NTZD3154N Small Signal MOSFET 20 V, 540 mA, Dual N-Channel Features * * * * * Low RDS(on) Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm ESD Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS ID Max (Note 1) 400 mW @ 4.5 V 500 mW @ 2.5 V 20 540 mA 700 mW @ 1.8 V Applications * * * * RDS(on) Typ D1 Load/Power Switches Power Supply Converter Circuits Battery Management Cell Phones, Digital Cameras, PDAs, Pagers, etc. D2 G1 G2 N-Channel MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGS 7.0 V 540 mA Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25C TA = 85C Steady State Continuous Drain Current (Note 1) tv5s Power Dissipation (Note 1) TA = 25C TA = 85C ID PD ID 390 250 mW 570 mA PD 280 mW tp = 10 ms IDM 1.5 A TJ, TSTG -55 to 150 C Source Current (Body Diode) IS 350 mA Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Operating Junction and Storage Temperature S2 MARKING DIAGRAM 6 TV M G G 1 SOT-563-6 CASE 463A TV M G 410 tv5s Pulsed Drain Current S1 = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) PINOUT: SOT-563 S1 1 6 D1 G1 2 5 G2 3 4 S2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 5 s (Note 1) Symbol Max Unit 500 C/W RqJA Top View 447 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). (c) Semiconductor Components Industries, LLC, 2014 December, 2014 - Rev. 3 D2 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: NTZD3154N/D NTZD3154N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted.) Parameter Symbol Test Condition Min Typ Max Unit V(BR)DSS VGS = 0 V, ID = 250 mA 20 - - V V(BR)DSS/TJ - - 14 - mV/C TJ = 25C - - 1.0 mA TJ = 125C - - 5.0 - "5.0 OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V VDS = 16 V IGSS VDS = 0 V, VGS = "4.5 V - VGS(TH) VGS = VDS, ID = 250 mA 0.45 - 1.0 V VGS(TH)/TJ - - 2.0 - mV/C VGS = 4.5 V, ID = 540 mA - 0.4 0.55 W VGS = 2.5 V, ID = 500 mA - 0.5 0.7 VGS = 1.8 V, ID = 350 mA - 0.7 0.9 VDS = 10 V, ID = 540 mA - 1.0 - S - 80 150 pF - 13 25 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS - 10 20 Total Gate Charge QG(TOT) - 1.5 2.5 Threshold Gate Charge QG(TH) - 0.1 - - 0.2 - - 0.35 - - 6.0 - - 4.0 - - 16 - - 8.0 - TJ = 25C - 0.7 1.2 TJ = 125C - 0.6 - VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA - 6.5 - Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1.0 MHz, VDS = 16 V VGS = 4.5 V, VDS = 10 V; ID = 540 mA nC SWITCHING CHARACTERISTICS, VGS = V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 4.5 V, VDD = 10 V, ID = 540 mA, RG = 10 W tf ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 350 mA VSD Reverse Recovery Time tRR V ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface-mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTZD3154N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.2 1.8 5.5 V VGS = 1.6 V VGS = 2.0 V to 2.2 V 0.6 VGS = 1.4 V 0.4 0.2 VGS = 1.2 V 0 0 RDS(on), DRAIN-TO-SOURCE CURRENT RESISTANCE (W) ID, DRAIN CURRENT (A) 1.8 V 0.8 2 3 4 5 6 TJ = -55C 1.4 TJ = 100C 1.2 1.0 0.8 0.6 0.4 TJ = 25C 0.2 VGS = 1.0 V 1 VDS w 10 V 1.6 7 8 9 0 0.5 10 1.5 2.0 2.5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 3.0 0.9 1.0 ID = 0.54 A TJ = 25C 0.9 0.8 0.7 0.6 0.5 0.4 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25C 0.8 VGS = 1.8 V 0.7 0.6 VGS = 2.5 V 0.5 VGS = 4.5 V 0.4 0.3 0.2 0.3 1 6 Figure 3. On-Resistance versus Gate-to-Source Voltage 0.4 1 1.2 1000 VGS = 0 V IDSS, LEAKAGE (nA) ID = 0.54 A VGS = 4.5 V 1.8 1.6 1.4 1.2 1 TJ = 150C 100 TJ = 100C 0.8 0.6 -50 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4. On-Resistance versus Drain Current and Gate Voltage 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.0 TJ = 25C 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage www.onsemi.com 3 20 NTZD3154N TJ = 25C VGS = 0 V 150 CRSS 100 CISS 50 COSS VDS = 0 V 0 5 VGS 0 5 VDS 10 15 5 VDS 4 16 VGS 12 3 8 2 QGS QGD 1 0 20 4 ID = 0.54 A TJ = 25C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0.6 100 IS, SOURCE CURRENT (A) VDS = 10 V ID = 0.2 A VGS = 4.5 V t, TIME (ns) 20 QT VDS, DRAIN-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 200 VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) td(OFF ) 10 tf td(ON) tr 0.5 0.4 0.3 0.2 0.1 1 1 10 RG, GATE RESISTANCE (W) VGS = 0 V TJ = 25C 0 0.2 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1 Figure 10. Diode Forward Voltage versus Current ORDERING INFORMATION Device Package Shipping NTZD3154NT1G NTZD3154NT1H NTZD3154NT2G NTZD3154NT2H 4000 / Tape & Reel SOT-563 (Pb-Free) NTZD3154NT5G 8000 / Tape & Reel NTZD3154NT5H For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 NTZD3154N PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A ISSUE F D -X- 6 5 1 2 A L 4 E -Y- 3 b e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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