHz applications
• Inputs and outputs are SSTL-15 compatible
• VDD = VDDQ = 1.5V ±0.075V
• SDRAMs have 8 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions.
• Address and control signals are fully synchronous to positive
clock edge
• Nominal and Dynamtic On-Die Termination support
• Halogen free product
• Programmable Operation:
- DIMM Latency: 6,7,8,9
- Burst Type: Sequential or Interleave
- Burst Length: BC4, BL8
- Operation: Burst Read and Write
• Two different termination values (Rtt_Nom & Rtt_WR)
• 14/10/1 (row/column/rank) Addressing for 1GB
• 14/10/1 (row/column/rank) Addressing for 2GB
• 15/10/2 (row/column/rank) Addressing for 4GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
•1GB: SDRAMs are in 96-ball BGA Package
• 2GB: SDRAMs are in 78-ball BGA Package
• 4GB: SDRAMs are in 78-ball BGA Package
• RoHS compliance and Halogen free
Description
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GC64B8HB0NF are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered
Dual In-Line Memory Module (UDIMM), organized as one rank of 128Mx64 (1GB) / 256Mx64 (2GB) and two ranks of 512Mx64 (4GB)
high-speed memory array. Modules use four 128Mx16 (1GB) 96-ball BGA packaged devices and eight 256Mx8 (2GB) 78-ball BGA
packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices . These DIMMs are manufactured using raw cards developed
for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All
NANYA DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating of 533MHz/667MHz clock speeds and achieves high-speed data transfer rates of
1066Mbps/1333Mbps. Prior to any access operation, the device latency and burst/length/operation type must be programmed into the
DIMM by address inputs A0-A13 (1GB/2GB) / A0-A14 (4GB) and I/O inputs BA0~BA2 using the mode register set cycle.
The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data
are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 2
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Ordering Information
Part Number
Speed
Organization
Power
Leads
Note
NT1GC64BH4B0NF-BE
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 7)
128Mx64
1.5V
Gold
NT1GC64BH4B0NF-CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
NT2GC64B88B0NF-BE
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 7)
256Mx64
NT2GC64B88B0NF- CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
NT4GC64B8HB0NF-BF
DDR3-1066
PC3-8500
533MHz (1.875ns @ CL = 8)
512Mx64
NT4GC64B8HB0NF -CG
DDR3-1333
PC3-10600
667MHz (1.5ns @ CL = 9)
Pin Description
Pin Name
Description
Pin Name
Description
CK0, CK1
Clock Inputs, positive line
DQ0-DQ63
Data input/output
,
Clock Inputs, negative line
DQS0-DQS8
Data strobes
CKE0, CKE1
Clock Enable
-
Data strobes complement
Row Address Strobe
DM0-DM8
Data Masks
Column Address Strobe
Temperature event pin
Write Enable
Reset pin
,
Chip Selects
VREFDQ , VREFCA
Input/Output Reference
A0-A9, A11, A13-A15
Address Inputs
VDDSPD
SPD and Temp sensor power
A10/AP
Address Input/Auto-Precharge
SA0, SA1
Serial Presence Detect Address Inputs
A12/
Address Input/Burst Chop
Vtt
Termination voltage
BA0-BA2
SDRAM Bank Address Inputs
VSS
Ground
ODT0, ODT1
Active termination control lines
VDD
Core and I/O power
SCL
Serial Presence Detect Clock Input
NC
No Connect
SDA
Serial Presence Detect Data input/output
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 3
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DDR3 SDRAM Pin Assignment
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
Pin
Front
Pin
Back
1
VREFDQ
121
VSS
31
DQ25
151
VSS
61
A2
181
A1
91
DQ41
211
VSS
2
VSS
122
DQ4
32
VSS
152
DM3,DQS12,T
DQS12
62
VDD
182
VDD
92
VSS
212
DM5,
DQS14,
TDQS14
3
DQ0
123
DQ5
33
153
NC,
63
CK1,NC
183
VDD
93
213
NC,
,
4
DQ1
124
VSS
34
DQS3
154
VSS
64
,NC
184
CK0
94
DQS5
214
VSS
5
VSS
125
DM0,DQS9,
TDQS9
35
VSS
155
DQ30
65
VDD
185
95
VSS
215
DQ46
6
126
NC,
36
DQ26
156
DQ31
66
VDD
186
VDD
96
DQ42
216
DQ47
7
DQS0
127
VSS
37
DQ27
157
VSS
67
VREFCA
187
,
NC
97
DQ43
217
VSS
8
VSS
128
DQ6
38
VSS
158
CB4,NC
68
PAR_IN,
NC
188
A0
98
VSS
218
DQ52
9
DQ2
129
DQ7
39
CB0,NC
159
CB5,NC
69
VDD
189
VDD
99
DQ48
219
DQ53
10
DQ3
130
VSS
40
CB1,NC
160
VSS
70
A10/AP
190
BA1
100
DQ49
220
VSS
11
VSS
131
DQ12
41
VSS
161
DM8,DQS17,
TDQS17,NC
71
BA0
191
VDD
101
VSS
221
DM6,
DQS15,
TDQS15
12
DQ8
132
DQ13
42
162
NC,,
,
72
VDD
192
102
222
NC,
,
13
DQ9
133
VSS
43
DQS8
163
VSS
73
193
103
DQS6
223
VSS
14
VSS
134
DM1, DQS10,
TDQS10
44
VSS
164
CB6,NC
74
194
VDD
104
VSS
224
DQ54
15
135
NC,
45
CB2,NC
165
CB7,NC
75
VDD
195
ODT0
105
DQ50
225
DQ55
16
DQS1
136
VSS
46
CB3,NC
166
VSS
76
,NC
196
A13
106
DQ51
226
VSS
17
VSS
137
DQ14
47
VSS
167
NC(TEST)
77
ODT1,NC
197
VDD
107
VSS
227
DQ60
18
DQ10
138
DQ15
48
VTT,NC
168
78
VDD
198
,NC
108
DQ56
228
DQ61
19
DQ11
139
VSS
49
VTT,NC
169
CKE1/NC
79
,NC
199
VSS
109
DQ57
229
VSS
20
VSS
140
DQ20
50
CKE0
170
VDD
80
VSS
200
DQ36
110
VSS
230
DM7,
DQS16,
TDQS16
21
DQ16
141
DQ21
51
VDD
171
A15,NC
81
DQ32
201
DQ37
111
231
NC,
,
22
DQ17
142
VSS
52
BA2
172
A14
82
DQ33
202
VSS
112
DQS7
232
VSS
23
VSS
143
DM2, DQS11,
TDQS11
53
ERR_OUT
,NC
173
VDD
83
VSS
203
DM4,
DQS13,
TDQS13
113
VSS
233
DQ62
24
144
NC,
54
VDD
174
A12/
84
204
NC,
,
114
DQ58
234
DQ63
25
DQS2
145
VSS
55
A11
175
A9
85
DQS4
205
VSS
115
DQ59
235
VSS
26
VSS
146
DQ22
56
A7
176
VDD
86
VSS
206
DQ38
116
VSS
236
VDDSPD
27
DQ18
147
DQ23
57
VDD
177
A8
87
DQ34
207
DQ39
117
SA0
237
SA1
28
DQ19
148
VSS
58
A5
178
A6
88
DQ35
208
VSS
118
SCL
238
SDA
29
VSS
149
DQ28
59
A4
179
VDD
89
VSS
209
DQ44
119
SA2
239
VSS
30
DQ24
150
DQ29
60
VDD
180
A3
90
DQ40
210
DQ45
120
VTT
240
VTT
Note: CK1, , CKE1, and ODT1 are for 4GB modules only.
