OPTEK TECHNOLOGY INC QbhE D i 6796540 g00014e O i Optoelectronics Division T~t~6] == nae TAW Electronic Components Group a ty , Product Bulletin 5093 January 1985 NPN Silicon Phototransistors Types OP500, OPSOOSLD, OPS00SLC, OPS00SLB, OPS00SLA ey OIMENSIONS ARE iN INCHES (MILLIMETERS). = 165 (4.19) {eage. 500) (12.0 148 (3.68) 050 (1,27) EMITTER ROM ] j == COLLECTOR | 025 (0.64) O15 (0.38) ~ 030 (0.76) Features Absolute Maximum Ratings (Ta = 25C unless otherwise noted) Wide range of collector currents Collector-Emitter Voltage 2.02.02... cscs ccccccesceuevagecuecceseee Lee ee eet eeateneeees a0V Lensed for high sensitivity Emittar-Collactar Voltage 0... 2... eee ccessececesveveccucavevecctevevevensuaes 5.0V Low cost plastic package Storage and Operating Temperature Range ..........c..cececsccecececveccceces -40C to +100C Lead Soldering Temperature (1/16 inch (1.6 mm] from case for 5 see. with soldering iron 6.2.0... 240C Dascription Powar Dissipation oo... 0... eee cecccee sec ceccetecvevenatatatestseatutucnencecce. 100 mw2 The OP&00 and OPSO0SLD through SLA each Notes: - consist of an NPN silicon phototransistor mounted _{1) AMA flux is recommended. Duration can be extended to 10 sec. max. when wave soldering. in a lensed, clear plastic, end looking package, at eee eer nate The lensing effect of tha package allows an {4} Light sourca is an unfitersd tungsten bulb operating at CT = 2870K or equivslent infrared source. acceptance half angle of 8 measured from the optical axis to tha half power paint. This saries is mechanically and spectrally matched to the OPIGOSL and OP2GOSL series of infrared emitting Typical Pertormance Curves (Gt To calculate typical collector dark currant in wA, usa the formula Iceg ~ 10940 T- 34) where Ty is ambient temperature in C. diodes. , soot Photosensor Spectral Response Coupling Characteristics vs. GaAlAs and GaAs of OP1GO0SL and OP500 100 1.0 Fd i z a0 oe = 5 5 f= 20 mA = = Vee =5 = 60 3 08 Ss 5 y 2 2 40 a N 04 # s & 20 2 a2 > # 0 0 s00 = 700 800, S00 e001 400 o 860206 04 8a ) WAVELENGTH Nanometers DISTANCE BETWEEN LENS TIPS Inches Test Conditions {LED}: Ty = Ty = 25C, Ig = 100 mA. OC <0,1%, PW = 100 ps Faak Wavelength - dp: {A} XSTA 850 2 30 nm, (8) LED GaAlAs 875 + 20 om, (C) LEO GaAs 930 15 nv Optoslectronics Division, TRW Electronte Components Group, 1215 W. Crosby Rd., Carrollton, TX 75006 (214) 323-2200, TLX 6716092 of 215040OPTEK TECHNOLOGY INC QObE D eraasao oo00143 c i Types OP500, OPSOOSLD, OPSOOSLC, OPSO0SLB, OPSOOSLA Y- 4 |-lo| Electrical Characteristics (Ta = 25C unless otherwise noted) mbol Parameter in. | Typ. |Max.| Units Tast Conditions Ijin} | On-State Collector Currant OPs00 | 4.0 mA | Voge = 6.0 V, Eg = 20 mW/emett! OPEOOSLD | 10.0 24 mA | Vee = 6.0 V, fy = 20 mWicme OPSOOSLC j 17.0 36 mA | Vcp= 5.0 V, Eg = 20 mWicme4 OPSOOSLB | 26 60 mA | Veg = 6.0 V, Eg = 20 mWieme") - QPSOOSLA | 40 mA | Veg = 6.0 V, Eg = 20 mW/em2t Alc/AT _ | Relative ic Changes with Tamperatura 1.00 HC | Vee = 5.0 V, Eg = 1.00 mv/em?, A = 875 nm leeg' Collector Oark Current 100 nA | Vce= 16.0 V, Fg =0 Yaryceo _ | Celtector-Emitter Breakdown Voltage 30 Vv Ip = 100 pA VipRiEca | Emitter-Catlector Breakdown Voltage 5.0 Vv Ig = 100 pA Veetsari | Collector-Emitter Saturation Voltage : 0,40 V | tg = 0.50 mA, Ey = 20 mWiem2 Typical Performance Curves Normalized Collector Current vs. Angular Displacement 12 & 10 g 3 os E dos 3 95 at 5 04 <= z 2 02 0 40 30 20 10 O 10 20 30 40 @ ANGULAR DISPLACEMENT Deg. Rise and Fall Time vs. Load Resistance 240 7 Vit s iV = 100 Hz 4 200 PW 1 ms w LED = OP200C @ \ = 875 nm = 180 $$ VOLTAGE ACROSS Ry 3 = B 20 z 4 = ad j F 40 0 0 2 4 8 8 tt Py ~ LOAD RESISTANCE ki? 100 icon) ~ ON-STATE COLLECTOR CURRENT mA NORMALIZED OUTPUT On-State Collector Currant vs. Irradiance SIM my Fry ty TT i 4 Eas 4 FP (c) Tungsten 2870 Yr A = 1k = C A q on 4 (3) a 001 =] v. tail pil i O.0ot 60.01 at 1 10 100 _ IRRADIANCE micm? Normalized Output vs. Frequency "0 Try Ty TTT \ J KT 2 - Rp = 10K \ \ ) ! CKT 1-RL = 1K 05 \ \ he oul USS ee 1 10 100 1,000 10,000 FREQUENCY KHz Normalized Collector Current vs. Collector to Emitter Voltage 20 Tas L = per stop, A= =z 2 A: Offeat Region (~ 30 2 & at fed a igxt 2 10 g i 2 1 s a 0 0.26 05 Voe COLLECTOR 10 EMITTER Volts Switching Time Test Circuit ciRCUIT 1 CIRCUIT 2 I Veo 5 't Voo=5 TRW reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optoelactronics Division, TRW Electronic Components Group, 1215 W. Crosby Rd., Carrollton, TX 75006 (214) 323-2200, TLX 6716032 or 21bgtS TAW Inc. 1985. TRW is the name and mark of TAW Inc. 41 Printed ia U