J/SST/U308 Series
Vishay Siliconix
Document Number: 70237
S-04028—Rev. G, 04-Jun-01 www.vishay.com
7-1
N-Channel JFETs
J308 SST308 U309
J309 SST309 U310
J310 SST310
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J308 –1 to –6.5 –25 8 12
J309 –1 to –4 –25 10 12
J310 –2 to –6.5 –25 8 24
SST308 –1 to –6.5 –25 8 12
SST309 –1 to –4 –25 10 12
SST310 –2 to –6.5 –25 8 24
U309 –1 to –4 –25 10 12
U310 –2.5 to –6 –25 10 24
FEATURES BENEFITS APPLICATIONS
DExcellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
DVery Low Noise: 2.7 dB @ 450 MHz
DVery Low Distortion
DHigh ac/dc Switch Off-Isolation
DWideband High Gain
DVery High System Sensitivity
DHigh Quality of Amplification
DHigh-Speed Switching Capability
DHigh Low-Level Signal Amplification
DHigh-Frequency Amplifier/Mixer
DOscillator
DSample-and-Hold
DVery Low Capacitance Switches
DESCRIPTION
The J/SST/U308 series o ffers s uperb a mplification characteristics.
Of special interest i s its high-frequency perform ance. Even at 450
MHz, this series offers high power gain at low noise.
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
For similar dual products packaged in the TO-78, see the
U430/431 data sheet.
D
S
G
TO-236
(SOT-23)
2
3
1
TO-226AA
(TO-92)
Top View
J308
J309
J310
D
G
S
1
2
3Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
*Marking Code for TO-236 Top View
U309
U310
G and Case
TO-206AC
(TO-52)
D
S
1
23
For applications information see AN104.
J/SST/U308 Series
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70237
S-04028—Rev. G, 04-Jun-01
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current : (J/SST Prefixes) 10 mA. . . . . . . . . . . . . . . . . . . .
(U Prefix) 20 mA. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature : (J/SST Prefixes) –55 to 150_C. . . . . . . . . . . . . .
(U Prefix) –65 to 175_C. . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : (J/SST Prefixes)a350 mW. . . . . . . . . . . . . . . . .
(U Prefix)b500 mW. . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (TA = 25_C UNLESS NOTED)
Limits
J/SST308 J/SST309 J/SST310
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –35 –25 –25 –25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –1–6.5 –1–4–2–6.5 V
Saturation Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 12 60 12 30 24 60 mA
VGS = –15 V, VDS = 0 V –0.002 –1–1–1 nA
Gate Reverse Current IGSS TA = 125_C–0.001 –1–1–1mA
Gate Operating Current IGVDG = 9 V, ID = 10 mA –15 pA
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W
Gate-Source Forward Voltage VGS(F) IG = 10 mA
VDS = 0 V J 0.7 1 1 1 V
Dynamic
Common-Source
Forward T ransconductance gfs VDS = 10 V, ID = 10 mA 14 810 8mS
Common-Source
Output Conductance gos
VDS = 10 V, ID = 10 mA
f = 1 kHz 110 250 250 250 mS
Common-Source J 4 5 5 5
Common-Source
Input Capacitance Ciss VDS = 10 V SST 4
Common-Source
DS
VGS = –10 V
f = 1 MHz J 1.9 2.5 2.5 2.5 pF
Common-Source
Reverse Transfer Capacitance Crss f = 1 MHz SST 1.9
Equivalent Input
Noise Voltage enVDS = 10 V, ID = 10 mA
f = 100 Hz 6nV⁄
√Hz
High Frequency
Common-Gate f = 105 MHz 14
Common-Gate
Forward T ransconductance gfg f = 450 MHz 13
Common-Gate f = 105 MHz 0.16 mS
Common-Gate
Output Conductance gog VDS = 10 V f = 450 MHz 0.55
VDS = 10 V
ID = 10 mA f = 105 MHz 16
Common-Gate Power GaincGpg f = 450 MHz 11.5
f = 105 MHz 1.5 dB
Noise Figure NF f = 450 MHz 2.7
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
J/SST/U308 Series
Vishay Siliconix
Document Number: 70237
S-04028—Rev. G, 04-Jun-01 www.vishay.com
7-3
SPECIFICATIONS FOR U309 AND U310 (TA = 25_C UNLESS NOTED)
Limits
U309 U310
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –35 –25 –25 V
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –1–4–2.5 –6 V
Saturation Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 12 30 24 60 mA
VGS = –15 V, VDS = 0 V –0.002 –0.15 –0.15 nA
Gate Reverse Current IGSS TA = 125_C–0.001 –0.15 –0.15 mA
Gate Operating Current IGVDG = 9 V, ID = 10 mA –15 pA
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 35 W
Gate-Source Forward Voltage VGS(F) IG = 10 mA , VDS = 0 V 0.7 1 1 V
Dynamic
Common-Source
Forward T ransconductance gfs VDS = 10 V, ID = 10 mA 14 10 10 mS
Common-Source
Output Conductance gos
VDS = 10 V, ID = 10 mA
f = 1 kHz 110 250 250 mS
Common-Source
Input Capacitance Ciss VDS = 10 V, VGS = –10 V 4 5 5
Common-Source
Reverse Transfer Capacitance Crss
VDS = 10 V, VGS = –10 V
f = 1 MHz 1.9 2.5 2.5 pF
Equivalent Input Noise Voltage enVDS = 10 V, ID = 10 mA
f = 100 Hz 6nV⁄
√Hz
High Frequency
Common-Gate f = 105 MHz 14
Common-Gate
Forward T ransconductance gfg f = 450 MHz 13
Common-Gate f = 105 MHz 0.16 mS
Common-Gate
Output Conductance gog V = 10 V f = 450 MHz 0.55
VDS = 10 V
ID = 10 mA f = 105 MHz 16 14 14
Common-Gate Power GaincGpg f = 450 MHz 11.5 10 10
f = 105 MHz 1.5 2 2 dB
Noise Figure NF f = 450 MHz 2.7 3.5 3.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NZB
b. Pulse test: PW v300 ms duty cycle v3%.
c. Gain (Gpg) measured at optimum input noise match.
