1/9
®
TN8, TS8 and TYNx08 Series
SENSITIVE & STANDARD 8A S CRs
April 2002 - Ed: 4A
MAIN FEATUR ES:
DESCRIPTION
Available either in sensitive (TS8) or standard
(TN8 / TYN) gate triggering levels, the 8A SCR
series is suitable to fit all modes of control, found
in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits...
Available in through-hole or surface-mount
pack ages, they provide an optim ized performance
in a limited space area.
Symbol Value Unit
IT(RMS) 8A
V
DRM/VRRM 600 to 1000 V
IGT 0.2 to 15 mA
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180° conduction angle) Tc = 110°C 8 A
IT(AV) Average on-state current (180° conduction angle) Tc = 110°C 5 A
TS8/TN8 TYN
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms Tj = 25°C 73 100 A
tp = 10 ms 70 95
I²tI
²
t Value for fusing tp = 10 ms Tj = 25°C 24.5 45 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W
Tstg
Tj Storage junction temperature range
Operatin g junction temp erature range - 40 to + 150
- 40 to + 125 °C
VRGM Maximum peak reverse gate voltage (for TN8 & TYN only) 5 V
A
K
G
A
G
A
K
DPAK
(TS8-B)
(TN8-B)
A
A
KGIPAK
(TS8-H)
(TN8-H)
A
A
K
G
G
A
A
K
TO-220AB
(TS8-T) TO-220AB
(TYNx)
TN8, TS8 and TYNx08 Series
2/9
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SENSITIVE
STANDARD
THERMA L RESISTANCES
S= copper surface under tab
Symbol Test Conditions TS820 Unit
IGT VD = 12 V RL = 140 MAX. 200 µA
VGT MAX. 0.8 V
VGD VD = VDRM RL = 3.3 k RGK = 220 Tj = 125°C MIN. 0.1 V
VRG IRG = 10 µAMIN. 8V
I
H
I
T
= 50 mA RGK = 1 kMAX. 5 mA
ILIG = 1 mA RGK = 1 kMAX. 6 mA
dV/dt VD = 65 % VDRM RGK = 220 Tj = 125°C MIN. 5 V/µs
VTM ITM = 16 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
RdDynamic resistance Tj = 125°C MAX. 46 m
IDRM
IRRM VDRM = VRRM RGK = 220 Tj = 25°C MAX. 5 µA
Tj = 125°C 1 mA
Symbol Test Conditions TN805 TN815 TYNx08 Unit
IGT VD = 12 V RL = 33 MIN. 0.5 2 2 mA
MAX. 5 15 15
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kTj = 125°C MIN. 0.2 V
IH IT = 100 mA Gate open MAX. 25 40 30 mA
ILIG = 1.2 IGT MAX. 30 50 70 mA
dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 50 150 150 V/µs
VTM ITM = 16 A tp = 380 µs Tj = 25°C MAX. 1.6 V
Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V
RdDynamic resistance Tj = 125°C MAX. 46 m
IDRM
IRRM VDRM = VRRM Tj = 25°C MAX. 5 µA
Tj = 125°C 2 mA
Symbol Parameter Value Unit
Rth(j-c) Junction to case (DC) 20 °C/W
Rth(j-a) Junction to ambient (DC) TO-220AB 60 °C/W
IPAK 100
S = 0.5 cm²DPAK 70
/T
TN8, TS8 and TYNx08 Series
3/9
PRODUCT SELECTOR
ORDERING INFORMATION
Part Number Voltage (xxx) Sensitivity Package
600 V 700 V 800 V 1000 V
TN805-xxxB X X 5 mA DPAK
TN805-xxxH X X 5 mA IPAK
TN815-xxxB X X 15 mA DPAK
TN815-xxxH X X 15 mA IPAK
TS820-xxxB X X 0.2 mA DPAK
TS820-xxxH X X 0.2 mA IPAK
TS820-xxxT X X 0.2 mA TO-220AB
TYNx08 X X X 15 mA TO-220AB
TN 8 05 - 600 B (-TR)
STANDARD
SCR
SERIES
CURRENT: 8A SENSITIVITY:
05: 5mA
15: 15mA
VOLTAGE:
600: 600V
800: 800V
PACKAGE:
B: DPAK
H: IPAK
PACKING MODE:
Blank:Tube
-TR: DPAKTape & Reel
TS 8 20 - 600 B (-TR)
SENSITIVE
SCR
SERIES
CURRENT: 8A SENSITIVITY:
20: 200µA VOLTAGE:
600: 600V
700: 700V
PACKAGE:
B: DPAK
H: IPAK
T:TO-220AB
PACKING MODE:
Blank:Tube
-TR: DPAKTape & Reel
VOLTAGE:
6: 600V
8: 800V
10: 1000V
STANDARD
SCR
SERIES
CURRENT: 8A
TYN 6 08 (RG)
PACKING MODE
Blank: Bulk
RG:Tube
TN8, TS8 and TYNx08 Series
4/9
OTHER INFORMATION
Note: x = volta ge
Part Number Marking Weight Base Quantity Packing mode
TN805-x00B TN805x00 0.3 g 75 Tube
TN805-x00B-TR TN805x00 0.3 g 2500 Tape & reel
TN805-x00H TN805x00 0.4 g 75 Tube
TN815-x00B TN815x00 0.3 g 75 Tube
TN815-x00B-TR TN815x00 0.3 g 2500 Tape & reel
TN815-x00H TN815x00 0.4 g 75 Tube
TS820-x00B TS820x00 0.3 g 75 Tube
TS820-x00B-TR TS820x00 0.3 g 2500 Tape & reel
TS820-x00H TS820x00 0.4 g 75 Tube
TS820-x00T TS820x00T 2.3 g 50 Tube
TYNx08 TYNx08 2.3 g 250 Bulk
TYNx08RG TYNx08 2.3 g 50 Tube
Fig. 1: Maximum average power dissipation
versus average on-state current. Fig. 2-1: Average and D.C. on-state current
versus case temperature.