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 4
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Input/Output Functional Description
Symbol
Type
Polarity
Function
CK0, CK1
,
Input
Cross
point
The system clock inputs. All address and command lines are sampled on the cross point of the
rising edge of CK and falling edge of . A Delay Locked Loop (DLL) circuit is driven from the
clock inputs and output timing for read operations is synchronized to the input clock.
CKE0, CKE1
Input
Active
High
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when low. By
deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.
,
Input
Active
Low
Enables the associated DDR3 SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored but
previous operations continue, Rank 0 is selected by ; Rank 1 is selected by
, ,
Input
Active
Low
When sampled at the positive rising edge of CK and falling edge of , signals , ,
define the operation to be executed by the SDRAM.
ODT0, ODT1
Input
Active
High
Asserts on-die termination for DQ, DM, DQS, and signals if enabled via the DDR3 SDRAM
mode register.
DM0 – DM8
Input
Active
High
The data write masks, associated with one data byte. In Write mode, DM operates as a byte mask
by allowing input data to be written if it is low but blocks the write operation if it is high. In Read
mode, DM lines have no effect.
DQS0 – DQS8
–
I/O
Cross
point
The data strobes, associated with one data byte, sourced with data transfers. In Write mode, the
data strobe is sourced by the controller and is centered in the data window. In Read mode, the
data strobe is sourced by the DDR3 SDRAM and is sent at the leading edge of the data window.
signals are complements, and timing is relative to the cross point of respective DQS and
. If the module is to be operated in single ended strobe mode, all signals must be tied on
the system board to VSS and DDR3 SDRAM mode registers programmed appropriately.
BA0, BA1, BA2
Input
-
Selects which DDR3 SDRAM internal bank of four or eight is activated.
A0 – A9
A10/AP
A11
A12/
A13-A15
Input
-
During a Bank Activate command cycle, defines the row address when sampled at the cross point
of the rising edge of CK and falling edge of . During a Read or Write command cycle, defines
the column address when sampled at the cross point of the rising edge of CK and falling edge of
. In addition to the column address, AP is used to invoke autoprecharge operation at the end of
the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines the
bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command
cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is
high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then
BA0-BAn are used to define which bank to precharge.
DQ0 – DQ63
Input
-
Data Input/Output pins.
VDD, VDDSPD, VSS
Supply
-
Power supplies for core, I/O, Serial Presence Detect, Temp sensor, and ground for the module.
VREFDQ, VREFCA
Supply
-
Reference voltage for SSTL15 inputs
SDA
I/O
-
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM and temp sensor.
A resistor must be connected from the SDA bus line to VDDSPD on the system planar to act as a pull
up.
SCL
Input
-
This signal is used to clock data into and out of the SPD EEPROM and Temp sensor.
SA0 – SA2
Input
-
Address pins used to select the Serial Presence Detect and Temp sensor base address.
Output
-
The pin is reserved for use to flag critical module temperature.
Input
-
This signal resets the DDR3 SDRAM
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 5
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram
[1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
DQ0
DQ1
DQ2
DQ7
DQ4
DQ6
DQ5
DQ3
I/O 0
D0
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DQS/ODT/DM/CKE/S relationships must be maintained as shown.
3. For each DRAM, a unique ZQ resistor is connected to ground. The ZQ
resistor is 240Ω±1%.
4. One SPD exists per module.
ZQ
VDDSPD
VSS
VREFDQ
VREFCA
VDD/VDDQ
SPD
D0-D7
D0-D7
D0-D7
BA0-BA2 D0-D7
BA0-BA2: SDRAMs D0-D7
A0-A13
CKE0
ODT0
A0-A13: SDRAMs D0-D7
: SDRAMs D0-D7
: SDRAMs D0-D7
ODT: SDRAMs D0-D7
: SDRAMs D0-D7
CKE: SDRAMs D0-D7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM0
DQS0
DQ8
DQ9
DQ10
DQ15
DQ12
DQ14
DQ13
DQ11
I/O 0
D1
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM1
DQS1
DQ16
DQ17
DQ18
DQ23
DQ20
DQ22
DQ21
DQ19
I/O 0
D2
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM2
DQS2
DQ24
DQ25
DQ26
DQ31
DQ28
DQ30
DQ29
DQ27
I/O 0
D3
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM3
DQS3
CK0 CK: SDRAMs D0-D7
: SDRAMs D0-D7
: SDRAMs D0-D7
DDR3
SDRAM
VTT
CKE0, A[13:0],
, , ,
ODT0, BA[2:0],
DDR3
SDRAM
VDD
CK
SPD
SCL
WP
SCL
SDA
SA0
SA1 A0
A1
A2
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 6
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram
[2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
DQ0
DQ1
DQ2
DQ7
DQ4
DQ6
DQ5
DQ3
I/O 0
D0
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DQS/ODT/DM/CKE/S relationships must be maintained as shown.
3. For each DRAM, a unique ZQ resistor is connected to ground. The ZQ
resistor is 240Ω±1%.