J/SST/U308 Series
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70237
S-04028—Rev. G, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100
0–5–4–3–1
80
20
0
50
40
10
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
Output Characteristics
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance
vs. Drain Current
VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V)
ID – Drain Current (mA)VGS(off) – Gate-Source Cutoff Voltage (V)
VDS – Drain-Source Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
TA = –55_C
25_C125_C
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
VGS(off) = –3 V
60
40
–2
30
20
100
–3–5–4–1
80
0
300
240
120
60
0
60
40
20
–20
180
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
rDS
06312159
IGSS @ 125_C
TA = 125_C
TA = 25_C
200 mA
0.1 1 10
20
16
8
4
0
12
15
0 0.40.2 0.8 1
12
6
3
0
9
0.6
–1.0 V
gos
IGSS @ 25_C
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
VDS = 10 V
f = 1 kHz
VGS(off) = –1.5 V
10 mA
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–1.2 V
–0.4 V
–1.6 V
–0.8 V
30
0 0.40.2 0.8 1
24
12
6
0
18
0.6
–2.0 V
–2.4 V
VGS(off) = –3 V
IG @ ID = 10 mA 200 mA
IDSS – Saturation Drain Current (mA)
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance ( Ω )
gos – Output Conductance (mS)
IG – Gate Leakage
ID – Drain Current (mA)
ID – Drain Current (mA) gfs – Forward Transconductance (mS)
J/SST/U308 Series
Vishay Siliconix
Document Number: 70237
S-04028—Rev. G, 04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
VDS – Drain-Source Voltage (V)
50
042810
40
20
10
0
30
6
–2.4 V
VGS = 0 V
–0.4 V
–0.8 V
–1.2 V
–1.6 V
–2.0 V
Transfer Characteristics
VGS – Gate-Source Voltage (V)
30
0–1.2–0.4 –1.6 –2
24
12
6
0
18
–0.8
TA = –55_C
VGS(off) = –1.5 V
125_C
Transfer Characteristics
VGS – Gate-Source Voltage (V)
100
0–1.8–0.6 –2.4 –3
80
40
20
0
60
–1.2
TA = –55_C
25_C
VGS(off) = –3 V
125_C
30
0–1.2 –1.6–0.4 –2
24
12
6
0–0.8
18
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
VGS(off) = –1.5 V
TA = –55_C
125_C
50
0–1.8 –2.4–0.6 –3
40
20
10
0–1.2
30
Transconductance vs. Gate-Source Voltage
VGS – Gate-Source Voltage (V)
TA = –55_C
25_C
125_C
VGS(off) = –3 V
VGS(off) = –3 V
VDS = 10 V VDS = 10 V
VDS = 10 V
f = 1 kHz VDS = 10 V
f = 1 kHz
25_C
25_C
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
20
068210
16
8
4
04
12
VGS(off) = –1.5 V
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS) ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
ID – Drain Current (mA)
J/SST/U308 Series
Vishay Siliconix
www.vishay.com
7-6 Document Number: 70237
S-04028—Rev. G, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1 10 100
100
80
40
20
0
60 VGS(off) = –1.5 V
VGS(off) = –3 V
On-Resistance vs. Drain Current
ID – Drain Current (mA)
1100.1
100
80
40
20
0
60
ID – Drain Current (mA)
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
VGS(off) = –1.5 V
VGS(off) = –3 V
Circuit Voltage Gain vs. Drain Current
15
0–12 –16 –20–4
12
6
3
0
9
–8
Common-Source Input Capacitance
vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
VDS = 5 V
VGS – Gate-Source Voltage (V)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
0–12 –20–16–4
8
4
2
0
6
–8
VDS = 0 V
f = 1 MHz
VDS = 5 V
VGS – Gate-Source Voltage (V)
100
10
1
0.1100 1000
(mS)
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
gig
big
Input Admittance vs. Frequency
f – Frequency (MHz)
100
10
1
0.1 100 1000
(mS)
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
–gfg
bfg
Forward Admittance vs. Frequency
f – Frequency (MHz)
200 500 200 500
AV+
gfs RL
1)RLgos
AV – Voltage Gain
rDS(on) – Drain-Source On-Resistance ( Ω )
Ciss – Input Capacitance (pF)
Crss – Reverse Feedback Capacitance (pF)
J/SST/U308 Series
Vishay Siliconix
Document Number: 70237
S-04028—Rev. G, 04-Jun-01 www.vishay.com
7-7
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
20
16
8
4
0
12
Equivalent Input Noise Voltage vs. Frequency
ID = 1 mA
VDS = 10 V
ID = 10 mA
f – Frequency (Hz)
150
120
60
30
00.1 1 10
90
Output Conductance vs. Drain Current
VGS(off) = –3 V
ID – Drain Current (mA)
TA = –55_C
25_C
125_C
10
1
0.1
0.01 100 1000
(mS)
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
–brg
–grg
+grg
Reverse Admittance vs. Frequency
f – Frequency (MHz)
100
10
1
0.1 100 1000
(mS)
TA = 25_C
VDG = 10 V
ID = 10 mA
Common–Gate
gog
bog
Output Admittance vs. Frequency
f – Frequency (MHz)
200 500 200 500
VDS = 10 V
f = 1 kHz
en – Noise Voltage nV / Hz
gos – Output Conductance (µS)