Fig. 2-2: Average and D.C. on-state current
versus ambient tem pera ture (device mount ed on
FR4 with recommend ed pad layout ) (DPAK).
Fig. 3-1: Relative variation of ther m al impedance
juncti on to case versus pulse duration.
0123456
0
1
2
3
4
5
6
7
8
P(W)
α= 180°
IT(av)(A)
360°
α
0 25 50 75 100 125
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 IT(av)(A)
DC
α= 180°
Tcase(°C)
0 25 50 75 100 125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0 IT(av)(A)
α=180°
DC
Tamb(°C)
1E-3 1E-2 1E-1 1E+0
0.1
0.2
0.5
1.0 K = [Zth(j-c )/Rth(j-c)]
tp(s)
TN8, TS8 and TYNx08 Series
5/9
Fig. 3-2: Relative vari ation of thermal impeda nce
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board for
DPAK).
Fig. 4-1 : Relative variation of gate tri gger current
and holding current versus junction temperature
for TS8 series.
Fig. 4-2: Relativ e variation of gate trigger current
and holding current versus junction temperature
for TN8 & TYN ser ies.
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values)
for TS8 series.
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values)
for TS8 serie s.
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode c apacitance (typical values )
for TS8 series.
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 K = [Zth(j-a )/Rth(j-a)]
DPAK
TO-220AB
tp(s)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0 IGT,IH,IL [T j] / IGT,IH,IL [T j = 2 5°C]
IGT
IH & IL
Rgk = 1k
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4 IGT,IH,IL [T j] / IGT,IH,IL [T j = 2 5°C]
IGT
IH & IL
Tj(°C)
IH[Rgk] / IH[Rgk = 1k ]
Rgk(k )
Rgk(k )
dV/dt[Rgk] / dV/dt [Rgk = 220 ]
0 20 40 60 80 100 120 140 160 180 200 220
0.0
2.5
5.0
7.5
10.0
12.5
15.0 VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220
dV/dt[Cgk] / dV /d t [Rgk = 2 2 0 ]
Cgk(nF)
TN8, TS8 and TYNx08 Series
6/9
Fig. 8: Surge peak on-state current versus
num ber of cycle s. TS8/TN8/T YN. Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value s of I²t.
Fig. 10: On-state characteristics (maximum
values). Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(DPAK).
1 10 100 1000
0
10
20
30
40
50
60
70
80
90
100 ITSM(A)
TYN
TS8/TN8
Non repetitive
Tj initial = 2 5°C
Repetitive
Tcase = 110°C
Number of cycles
One cycle
tp = 10ms
0.01 0.10 1.00 10.0
0
10
100
1000 ITSM(A),I2t(A2s)
Tj initial = 25°C
ITSM
I2t
dI/dt
limitattion TYN
TS8/TN8
TYN
TS8/TN8
tp(ms)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.1
1.0
10.0
50.0 ITM(A)
Tj max.:
Vto = 0.85V
Rd = 46m
Tj = Tj max.
Tj = 25°C
VTM(V) 02468101214161820
0
20
40
60
80
100 Rth(j-a) (°C/W)
S(cm2)
TN8, TS8 and TYNx08 Series
7/9
PACKAGE MECHANICAL DATA
DPAK (Plastic)
REF.
DIMENSIONS
Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
R 0.2 typ. 0.007 typ.
V2
R
R
FOOTPRINT DIMENSIONS (in milli meters )
DPAK (Plastic)
6.7
6.7
3
3
1.61.6
2.32.3
TN8, TS8 and TYNx08 Series
8/9
PACKAGE MECHANICAL DATA
IPAK (Plasti c)
T O- 220AB (Plast ic - with notches)
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.035
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
V1 10° 10°
HLL1
G
B5
B
V1
D
C
A1
A3
A
C2
B3
B6
L2
E
B2
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2 F2
F1
E
M
TN8, TS8 and TYNx08 Series
9/9
PACKAGE MECHANICAL DATA
TO-220A B (Withou t notches )
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
ec1
Inf orm atio n furnis hed is believed to be ac curate an d rel i able. However, STMi croele ct ronic s as sumes no responsi bility for the cons equen ces
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by i m pl i cation or otherwi se under a ny patent or patent rights of STMi croel ectronics. Spec i fications mentioned in this publ i cation ar e subj ect
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
au th ori zed for use as cri t i cal compone nts in lif e support devi ces or sy stem s without express written appr oval of STM i cro el ectroni cs .
© The ST logo is a re gi stered trademark of ST M i croel ectronics
© 2002 STM i cr oelect ronic s - Printed i n It aly - Al l Ri ghts Res erved
STMicroelect ro n i cs GRO UP OF COM PANI E S
Australi a - Brazil - Canada - Chi na - Fi nl and - France - Germany
Hong Kong - Ind i a - Is real - I taly - Japan - Mal aysi a - M al ta - Mor occo - Singapore
Spain - Sweden - Switzerland - Uni ted Kingdom - Uni ted St ates.
http://www.st.com