4. One SPD exists per module.
ZQ
VDDSPD
VSS
VREFDQ
VREFCA
VDD/VDDQ
SPD
D0-D7
D0-D7
D0-D7
BA0-BA2 D0-D7
BA0-BA2: SDRAMs D0-D7
A0-A13
CKE0
ODT0
A0-A13: SDRAMs D0-D7
: SDRAMs D0-D7
: SDRAMs D0-D7
ODT: SDRAMs D0-D7
: SDRAMs D0-D7
CKE: SDRAMs D0-D7
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DQ32
DQ33
DQ34
DQ39
DQ36
DQ38
DQ37
DQ35
I/O 0
D4
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM0
DQS0
DM4
DQS4
DQ8
DQ9
DQ10
DQ15
DQ12
DQ14
DQ13
DQ11
I/O 0
D1
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM1
DQS1
DQ40
DQ41
DQ42
DQ47
DQ44
DQ46
DQ45
DQ43
I/O 0
D5
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM5
DQS5
DQ16
DQ17
DQ18
DQ23
DQ20
DQ22
DQ21
DQ19
I/O 0
D2
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM2
DQS2
DQ48
DQ49
DQ50
DQ55
DQ52
DQ54
DQ53
DQ51
I/O 0
D6
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM6
DQS6
DQ24
DQ25
DQ26
DQ31
DQ28
DQ30
DQ29
DQ27
I/O 0
D3
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM3
DQS3
DQ56
DQ57
DQ58
DQ63
DQ60
DQ62
DQ61
DQ59
I/O 0
D7
ZQ
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DM DQS
DM7
DQS7
CK0 CK: SDRAMs D0-D7
: SDRAMs D0-D7
: SDRAMs D0-D7
DDR3
SDRAM
VTT
CKE0, A[13:0],
, , ,
ODT0, BA[2:0],
DDR3
SDRAM
VDD
CK
SPD
SCL
WP
SCL
SDA
SA0
SA1 A0
A1
A2
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 7
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Functional Block Diagram
[4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
DM1
DQ8
DQ9
DQ10
DQ15
DQ12
DQ14
DQ13
DQ11
DQ16
DQ17
DQ18
DQ23
DQ20
DQ22
DQ21
DQ19
DM2
DQ24
DQ25
DQ26
DQ31
DQ28
DQ30
DQ29
DQ27
DM3
DM0
DQ0
DQ1
DQ2
DQ7
DQ4
DQ6
DQ5
DQ3
DM5
DQS5
DQ40
DQ41
DQ42
DQ47
DQ44
DQ46
DQ45
DQ43 D5
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
DM6
DQS6
DQS6
DQ48
DQ49
DQ50
DQ55
DQ52
DQ54
DQ53
DQ51 D6
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
DM7
DQ56
DQ57
DQ58
DQ63
DQ60
DQ62
DQ61
DQ59 D7
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
DQS4
DQ32
DQ33
DQ34
DQ39
DQ36
DQ38
DQ37
DQ35 D4
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
DM4
D1
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D2
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D3
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
CS DQSDQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D9
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D10
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D11
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D8
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D13
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D14
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D15
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
D12
DQS
I/O 0
I/O 1
I/O 6
I/O 5
I/O 4
I/O 3
I/O 2
I/O 7
DM
DQS0
DQS1
DQS2
DQS3
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
CS DQS
DQS7
ZQ ZQ ZQ ZQ
ZQ ZQ ZQ ZQ
ZQ ZQ ZQ ZQ
ZQZQ
ZQ
ZQ
DDR3
SDRAM
VTT
CKE[1:0], A[13:0],
, , ,
ODT[1:0], BA[2:0],
[1:0]
DDR3
SDRAM
VDD
CK
VDDSPD
VSS
VREFDQ
VREFCA
VDD/VDDQ
SPD
D0-D15
D0-D15
D0-D15
BA0-BA2 D0-D15
BA0-BA2: SDRAMs D0-D15
A0-A13
CKE0
ODT0
A0-A13: SDRAMs D0-D15
: SDRAMs D0-D15
: SDRAMs D0-D15
ODT: SDRAMs D0-D7
: SDRAMs D0-D15
CKE: SDRAMs D0-D7
CK0 CK: SDRAMs D0-D7
: SDRAMs D0-D7
: SDRAMs D8-D15
Notes :
1. DQ-to-I/O wiring is shown as recommended but may be changed.
2. DQ/DQS/DQS/ODT/DM/CKE/S relationships must be maintained as shown.
3. For each DRAM, a unique ZQ resistor is connected to ground. The ZQ
resistor is 240Ω±1%.
4. One SPD exists per module.
SPD
SCL
WP
SCL
SDA
SA0
SA1 A0
A1
A2
D0
CKE1 CKE: SDRAMs D8-D15
ODT1 ODT: SDRAMs D8-D15
CK1 CK: SDRAMs D8-D15
: SDRAMs D8-D15
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 8
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
-BE -CG -BE -CG
0 CRC range, EEPROM bytes, bytes used
CRC Covers Bytes: 0~116,
Total SPD Bytes: 256,
SPD Bytes Used: 176,
CRC Covers Bytes: 0~116,
Total SPD Bytes: 256,
SPD Bytes Used: 176,
-- --
1 SPD revision Revision 1.0 Revision 1.0 -- --
2 DRAM device type DDR3 SDRAM DDR3 SDRAM -- --
3 Module type (form factor) UDIMM UDIMM -- --
4 SDRAM Device density and banks 8 banks, 2Gb 8 banks, 2Gb -- --
5 SDRAM device row and column count 14 rows, 10 columns 14 rows, 10 columns -- --
6 Module minimum nominal voltage 1.5 V 1.5 V -- --
7 Module ranks and device DQ count 1 rank, 16 bits 1 rank, 16 bits -- --
8 ECC tag and module memory Bus width Non ECC, 64bits Non ECC, 64bits -- --
9 Fine timebase dividend/divisor (in ps) 2.5ps 2.5ps -- --
10 Medium timebase dividend 1ns 1ns -- --
11 Medium timebase divisor 8ns 8ns -- --
12 Minimum SDRAM cycle time (tCKmin) 1.875ns 1.5ns -- --
13 Reserved Undefined Undefined -- --
14 CAS latencies supported 6,7,8 6,7,8,9 -- --
15 CAS latencies supported Undefined Undefined -- --
16 Minimum CAS latency time (tAAmin) 13.125ns 13.125ns -- --
17 Minimum write recovery time (tWRmin) 15ns 15ns -- --
18 Minimum -to- delay (tRCDmin) 13.125ns 13.125ns -- --
19 Minimum Row Active to Row Active delay (tRRDmin) 7.5ns 6ns -- --
20 Minimum row Precharge delay (tRPmin) 13.125ns 13.125ns -- --
21 Upper nibble for tRAS and tRC 1,1 1,1 -- --
22 Minimum Active-to-Precharge delay (tRASmin) 37.5ns 36ns -- --
23 Minimum Active-to-Active/Refresh delay (tRCmin) 50.625ns 49.125ns -- --
24 Minimum refresh recovery delay (tRFCmin) LSB (Combo bytes 24,25) (Combo bytes 24,25) -- --
25 Minimum refresh recovery delay (tRFCmin) MSB 110ns 110ns -- --
26 Minimum internal Write-to-Read command delay (tWTRmin) 7.5ns 7.5ns -- --
27
Minimum internal Read-to-Precharge command delay
(tRTPmin)
7.5ns 7.5ns -- --
28 Minimum four active window delay (tFAWmin) LSB (Combo byte 28, 29) (Combo byte 28, 29) -- --
29 Minimum four active window delay (tFAWmin) MSB 37.5ns 30ns -- --
30 SDRAM device output drivers suported
RZQ / 6,
RZQ / 7,
DLL-Off Mode Support,
RZQ / 6,
RZQ / 7,
DLL-Off Mode Support,
-- --
31 SDRAM device thermal and refresh options
Extended Temperature Range,
ASR,
ODTS,
PASR,
Extended Temperature Range,
ASR,
ODTS,
PASR,
-- --
32 Module Thermal Sensor Non Thermal Sensor Support Non Thermal Sensor Support -- --
