©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA ® Diodes)
Revision: 10/17/18
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SM05 through SM36
AQ15 Electrical Characteristics (TOP=25ºC)
AQ24 Electrical Characteristics (TOP=25ºC)
AQ36 Electrical Characteristics (TOP=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR=1μA 15.0 V
Breakdown Voltage VBR IR=1mA 16.7 18.5 V
Reverse Leakage Current ILEAK VR=15V 1. 0 μA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 20.5 24.0 V
IPP=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 26.6 30.0 V
Dynamic Resistance2RDYN TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 0.30 Ω
Peak Pulse Current1IPP tp=8/20µs 15 A
ESD Withstand Voltage1VESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance1CI/O-GND Reverse Bias=0V, f=1MHz 85 100 pF
CI/O-I/O Reverse Bias=0V, f=1MHz 45 75 pF
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR=1μA 24.0 V
Breakdown Voltage VBR IR=1mA 26.7 28 V
Reverse Leakage Current ILEAK VR=24V 1.0 μA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 30.0 36.0 V
IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 36.0 42.0 V
Dynamic Resistance2RDYN TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 0.50 Ω
Peak Pulse Current1IPP tp=8/20µs 9 A
ESD Withstand Voltage1VESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance1CI/O-GND Reverse Bias=0V, f=1MHz 60 65 pF
CI/O-I/O Reverse Bias=0V, f=1MHz 30 50 pF
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR=1μA 36.0 V
Breakdown Voltage VBR IR=1mA 40.0 41.8 V
Reverse Leakage Current ILEAK VR=36V 1.0 μA
Clamp Voltage1VC
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 45.0 52.0 V
IPP=5A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 58.5 62.0 V
Dynamic Resistance2RDYN TLP, tp=100ns, Pin 1 or Pin 2 to Pin 3 0.65 Ω
Peak Pulse Current1IPP tp=8/20µs 7 A
ESD Withstand Voltage1VESD
IEC 61000-4-2 (Contact Discharge) ±30 kV
IEC 61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance1CI/O-GND Reverse Bias=0V, f=1MHz 45 50 pF
CI/O-I/O Reverse Bias=0V, f=1MHz 25 40 pF
Note:
1 Parameter is guaranteed by design and/or component characterization.
2 Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns
AQxx-02HTG Series