© 2000 IXYS All rights reserved 1 - 4
Symbol Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 1200 V
VCGR TJ = 25°C to 150°C; RGE = 20 kW1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C 60 A
IC90 TC = 90°C 38 A
ICM TC = 90°C, tp = 1 ms 76 A
RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 W ICM = 50 A
Clamped inductive load, L = 30 µH VCEK < VCES
tSC VGE = ±15 V, VCE = VCES, TJ = 125°C 10 µs
(SCSOA) RG = 47 W, non repetitive
PCTC = 25°C IGBT 300 W
Diode 135 W
TJ-55 ... +150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque 1.1/10 Nm/lb.in.
Weight 6g
VCES = 1200 V
IC25 = 60 A
VCE(sat) typ = 2.4 V
Features
●NPT IGBT technology
●low saturation voltage
●low switching losses
●square RBSOA, no latch up
●high short circuit capability
●positive temperature coefficient for
easy paralleling
●MOS input, voltage controlled
●optional ultra fast diode
●International standard packages
Advantages
●Space savings
●High power density
●IXDT:
surface mountable high power package
Typical Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninteruptible power supplies (UPS)
●Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 30N120
IXDH 30N120 D1
IXDT 30N120
IXDT 30N120 D1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES VGE = 0 V 1200 V
VGE(th) IC = 1 mA, VCE = VGE 4.5 6.5 V
ICES VCE = VCES TJ = 25°C 1.5 mA
TJ = 125°C 2.5 mA
IGES VCE = 0 V, VGE = ± 20 V ± 500 nA
VCE(sat) IC = 30 A, VGE = 15 V 2.4 2.9 V
TO-247 AD (IXDH)
G
E
CC (TAB)
TO--268 AA (IXDT)
G
EC (TAB)
G = Gate, E = Emitter
C = Collector , TAB = Collector
IXDH 30N120 IXDH 30N120 D1
IXDT 30N120 IXDT 30N120 D1
G
C
E
G
C
E
031
© 2000 IXYS All rights reserved 2 - 4
IXDH 30N120 IXDT 30N120
IXDH 30N120 D1 IXDT 30N120 D1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies 1650 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 250 pF
Cres 110 pF
QgIC = 30 A, VGE = 15 V, VCE = 0.5 VCES 120 nC
td(on) 100 ns
tr70 ns
td(off) 500 ns
tf70 ns
Eon 4.6 mJ
Eoff 3.4 mJ
RthJC 0.42 K/W
RthCK Package with heatsink compound 0.25 K/W
Inductive load, TJ = 125°C
IC = 30 A, VGE = ±15 V,
VCE = 600 V, RG = 47 W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
VFIF = 30 A, VGE = 0 V 2.5 2.7 V
IF = 30 A, VGE = 0 V, TJ = 125°C 2.0 V
IFTC = 25°C 60 A
TC = 90°C 35 A
IRM IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V 20 A
trr VGE = 0 V, TJ = 125°C 200 ns
trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
RthJC 1 K/W
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 AA Outline Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A12.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b21.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E113.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
© 2000 IXYS All rights reserved 3 - 4
0 200 400 600 800 1000
0
20
40
60
0
100
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300
01234
0
10
20
30
40
50
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70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
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0 20 40 60 80 100 120 140
0
5
10
15
20
0.00.51.01.52.02.53.03.5
0
10
20
30
40
50
60
13V
11V
TJ = 25°CVGE=17V
TJ = 125°C
VCE = 600V
IC = 25A
15V
567891011
0
10
20
30
40
50
60
13V
11V
VGE=17V
15V
VCE = 20V
TJ = 25°C
9V 9V
VCE
V
A
IC
VCE
A
IC
V
V
V
VGE VF
A
IC
A
IF
nC
QG-di/dt
V
VGE
A
IRM trr
ns
A/
m
s
IXDH30N120
TJ = 125°C
VR = 600V
IF = 30A
TJ = 25°C
TJ = 125°C
IRM
trr
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXDH 30N120 IXDT 30N120
IXDH 30N120 D1 IXDT 30N120 D1
© 2000 IXYS All rights reserved 4 - 4
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 1020304050
0
2
4
6
8
10
12
14
0
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60
80
100
120
140
0 1020304050
0
1
2
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6
0
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0.00001 0.0001 0.001 0.01 0.1 1
0.0001
0.001
0.01
0.1
1
10
0 40 80 120 160 200 240
0
1
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5
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300
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900
1200
1500
0 40 80 120 160 200 240
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0
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180
240
single p uls e
VCE = 600V
VGE = ±15V
RG = 47
W
TJ = 125°C
IXDH30N120
VCE = 60 0V
VGE = ±15V
IC = 25A
TJ = 125°C
0 200 400 600 800 1000 1200
0
10
20
30
40
50
60
RG = 47
W
TJ = 125°C
VCEK < VCES
VCE = 600V
VGE = ±15V
RG = 47
W
TJ = 125°C
Eon
VCE = 600V
VGE = ±1 5 V
IC = 25A
TJ = 125°C
td(on)
trEoff
td(off)
tf
Eon
td(on)
tr
Eoff
td(off)
tf
IC
AIC
A
Eoff
Eon tt
RG
W
RG
W
VCE ts
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ
IXDH 30N120 IXDT 30N120
IXDH 30N120 D1 IXDT 30N120 D1