33 SDRAM Device Type Standard Monolithic Device Standard Monolithic Device -- --
34-59 Reserved Undefined Undefined -- --
60 Module height (nominal) 29 ＜ height ≦ 30 mm 29 ＜ height ≦ 30 mm -- --
61 Module thickness (Max)
Back: 1 < thickness ≤ 2 mm,
Front: 1 < thickness ≤ 2 mm,
Back: 1 < thickness ≤ 2 mm,
Front: 1 < thickness ≤ 2 mm,
-- --
62 Raw Card ID reference Raw Card A Raw Card A -- --
63 DRAM address mapping edge connector Undefined Undefined -- --
64-116 Reserved Undefined Undefined -- --
117-118 Module manufacture ID Nanya Technology Nanya Technology -- --
119-121 Module manufacturer Information Undefined Undefined -- --
126-127 CRC Calculated Value Calculated Value -- --
Serial Presence Detect (Part 1 of 2) [NT1GC64BH4B0NF, 1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
Byte
Description
SPD Entry Value
Serial PD Data Entry (Hex.)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 9
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
-BE -CG -BE -CG
128-145 Module part number ASCII values ASCII values -- --
146 Module die revision Undefined Undefined -- --
147 Module PCB revision Undefined Undefined -- --
148-149 DRAM device manufacturer ID Nanya Technology Nanya Technology -- --
150-175 Manufacturer reserved Undefined Undefined -- --
176-255 Customer reserved Undefined Undefined -- --
Serial Presence Detect (Part 2 of 2) [NT1GC64BH4B0NF, 1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
Byte
Description
SPD Entry Value
Serial PD Data Entry (Hex.)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 10
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
-BE -CG -BE -CG
0 CRC range, EEPROM bytes, bytes used
CRC Covers Bytes: 0~116,
Total SPD Bytes: 256,
SPD Bytes Used: 176,
CRC Covers Bytes: 0~116,
Total SPD Bytes: 256,
SPD Bytes Used: 176,
-- --
1 SPD revision Revision 1.0 Revision 1.0 -- --
2 DRAM device type DDR3 SDRAM DDR3 SDRAM -- --
3 Module type (form factor) UDIMM UDIMM -- --
4 SDRAM Device density and banks 8 banks, 2Gb 8 banks, 2Gb -- --
5 SDRAM device row and column count 14 rows, 10 columns 14 rows, 10 columns -- --
6 Module minimum nominal voltage 1.5 V 1.5 V -- --
7 Module ranks and device DQ count 1 rank, 8 bits 1 rank, 8 bits -- --
8 ECC tag and module memory Bus width Non ECC, 64bits Non ECC, 64bits -- --
9 Fine timebase dividend/divisor (in ps) 2.5ps 2.5ps -- --
10 Medium timebase dividend 1ns 1ns -- --
11 Medium timebase divisor 8ns 8ns -- --
12 Minimum SDRAM cycle time (tCKmin) 1.875ns 1.5ns -- --
13 Reserved Undefined Undefined -- --
14 CAS latencies supported 6,7,8 6,7,8,9 -- --
15 CAS latencies supported Undefined Undefined -- --
16 Minimum CAS latency time (tAAmin) 13.125ns 13.125ns -- --
17 Minimum write recovery time (tWRmin) 15ns 15ns -- --
18 Minimum -to- delay (tRCDmin) 13.125ns 13.125ns -- --
19 Minimum Row Active to Row Active delay (tRRDmin) 7.5ns 6ns -- --
20 Minimum row Precharge delay (tRPmin) 13.125ns 13.125ns -- --
21 Upper nibble for tRAS and tRC 1,1 1,1 -- --
22 Minimum Active-to-Precharge delay (tRASmin) 37.5ns 36ns -- --
23 Minimum Active-to-Active/Refresh delay (tRCmin) 50.625ns 49.125ns -- --
24 Minimum refresh recovery delay (tRFCmin) LSB (Combo bytes 24,25) (Combo bytes 24,25) -- --
25 Minimum refresh recovery delay (tRFCmin) MSB 110ns 110ns -- --
26 Minimum internal Write-to-Read command delay (tWTRmin) 7.5ns 7.5ns -- --
27
Minimum internal Read-to-Precharge command delay
(tRTPmin)
7.5ns 7.5ns -- --
28 Minimum four active window delay (tFAWmin) LSB (Combo byte 28, 29) (Combo byte 28, 29) -- --
29 Minimum four active window delay (tFAWmin) MSB 37.5ns 30ns -- --
30 SDRAM device output drivers suported
RZQ / 6,
RZQ / 7,
DLL-Off Mode Support,
RZQ / 6,
RZQ / 7,
DLL-Off Mode Support,
-- --
31 SDRAM device thermal and refresh options
Extended Temperature Range,
ASR,
ODTS,
PASR,
Extended Temperature Range,
ASR,
ODTS,
PASR,
-- --
32 Module Thermal Sensor Non Thermal Sensor Support Non Thermal Sensor Support -- --
33 SDRAM Device Type Standard Monolithic Device Standard Monolithic Device -- --
34-59 Reserved Undefined Undefined -- --
60 Module height (nominal) 29 ＜ height ≦ 30 mm 29 ＜ height ≦ 30 mm -- --
61 Module thickness (Max)
Back: 1 < thickness ≤ 2 mm,
Front: 1 < thickness ≤ 2 mm,
Back: 1 < thickness ≤ 2 mm,
Front: 1 < thickness ≤ 2 mm,
-- --
62 Raw Card ID reference Raw Card B Raw Card B -- --
63 DRAM address mapping edge connector Undefined Undefined -- --
64-116 Reserved Undefined Undefined -- --
117-118 Module manufacture ID Nanya Technology Nanya Technology -- --
119-121 Module manufacturer Information Undefined Undefined -- --
126-127 CRC Calculated Value Calculated Value -- --
Serial Presence Detect (Part 1 of 2) [NT2GC64B88B0NF, 2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Byte
Description
SPD Entry Value
Serial PD Data Entry (Hex.)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 11
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
-BE -CG -BE -CG
128-145 Module part number ASCII values ASCII values -- --
146 Module die revision Undefined Undefined -- --
147 Module PCB revision Undefined Undefined -- --
148-149 DRAM device manufacturer ID Nanya Technology Nanya Technology -- --
150-175 Manufacturer reserved Undefined Undefined -- --
176-255 Customer reserved Undefined Undefined -- --
Serial Presence Detect (Part 2 of 2) [NT2GC64B88B0NF, 2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Byte
Description
SPD Entry Value
Serial PD Data Entry (Hex.)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 12
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
-BE -CG -BE -CG
0 CRC range, EEPROM bytes, bytes used
CRC Covers Bytes: 0~116,
Total SPD Bytes: 256,
SPD Bytes Used: 176,
CRC Covers Bytes: 0~116,
Total SPD Bytes: 256,
SPD Bytes Used: 176,
-- --
1 SPD revision Revision 1.0 Revision 1.0 -- --
2 DRAM device type DDR3 SDRAM DDR3 SDRAM -- --
3 Module type (form factor) UDIMM UDIMM -- --
4 SDRAM Device density and banks 8 banks, 2Gb 8 banks, 2Gb -- --
5 SDRAM device row and column count 15 rows, 10 columns 15 rows, 10 columns -- --
