D TO-247 G S POWER MOS IV (R) APT5025BN 500V 23.0A 0.25 APT5030BN 500V 21.0A 0.30 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT 5025BN APT 5030BN UNIT 500 500 Volts 23 21 92 84 Continuous Drain Current @ TC = 25C Amps 1 IDM Pulsed Drain Current VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25C 310 Watts Linear Derating Factor 2.48 W/C PD TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current APT5025BN 500 APT5030BN 500 APT5025BN 23 APT5030BN 21 TYP MAX UNIT Volts 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance MIN 2 Amps APT5025BN 0.25 APT5030BN 0.30 Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 THERMAL CHARACTERISTICS Characteristic RJC Junction to Case RJA Junction to Ambient MIN TYP 0.40 40 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-5007 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT5025/5030BN Characteristic MIN Test Conditions TYP MAX Ciss Input Capacitance VGS = 0V 2380 2950 Coss Output Capacitance VDS = 25V 522 730 Crss Reverse Transfer Capacitance f = 1 MHz 196 290 Qg Total Gate Charge Qgs 3 VGS = 10V 83 130 VDD = 0.5 VDSS 12.6 19 ID = ID [Cont.] @ 25C 51 76 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 14 28 VDD = 0.5 VDSS 27 55 ID = ID [Cont.] @ 25C 61 92 RG = 1.8 36 71 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions / Part Number Symbol Continuous Source Current (Body Diode) IS ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 MIN APT5025BN 23 APT5030BN 21 APT5025BN 92 APT5030BN 84 (VGS = 0V, IS = -ID [Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) 320 640 ns Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) 5.5 11 C TYP MAX UNIT SAFE OPERATING AREA CHARACTERISTICS Symbol Characteristic Test Conditions / Part Number MIN SOA1 Safe Operating Area VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. 310 SOA2 Safe Operating Area IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. 310 ILM Inductive Current Clamped APT5025BN 92 APT5030BN 84 Watts Amps 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 Note: 0.02 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5007 Rev C 1.0 0.01 0.005 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t 2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT5025/5030BN 20 10 VGS=10V 16 ID, DRAIN CURRENT (AMPERES) 6V 12 5.5V 8 5V 4 5.5V 6V 8 6 5V 4 4.5V 2 4.5V 4V 4V 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 15 TJ = +125C 10 5 TJ = +125C TJ = +25C TJ = -55C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 24 20 APT5025BN 16 APT5030BN 12 8 4 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = +25C 2.5 2.50 TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.] 2.00 GS 1.50 VGS=10V VGS=20V 1.00 0.50 D 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = -55C 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 20 0 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5007 Rev C ID, DRAIN CURRENT (AMPERES) VGS=10V APT5025/5030BN 100 APT5025BN 10,000 10S OPERATION HERE LIMITED BY RDS (ON) 5,000 Ciss 100S APT5025BN C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) APT5030BN APT5030BN 10 1mS 10mS 100mS 1 TC =+25C TJ =+150C SINGLE PULSE DC Coss 500 Crss 100 50 APT5025/5030BN .1 10 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1,000 I = I [Cont.] D D VDS=100V VDS=250V 16 12 VDS=400V 8 4 0 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 50 TJ =+150C TJ =+25C 20 10 5 2 1 0 0.5 1.0 1.5 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247AD Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain 050-5007 Rev C Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches)