SB02W03CH
No.8060-1/3
Applications
•High frequency rectification (switching regulators, converters, choppers).
Features
•Low forward voltage (VF max=0.55V).
•Fast reverse recorvery time (trr max=10ns).
•Low switching noise.
•Low leakage current and high reliability due to highly reliable planar structure.
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V
Average Output Current IO200 mA
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 2 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C (Value per element)
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=50μA30V
Forward Voltage VFIF=200mA 0.55 V
Reverse Current IRVR=15V 15 μA
Interterminal Capacitance C VR=10V, f=1MHz 7.1 pF
Marking : SE Continued on next page.
www.semiconductor-sanyo.com/network
Ordering number : EN8060A
92408 TI IM / 21505SB TS IM TB-00000608
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
SB02W03CH Schottky Barrier Diode (Twin Type • Cathode Common)
30V, 200mA Rectifier
SB02W03CH
No.8060-2/3
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Recovery Time trr IF=IR=10mA, See specified Test Circuit. 10 ns
Thermal Resistance Rth(j-a)
When mounted on ceramic substrate (250mm
2
✕0.8mm)
280 °C / W
Package Dimensions Electrical Connection
unit : mm (typ)
7015A-002
trr Test Circuit
IR -- VR
IF -- VF
Forward Voltage, VF -- V
Forward Current, IF -- mA
Reverse Voltage, VR -- V
Reverse Current, IR -- μA
0
10
1.0
0.3 0.40.1 0.2
7
5
3
2
7
5
3
2
100
7
5
3
2
7
5
3
2
0.70.5 0.6
Ta=125°C
100°C
75°C
50
°
C
25°C
IT06871 IT06872
0
1.0
0.1
2
5
3
7
2
5
3
7
2
5
3
7
2
5
3
7
2
5
3
7
10
100
1000
10 20 3051525
Ta=125°C
25
°
C
50
°
C
75
°
C
100
°
C
3
12
1 : Anode
2 : Anode
3 : Cathode
Top view
1 : Anode
2 : Anode
3 : Cathode
SANYO : CPH3
2.9
0.05
0.4
2.8
1.6
0.2
0.6 0.6
0.9
0.2
0.15
21
3
0.95
Duty
≤
10%
50Ω100Ω10Ω
--5V trr
10μs
10mA10mA
1mA
SB02W03CH
No.8060-3/3
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
70.01 23 7
0.1
052 2337
1.0
5
2.4
2.8
1.6
0.8
2.0
1.2
0.4
IT00287
IFSM -- t
Time, t -- s
Surge Forward Current, IFSM(Peak) -- A
IS
20ms
t
Current waveform 50Hz sine wave
C -- VR
PF(AV) -- IO
Average Forward Current, IO -- A
Average Forward Power Dissipation, PF(AV) -- W
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
IT06873 IT06874
180°
360°
θ
360°
0
00.2
0.4
0.2
0.3
0.1
0.4 0.6 0.90.80.1 0.3 0.5 0.7
(1) (2) (4) (3)
Rectangular
wave
Sine wave
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.1 1.0 10
2
2
3
2
3
5
5
10
7
35 57235723
f=1MHz
This catalog provides information as of September, 2008. Specifications and information herein are subject
to change without notice.