6 Module minimum nominal voltage 1.5 V 1.5 V -- --
7 Module ranks and device DQ count 2 ranks, 8 bits 2 ranks, 8 bits -- --
8 ECC tag and module memory Bus width Non ECC, 64bits Non ECC, 64bits -- --
9 Fine timebase dividend/divisor (in ps) 2.5ps 2.5ps -- --
10 Medium timebase dividend 1ns 1ns -- --
11 Medium timebase divisor 8ns 8ns -- --
12 Minimum SDRAM cycle time (tCKmin) 1.875ns 1.5ns -- --
13 Reserved Undefined Undefined -- --
14 CAS latencies supported 6,7,8 6,7,8,9 -- --
15 CAS latencies supported Undefined Undefined -- --
16 Minimum CAS latency time (tAAmin) 13.125ns 13.125ns -- --
17 Minimum write recovery time (tWRmin) 15ns 15ns -- --
18 Minimum -to- delay (tRCDmin) 13.125ns 13.125ns -- --
19 Minimum Row Active to Row Active delay (tRRDmin) 7.5ns 6ns -- --
20 Minimum row Precharge delay (tRPmin) 13.125ns 13.125ns -- --
21 Upper nibble for tRAS and tRC 1,1 1,1 -- --
22 Minimum Active-to-Precharge delay (tRASmin) 37.5ns 36ns -- --
23 Minimum Active-to-Active/Refresh delay (tRCmin) 50.625ns 49.125ns -- --
24 Minimum refresh recovery delay (tRFCmin) LSB (Combo bytes 24,25) (Combo bytes 24,25) -- --
25 Minimum refresh recovery delay (tRFCmin) MSB 110ns 110ns -- --
26 Minimum internal Write-to-Read command delay (tWTRmin) 7.5ns 7.5ns -- --
27
Minimum internal Read-to-Precharge command delay
(tRTPmin)
7.5ns 7.5ns -- --
28 Minimum four active window delay (tFAWmin) LSB (Combo byte 28, 29) (Combo byte 28, 29) -- --
29 Minimum four active window delay (tFAWmin) MSB 37.5ns 30ns -- --
30 SDRAM device output drivers suported
RZQ / 6,
RZQ / 7,
DLL-Off Mode Support,
RZQ / 6,
RZQ / 7,
DLL-Off Mode Support,
-- --
31 SDRAM device thermal and refresh options
Extended Temperature Range,
ASR,
ODTS,
PASR,
Extended Temperature Range,
ASR,
ODTS,
PASR,
-- --
32 Module Thermal Sensor Non Thermal Sensor Support Non Thermal Sensor Support -- --
33 SDRAM Device Type Standard Monolithic Device Standard Monolithic Device -- --
34-59 Reserved Undefined Undefined -- --
60 Module height (nominal) 29 ＜ height ≦ 30 mm 29 ＜ height ≦ 30 mm -- --
61 Module thickness (Max)
Back: 1 < thickness ≤ 2 mm,
Front: 1 < thickness ≤ 2 mm,
Back: 1 < thickness ≤ 2 mm,
Front: 1 < thickness ≤ 2 mm,
-- --
62 Raw Card ID reference Raw Card B Raw Card B -- --
63 DRAM address mapping edge connector Undefined Undefined -- --
64-116 Reserved Undefined Undefined -- --
117-118 Module manufacture ID Nanya Technology Nanya Technology -- --
119-121 Module manufacturer Information Undefined Undefined -- --
126-127 CRC Calculated Value Calculated Value -- --
Serial Presence Detect (Part 1 of 2) [NT4GC64B8HB0NF, 4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
Byte
Description
SPD Entry Value
Serial PD Data Entry (Hex.)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 13
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
-BE -CG -BE -CG
128-145 Module part number ASCII values ASCII values -- --
146 Module die revision Undefined Undefined -- --
147 Module PCB revision Undefined Undefined -- --
148-149 DRAM device manufacturer ID Nanya Technology Nanya Technology -- --
150-175 Manufacturer reserved Undefined Undefined -- --
176-255 Customer reserved Undefined Undefined -- --
Serial Presence Detect (Part 2 of 2) [NT4GC64B8HB0NF, 4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
Byte
Description
SPD Entry Value
Serial PD Data Entry (Hex.)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 14
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Environmental Requirements
Symbol
Parameter
Rating
Units
Note
TOPR
Module Operating Temperature Range (ambient)
0 to 55
°C
3
HOPR
Operating Humidity (relative)
10 to 90
%
1
TSTG
Storage Temperature (Plastic)
-55 to 100
°C
1
HSTG
Storage Humidity (without condensation)
5 to 95
%
1
PBAR
Barometric Pressure (operating & storage)
105 to 69
K Pascal
1, 2
Note:
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. Up to 9850 ft.
3. The component maximum case temperature shall not exceed the value specified in the component spec.
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Note
VDD
Voltage on VDD pins relative to Vss
-0.4 V ~ 1.975 V
V
1, 3
VDDQ
Voltage on VDDQ pins relative to Vss
-0.4 V ~ 1.975 V
V
1, 3
VIN, VOUT
Voltage on I/O pins relative to Vss
-0.4 V ~ 1.975 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1, 2
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer
to JESD51-2 standard.
3. VDD and VDDQ must be within 300 mV of each other at all times;and VREF must be not greater
Operating temperature Conditions
Symbol
Parameter
Rating
Units
Note
TOPER
Normal Operating Temperature Range
0 to 85
°C
1, 2
Extended Temperature Range
85 to 95
°C
1, 3
Note:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the
DRAM case temperature must be maintained between 0 to 85 °C under all operating conditions
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C case temperature. Full
specifications are supported in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 μs. It is also possible to specify
a component with 1X refresh (tREFI to 7.8μs) in the Extended Temperature Range. Please refer to supplier data sheet and/or the
DIMM SPD for option availability.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh
mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode
(MR2 A6 = 1b and MR2 A7 = 0b). Please refer to the supplier data sheet and/or the DIMM SPD for Auto Self-Refresh option
availability, Extended Temperature Range support and tREFI requirements in the Extended Temperature Range.
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 15
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
DC Electrical Characteristics and Operating Conditions
Symbol
Parameter
Min
Typ
Max
Units
Notes
VDD
Supply Voltage
1.425
1.5
1.575
V
1,2
VDDQ
Output Supply Voltage
1.425
1.5
1.575
V
1,2
Note:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Single-Ended AC and DC Input Levels for Command and Address
Symbol
Parameter
DDR3-1066 (-BE/-BF)
DDR3-1333 (-CG)
Units
Note
Min.
Max.
Min.
Max.
