PMBFJ175T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product speciﬁcation

File under Discrete Semiconductors, SC07 April 1995

DISCRETE SEMICONDUCTORS

PMBFJ174 to 177

P-channel silicon field-effect

transistors

April 1995 2

Philips Semiconductors Product speciﬁcation

P-channel silicon ﬁeld-effect transistors PMBFJ174 to 177

DESCRIPTION

Silicon symmetrical p-channel

junction FETs in plastic

microminiature SOT23

envelopes.They are intended for

application with analogue switches,

choppers, commutators etc. using

SMD technology. A special feature is

the interchangeability of the drain and

source connections.

PINNING

Note

1. Drain and source are

interchangeable.

Marking codes:

1 = drain

2 = source

3 = gate

174 : p6X

175 : p6W

176 : p6S

177 : p6Y

Fig.1 Simplified outline and symbol, SOT23.

handbook, halfpage

Top view

MAM386

QUICK REFERENCE DATA

Drain-source voltage ±VDS max. 30 V

Gate-source voltage VGSO max. 30 V

Gate current −IGmax. 50 mA

Total power dissipation

up to Tamb =25°CP

tot max. 300 mW

Drain current

−VDS = 15 V; VGS =0

PMBFJ174 175 176 177

−IDSS >

<20

135 7

70 2

35 1,5

20 mA

Drain-source ON-resistance

−VDS = 0,1 V; VGS =0 R

DS on <85 125 250 300 Ω

April 1995 3

Philips Semiconductors Product speciﬁcation

P-channel silicon ﬁeld-effect transistors PMBFJ174 to 177

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

STATIC CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed

Note

1. Mounted on a ceramic substrate of 8 mm ×10 mm ×0,7 mm.

Drain-source voltage ±VDS max. 30 V

Gate-source voltage VGSO max. 30 V

Gate-drain voltage VGDO max. 30 V

Gate current (d.c.) −IGmax. 50 mA

Total power dissipation

up to Tamb =25°C

(1) Ptot max. 300 mW

Storage temperature range Tstg −65 to +150 °C

Junction temperature Tjmax. 150 °C

From junction to ambient in free air Rth j-a = 430 K/W

PMBFJ174 175 176 177

Gate cut-off current

VGS = 20 V; VDS =0 I

GSS <1111nA

Drain cut-off current

−VDS = 15 V; VGS = 10 V −IDSX <1111nA

Drain current >

<20

135 7

70 2

35 1,5

20 mA

−VDS = 15 V; VGS =0 −I

DSS

Gate-source breakdown voltage

IG=1µA; VDS =0 V

(BR)GSS >30 30 30 30 V

Gate-source cut-off voltage >

10 3

40,8

2,25 V

−ID= 10 nA; VDS =−15 V VGS off

Drain-source ON-resistance

−VDS = 0,1 V; VGS =0 R

DS on <85 125 250 300 Ω

April 1995 4

Philips Semiconductors Product speciﬁcation

P-channel silicon ﬁeld-effect transistors PMBFJ174 to 177

DYNAMIC CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed

Input capacitance, f = 1 MHz

VGS = 10 V; VDS =0 V C

is typ. 8 pF

VGS =V

DS =0 C

is typ. 30 pF

Feedback capacitance, f = 1 MHz

VGS = 10 V; VDS =0 V C

rs typ. 4 pF

Switching times (see Fig.2 +3) PMBFJ174 175 176 177

Delay time tdtyp. 2 5 15 20 ns

Rise time trtyp. 5 10 20 25 ns

Turn-on time ton typ. 7 15 35 45 ns

Storage temperature tstyp. 5 10 15 20 ns

Fall time tftyp. 10 20 20 25 ns

Turn-off time toff typ. 15 30 35 45 ns

Test conditions: −VDD 10 6 6 6 V

VGS off 12 8 6 3 V

RL560 1200 2000 2900 Ω

VGS on 000 0V

Fig.2 Switching times test circuit

handbook, halfpage

MBK292

50 Ω

D.U.T

50 Ω

Vin

Vout

−VDD

Fig.3 Input and output waveforms

td+tr=t

ts+tf=t

off

Rise time input voltage <1 ns

MBK293

VGSoff

INPUT

OUTPUT

90%

10%

90%

10%

90%

April 1995 5

Philips Semiconductors Product speciﬁcation

P-channel silicon ﬁeld-effect transistors PMBFJ174 to 177

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

April 1995 6

Philips Semiconductors Product speciﬁcation

P-channel silicon ﬁeld-effect transistors PMBFJ174 to 177

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Short-form speciﬁcation The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.