VIH.CA(DC)
DC Input Logic High
Vref + 0.100
VDD
Vref + 0.100
VDD
V
1
VIL.CA(DC)
DC Input Logic Low
VSS
Vref - 0.100
VSS
Vref - 0.100
V
1
VIH.CA(AC)
AC Input Logic High
Vref + 0.175
Note 2
Vref + 0.175
Note 2
V
1, 2
VIL.CA(AC)
AC Input Logic Low
Note 2
Vref - 0.175
Note 2
Vref - 0.175
V
1, 2
VIH.CA(AC150)
AC Input Logic High
Vref + 0.15
Note 2
Vref + 0.15
Note 2
V
1, 2
VIL.CA(AC150)
AC Input Logic Low
Note 2
Vref - 0.15
Note 2
Vref - 0.15
V
1, 2
VRefCA(DC)
Reference Voltage for
ADD, CMD Inputs
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
V
3, 4
Note:
1. For input only pins except RESET#. Vref = VrefCA(DC).
2. See “Overshoot and Undershoot Specifications” in the device datasheet.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
Single-Ended AC and DC Input Levels for DQ and DM
Symbol
Parameter
DDR3-1066 (-BE/-BF)
DDR3-1333 (-CG)
Units
Note
Min.
Max.
Min.
Max.
VIH.DQ(DC)
DC Input Logic High
Vref + 0.100
VDD
Vref + 0.100
VDD
V
1
VIL.DQ(DC)
DC Input Logic Low
VSS
Vref - 0.100
VSS
Vref - 0.100
V
1
VIH.DQ(AC)
AC Input Logic High
Vref + 0.175
Note 2
Vref + 0.15
Note 2
V
1, 2, 5
VIL.DQ(AC)
AC Input Logic Low
Note 2
Vref - 0.175
Note 2
Vref - 0.15
V
1, 2, 5
VRefDQ(DC)
Reference Voltage for
DQ, DM Inputs
0.49 x VDD
0.51 x VDD
0.49 x VDD
0.51 x VDD
V
3, 4
Note:
1. For input only pins except RESET#. Vref = VrefDQ(DC).
2. See “Overshoot and Undershoot Specifications” in the device datasheet.
3. The ac peak noise on VRef may not allow VRef to deviate from VRefDQ(DC) by more than +/-1% VDD (for reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
5. Single-ended swing requirement for DQS, DQS# is 350 mV (peak to peak). Differential swing requirement for DQS - DQS# is 700 mV
(peak to peak).
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 16
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Operating, Standby, and Refresh Currents
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
(-BE/-BF)
PC3-10600
(-CG)
Unit
IDD0
Operating One Bank Active-Precharge Current
--
--
mA
IDD1
Operating One Bank Active-Read-Precharge Current
--
--
mA
IDD2P0
Precharge Power-Down Current Slow Exit
--
--
mA
IDD2P1
Precharge Power-Down Current Fast Exit
--
--
mA
IDD2Q
Precharge Quiet Standby Current
--
--
mA
IDD2N
Precharge Standby Current
--
--
mA
IDD3P
Active Power-Down Current
--
--
mA
IDD3N
Active Standby Current
--
--
mA
IDD4R
Operating Burst Read Current
--
--
mA
IDD4W
Operating Burst Write Current
--
--
mA
IDD5B
Burst Refresh Current
--
--
mA
IDD6
Self Refresh Current: Normal Temperature Range
--
--
mA
IDD7
Operating Bank Interleave Read Current
--
--
mA
Operating, Standby, and Refresh Currents
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
(-BE/-BF)
PC3-10600
(-CG)
Unit
IDD0
Operating One Bank Active-Precharge Current
--
--
mA
IDD1
Operating One Bank Active-Read-Precharge Current
--
--
mA
IDD2P0
Precharge Power-Down Current Slow Exit
--
--
mA
IDD2P1
Precharge Power-Down Current Fast Exit
--
--
mA
IDD2Q
Precharge Quiet Standby Current
--
--
mA
IDD2N
Precharge Standby Current
--
--
mA
IDD3P
Active Power-Down Current
--
--
mA
IDD3N
Active Standby Current
--
--
mA
IDD4R
Operating Burst Read Current
--
--
mA
IDD4W
Operating Burst Write Current
--
--
mA
IDD5B
Burst Refresh Current
--
--
mA
IDD6
Self Refresh Current: Normal Temperature Range
--
--
mA
IDD7
Operating Bank Interleave Read Current
--
--
mA
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 17
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Operating, Standby, and Refresh Currents
TCASE = 0 °C ~ 85 °C; VDDQ = VDD = 1.5V ± 0.075V [4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
Symbol
Parameter/Condition
PC3-8500
(-BE/-BF)
PC3-10600
(-CG)
Unit
IDD0
Operating One Bank Active-Precharge Current
--
--
mA
IDD1
Operating One Bank Active-Read-Precharge Current
--
--
mA
IDD2P0
Precharge Power-Down Current Slow Exit
--
--
mA
IDD2P1
Precharge Power-Down Current Fast Exit
--
--
mA
IDD2Q
Precharge Quiet Standby Current
--
--
mA
IDD2N
Precharge Standby Current
--
--
mA
IDD3P
Active Power-Down Current
--
--
mA
IDD3N
Active Standby Current
--
--
mA
IDD4R
Operating Burst Read Current
--
--
mA
IDD4W
Operating Burst Write Current
--
--
mA
IDD5B
Burst Refresh Current
--
--
mA
IDD6
Self Refresh Current: Normal Temperature Range
--
--
mA
IDD7
Operating Bank Interleave Read Current
--
--
mA
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 18
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Speed Bins
Speed Bin
DDR3-1066 (-BE)
DDR3-1333 (-CG)
Unit
CL – tRCD - tRP
7-7-7
9-9-9
Parameter
Symbol
Min
Max
Min
Max
Internal read
command to first data
tAA
13.125
20
13.5
20
ns
ACT to internal read
or write delay time
tRCD
13.125
-
13.5
-
ns
PRE command period
tRP
13.125
-
13.5
-
ns
ACT to ACT or REF
command period
tRC
50.625
-
49.5
-
ns
ACT to PRE
command period
tRAS
37.5
9*tREFI
36
9*tREFI
ns
CL = 5
CWL=5
tCK(AVG)
3
3.3
3
3.3
ns
CWL=6, 7
tCK(AVG)
Reserved
Reserved
CL = 6
CWL=5
tCK(AVG)
2.5
3.3
2.5
3.3
ns
CWL=6, 7
tCK(AVG)
Reserved
Reserved
CL = 7
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
CWL=7
tCK(AVG)
Reserved
Reserved
CL = 8
CWL=5
tCK(AVG)
Reserved
Reserved
ns
CWL=6
tCK(AVG)
1.875
<2.5
1.875
<2.5
CWL=7
tCK(AVG)
Reserved
Reserved
CL = 9
CWL=5, 6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
1.5
<1.875
CL = 10
CWL=5, 6
tCK(AVG)
Reserved
Reserved
ns
CWL=7
tCK(AVG)
Reserved
1.5
<1.875
Supported CL settings
5, 6, 7, 8
5, 6, 7, 8, 9, (10)
nCK
Supported CWL Settings
5, 6
5, 6, 7
nCK
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 19
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
AC Timing Specifications for DDR3 SDRAM Devices Used on Module
Unit
min max min max
Clock Timing
tCK(DLL_OF
Minimum Clock Cycle Time (DLL off mode) 8 - 8 - ns
tCK(avg)
Average Clock Period(Refer to "Standard Speed
tCH(avg) Average high pulse width 0.47 0.53 0.47 0.53 tCK(avg)
tCL(avg) Average low pulse width 0.47 0.53 0.47 0.53 tCK(avg)
tCK(abs) Absolute Clock Period
tCK(avg)min +
tJIT(per)min
tCK(avg)max +
tJIT(per)max
tCK(avg)min +
tJIT(per)min
tCK(avg)max +
tJIT(per)max
ps
tCH(abs) Absolute high pulse width 0.43 -0.43 -tCK(avg)
tCL(abs) Absolute low pulse width 0.43 -0.43 -tCK(avg)
JIT(per) Clock Period Jitter -90 90 -80 80 ps
tJIT(per,lck) Clock Period Jitter during DLL locking period -80 80 -70 70 ps
tJIT(cc) Cycle to Clcyle Period Jitter ps
tJIT(cc,lck) Cycle to Cycle Period Jitter ps
tERR(2per) Cumulative error accross 2 cycles -132 132 -118 118 ps
tERR(3per) Cumulative error accross 3 cycles -157 157 -140 140 ps
tERR(4per) Cumulative error accross 4cycles -175 175 -155 155 ps
tERR(5per) Cumulative error accross 5cycles -188 188 -168 168 ps
tERR(6per) Cumulative error accross 6 cycles -200 200 -177 177 ps
tERR(7per) Cumulative error accross 7 cycles -209 209 -186 186 ps
tERR(8per) Cumulative error accross 8 cycles -217 217 -193 193 ps
tERR(9per) Cumulative error accross 9 cycles -224 224 -200 200 ps
tERR(10per) Cumulative error accross 10 cycles -231 231 -205 205 ps
tERR(11per) Cumulative error accross 11 cycles -237 237 -210 210 ps
tERR(12per) Cumulative error accross 12 cycles -242 242 -215 215 ps
tERR(nper) Cumulative error accross n=13,14,..,49,50 cycles
tERR(npr)min =
(1+ 0.68In(n)) *
tJIT(per)min
tERR(npr)max =
(1+ 0.68In(n)) *
tJIT(per)max
tERR(npr)min
= (1+
0.68In(n)) *
tJIT(per)min
tERR(npr)max
= (1+
0.68In(n)) *
tJIT(per)max
ps
Data Timing
tDQSQ DQS, DQS to DQ skew per group, per access - 150 -125 ps
tQH DQ output hold time from DQS, DQS 0.38 -0.38 -tCK(avg)
tLZ(DQ) DQ low-impedence time from CK / -600 300 -500 250 ps
tHZ(DQ) DQ high-impedence time from CK / -300 -250 ps
tDS(base)
AC175
Data Setup time to DQS, DQS referenced to
Vih(ac)/ Vil(ac) levels
25 - - ps
tDS(base)
AC150
Data Setup time to DQS, DQS referenced to
Vih(ac)/ Vil(ac) levels
75 30 -
tDH(base)
DC100
Data Hold time to DQS, DQS referenced to Vih(dc)/
Vil(dc) levels
100 65 -ps
tDIPW DQ and DM Input pulse width for each input 490 400 -
Data Strobe Timing
tRPRE DQS, DQS differential READ Preamble 0.9 Note 19 0.9 Note 19 tCK(avg)
tRPST DQS, DQS differential READ Postamble 0.3 Note 11 0.3 Note 11 tCK(avg)
tQSH DQS, DQS differential output high time 0.38 -0.4 -tCK(avg)
tQSL DQS, DQS differential output low time 0.38 -0.4 -tCK(avg)
tWPRE DQS, DQS differential WRITE Preamble 0.9 -0.9 -tCK(avg)
tWPST DQS, DQS differential WRITE Postamble 0.3 -0.3 -tCK(avg)
tDQSCK
DQS, DQS rising edge output access time from
rising CK,
-300 300 -255 255 ps
tLZ(DQS)
DQS, DQS low-impedance time (Referenced from
-600 300 -500 250 ps
tHZ(DQS)
DQS, DQS high-impedance time (Referenced from
RL+BL/2)
-300 -250 ps
tDQSL DQS, DQS differential input low pulse width 0.45 0.55 0.45 0.55 tCK(avg)
tDQSH DQS, DQS differential input high pulse width 0.45 0.55 0.45 0.55 tCK(avg)
tDQSS DQS, DQS rising edge to CK, rising edge -0.25 0.25 -0.25 0.25 tCK(avg)
tDSS
DQS, DQS falling edge setup time to CK, rising
edge
0.2 -0.2 - tCK(avg)
tDSH
DQS, DQS falling edge hold time to CK, rising
0.2 -0.2 -tCK(avg)
180
160
160
140
Symbol
Parameter
DDR3-1066 (-BE)
DDR3-1333 (-CG)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 20
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Unit
min max min max
Command and Address Timing
tDLLK DLL Locking time 512 -512 -nCK
tRTP
Internal READ command to PRECHARGE
Command delay
max(4nCK,
7.5ns)
-
max(4nCK,
7.5ns)
-
tWTR
Delay from start of internal write transaction to
internal read command
max(4nCK,
7.5ns)
-
max(4nCK,
7.5ns)
-
tWR WRITE recovery time 15 -15 -ns
tMRD Mode Register Set command cycle time 4 - 4 - nCK
tMOD Mode Register Set command update delay
max(12nCK,
15ns)
-
max(12nCK,
15ns)
-
tCCD CAS to CAS command delay 4 - 4 - nCK
tDAL Auto Precharge write recovery + precharge time nCK
tMPRR End of MPR Read burst to MSR for MPR (exit) 1 - 1 - nCK
tRAS
ACTIVE to PRECHARGE command period Refer to
"Standard Speed Bins"
tRRD
ACTIVE to ACTIVE command period (1k page size
-x4/x8)
max(4nCK,
7.5ns)
-
max(4nCK,
6ns)
-
tRRD
ACTIVE to ACTIVE command period (2k page size
-x16)
max(4nCK,
10ns)
-
max(4nCK,
7.5ns)
-
tFAW Four activate window (1k page size - x4/x8) 37.5 -30 0ns
tFAW Four activate window (2k page size - x16) 50 -45 0ns
tIS(base)
Command and Address setup time to CK,
referenced Vih(ac) / Vil(ac) levels
125 65 ps
tIH(base)
Command and Address hold time from CK,
referenced Vih(ac) / Vil(ac) levels
200 140 ps
tIS(base)
AC150
Commad and Address setup time to CK,
referenced to Vih(ac) / Vil(ac) levels
- - 65+125 ps
Calibration Timing
tZQinit Power-up and RESET calibration time 512 -512 -nCK
tZQoper Normal operation Full calibration time 256 -256 -nCK
tZQCS normal operation Short calibration time 64 -64 -nCK
tXPR Exit Reset from CKE HIGH to a valid command
max(5nCK,
tRFC(min)
+10ns)
-
max(5nCK,
tRFC(min)
+10ns)
-
Self RefreshTimings
tXS
Exit Self Refresh to Commands not requiring a
locked DLL
max(5nCK,
tRFC(min)
+10ns)
-
max(5nCK,
tRFC(min)
+10ns)
-
tXSDLL
Exit Self Refresh to Commands requiring a locked
tDLLK(min) - tDLLK(min) - nCK
tCKESR
Minimum CKE low width for Self Refresh entry to
exit timing
tCKE(min)+1nC
K
-
tCKE(min)+1n
CK
-
tCKSRE
Valid Clock Requirement after Self Refresh Entry
(SRE) or Power Down Entry (PDE)
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
tCKSRX
Valid Clock Requirement before Self Refresh
Exit(SRX) or Power-Down Exit (PDX) or Reset Exit
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
Power Down Timings
tXP
Exit Power Down with DLL on to any valid
command; Exit Precharge Power Down with DLL
frozen to commands not requiring a locked DLL
max(3nCK,
7.5ns)
-
max(3nCK,
6ns)
-
tXPDLL
Exit Precharge Power Down with DLL frozen to
commands requiring a locked DLL
max(10nCK,
24ns)
-
max(10nCK,
24ns)
-
tCKE CKE minimm pulse width
max(3nCK,
5.625ns)
-
max(3nCK,
5.625ns)
-
tCPDED Command Pass disable delay 1 - 1 - nCK
tPD Power Down Entry to Exit Timing tCKE(min) 9tREFI tCKE(min) 9tREFI
tACTPDEN Timing of ACT command to Power Down entry 1 - 1 - nCK
tPRPDEN
Timing of PRE or PREA command to Power Down
1 - 1 - nCK
tRDPDEN Timing of RD/RDA command to Power Down entry RL + 4 + 1 - RL + 4 + 1 - nCK
WR + roundup (tRP/tCK(avg))
DDR3-1333 (-CG)
Symbol
Parameter
DDR3-1066 (-BE)
WR + roundup (tRP/tCK(avg))
Reset Timing
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 21
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Unit
min max min max
tWRPDEN
Timing of WR command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
WL + 4 +
(tWR/tCK(avg))
-
WL + 4 +
(tWR/tCK(avg)
)
- nCK
tWRAPDEN
Timing of WRA command to Power Down entry
(BL8OTF, BL8MRS, BC4OTF)
WL + 4 + WR +
1
-
WL + 4 + WR
+ 1
- nCK
tWRPDEN
Timing of WR command to Power Down entry
(BC4MRS)
WL + 2 +
(tWR/tCK(avg))
-
WL + 2 +
(tWR/tCK(avg)
)
- nCK
tWRAPDEN
Timing of WRA command to Power Down entry
(BC4MRS)
WL + 2 + WR +
1
-
WL + 2 + WR
+ 1
- nCK
tREFPDEN Timing of REF command to Power Down entry 1 - 1 - nCK
tMRSPDEN Timing of MRS command to Power Down entry tMOD(min) - tMOD(min) -
ODT Timings
tODTH4
ODT high time without write command or with write
command and BC4
4 - 4 - nCK
tODTH8 ODT high time without write command oand BL8 6 - 6 - nCK
tAONPD
Asynchronous RTT turn-on delay (Power-Down with
DLL frozen)
28.5 28.5 ns
tAOFPD
Asynchronous RTT turn-off delay (Power Down with
DLL frozen)
28.5 28.5 ns
tAON RTT turn-on -300 300 -250 250 ps
tAOF
RTT_NOM and RTT_WR turn-off time from
ODTLoff reference
0.3 0.7 0.3 0.7 tCK(avg)
tADC RTT dynamic change skew 0.3 0.7 0.3 0.7 tCK(avg)
Write Leveling Timings
tWLMRD
First DQS/DQS rising edge after write leveling
mode is programmed
40 -40 - nCK
tWLDQSEN
DQS/DQS delay after write leveling mode is
25 -25 -nCK
tWLS
Write leveling setup time from rising CK, CK
crossing to rising DQS, DQS crossing
245 -195 -ps
tWLH
Write leveling hold time from rising DQS, DQS
crossing to rising CK, CK crossing
245 -195 -ps
tWLO Write leveling output delay 0 9 0 9 ns
tWLOE Write levleing output error 0 2 0 2 ns
tRFC REF command to ACT or REF command time ns
tREFI Average period refresh interval (0°C≤tCASE≤85°C) us
tREFI Average period refresh interval (85°C<tCASE≤95°C) us
Symbol
Parameter
DDR3-1066 (-BE)
110
110
7.8
3.9
DDR3-1333 (-CG)
7.8
3.9
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 22
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[NT1GC64BH4B0NF, 1GB – 1 Rank, 128Mx16 DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
BACK
3.80
4.00
1.00 Pitch
Detail A
9.50
133.35 +/- 0.15
Units: Millimeters
30.00 +0.5/-0.15
SIDE
2.57 Max.
1.27 +0.07/-0.10
17.30
5.175 47.00
Detail B
71.00
5.00
2.50
3.0 (x4)
Note: Device position and scale are only for reference.
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 23
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[NT2GC64B88B0NF, 2GB – 1 Rank, 256Mx8 DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
BACK
3.80
4.00
1.00 Pitch
Detail A
9.50
133.35 +/- 0.15
Units: Millimeters
30.00 +0.5/-0.15
SIDE
2.57 Max.
1.27 +0.07/-0.10
17.30
5.175 47.00
Detail B
71.00
5.00
2.50
3.0 (x4)
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 24
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Package Dimensions
[NT4GC64B8HB0NF, 4GB – 2 Ranks, 256Mx8 DDR3 SDRAMs]
FRONT
1.50 +/- 0.10
Detail A Detail B
0.80 +/- 0.05
BACK
3.80
4.00
1.00 Pitch
Detail A
9.50
133.35 +/- 0.15
Units: Millimeters
30.00 +0.5/-0.15
SIDE
4.00 Max.
1.27 +0.07/-0.10
17.30
5.175 47.00
Detail B
71.00
5.00
2.50
3.0 (x4)
Note: Device position and scale are only for reference.
NT1GC64BH4B0NF / NT2GC64B88B0NF / NT4GB8HB0NF
1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64
PC3-8500 / PC3-10600
Unbuffered DDR3 SDRAM DIMM
REV 0.1 25
01/2010
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Revision Log
Rev
Date
Modification
0.1
01/2010
Preliminary Release
Nanya Technology Corporation
Hwa Ya Technology Park 669
Fu Hsing 3rd Rd., Kueishan,
Taoyuan, 333, Taiwan, R.O.C.
Tel: +886-3-328-1688
Please visit our home page for more information: www.nanya.com
Printed in Taiwan
© 2010
