NTZD3154NT5G - ON SEMICONDUCTOR

December, 2014 − Rev. 3 1Publication Order Number:

NTZD3154N/D

NTZD3154N

Small Signal MOSFET

20 V, 540 mA, Dual N−Channel

Features

•Low RDS(on) Improving System Efficiency

•Low Threshold Voltage

•Small Footprint 1.6 x 1.6 mm

•ESD Protected Gate

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

•Load/Power Switches

•Power Supply Converter Circuits

•Battery Management

•Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 20 V

Gate−to−Source Voltage VGS ±7.0 V

Continuous Drain Current

(Note 1) Steady

State TA = 25°CID540 mA

TA = 85°C 390

Power Dissipation

(Note 1) Steady State PD250 mW

Continuous Drain Current

(Note 1) t v 5 s TA = 25°CID570 mA

TA = 85°C410

Power Dissipation

(Note 1) t v 5 s PD280 mW

Pulsed Drain Current tp = 10 msIDM 1.5 A

Operating Junction and Storage Temperature TJ,

TSTG −55 to

150 °C

Source Current (Body Diode) IS350 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s) TL260 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Ambient – Steady State

(Note 1) RqJA

500 °C/W

Junction−to−Ambient – t v 5 s (Note 1) 447

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu. area = 1.127 in sq [1 oz] including traces).

SOT−563−6

CASE 463A

MARKING

DIAGRAM

V(BR)DSS RDS(on) Typ ID Max (Note 1

)

20 400 mW @ 4.5 V

500 mW @ 2.5 V 540 mA

700 mW @ 1.8 V

TV M G

Top View

PINOUT: SOT−563

N−Channel

MOSFET

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

TV = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

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NTZD3154N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA20 − − V

Drain−to−Source Breakdown Voltage Tem-

perature Coefficient V(BR)DSS/TJ−− 14 − mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V

VDS = 16 VTJ = 25°C − − 1.0 mA

TJ = 125°C − − 5.0

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "4.5 V − − "5.0 mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA0.45 − 1.0 V

Negative Threshold Temperature Coefficient VGS(TH)/TJ− − 2.0 − mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 540 mA − 0.4 0.55 W

VGS = 2.5 V, ID = 500 mA − 0.5 0.7

VGS = 1.8 V, ID = 350 mA − 0.7 0.9

Forward Transconductance gFS VDS = 10 V, ID = 540 mA − 1.0 − S

CHARGES AND CAPACITANCES

Input Capacitance CISS

VGS = 0 V, f = 1.0 MHz, VDS = 16 V

− 80 150 pF

Output Capacitance COSS − 13 25

Reverse Transfer Capacitance CRSS − 10 20

Total Gate Charge QG(TOT)

VGS = 4.5 V, VDS = 10 V; ID = 540 mA

− 1.5 2.5 nC

Threshold Gate Charge QG(TH) − 0.1 −

Gate−to−Source Charge QGS − 0.2 −

Gate−to−Drain Charge QGD − 0.35 −

SWITCHING CHARACTERISTICS, VGS = V (Note 4)

T urn−On Delay Time td(ON)

VGS = 4.5 V, VDD = 10 V, ID = 540 mA,

RG = 10 W

− 6.0 − ns

Rise Time tr− 4.0 −

T urn−Off Delay Time td(OFF) − 16 −

Fall Time tf− 8.0 −

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 350 mA TJ = 25°C − 0.7 1.2 V

TJ = 125°C − 0.6 −

Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 350 mA − 6.5 − ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: pulse width v 300 ms, duty cycle v2%.

4. Switching characteristics are independent of operating junction temperatures.

NTZD3154N

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

0.2

0.4

0.6

0.8

1.0

1.2

012345678910

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

1.8 V

VGS = 1.6 V

VGS = 1.4 V

VGS = 1.2 V

VGS = 1.0 V 0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.5 1.0 1.5 2.0 2.5 3

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 2. Transfer Characteristics

VDS w 10 V

TJ = 25°C

TJ = 100°C

TJ = −55°C

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

123456

VGS, GATE−TO−SOURCE VOLTAGE (V)

DS(on)

, DRAIN−TO−SOURCE CURRENT

RESISTANCE (W)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

ID = 0.54 A

TJ = 25°C

5.5 V

VGS = 2.0 V to 2.2 V

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.2 0.4 0.6 0.8 1 1

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain Curren

and Gate Voltage

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (W)

TJ = 25°C

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

TJ = 25°C

0.6

0.8

1.2

1.4

1.6

1.8

−50 −25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

DS(on)

, DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

Figure 5. On−Resistance Variation with

Temperature

ID = 0.54 A

VGS = 4.5 V

100

1000

2 4 6 8 10121416182

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

IDSS, LEAKAGE (nA)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

TJ = 150°C

TJ = 100°C

VGS = 0 V

NTZD3154N

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

100

150

200

505101520

Figure 7. Capacitance Variation

C, CAPACITANCE (pF)

VDS = 0 V

TJ = 25°C

VGS = 0 V

CRSS CISS

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.60

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

QGD

QGS

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

Qg, TOTAL GATE CHARGE (nC)

ID = 0.54 A

TJ = 25°C

VDS

VGS

100

1 10 100

t, TIME (ns)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

RG, GATE RESISTANCE (W)

td(OFF

)

tftd(ON)

VDS = 10 V

ID = 0.2 A

VGS = 4.5 V

0.1

0.2

0.3

0.4

0.5

0.6

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

IS, SOURCE CURRENT (A)

Figure 10. Diode Forward Voltage versus

Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

VGS = 0 V

TJ = 25°C

COSS

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

VGS VDS

ORDERING INFORMATION

Device Package Shipping

NTZD3154NT1G

SOT−563

(Pb−Free)

4000 / Tape & Reel

NTZD3154NT1H

NTZD3154NT2G

NTZD3154NT2H

NTZD3154NT5G 8000 / Tape & Reel

NTZD3154NT5H

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTZD3154N

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PACKAGE DIMENSIONS

DIM MIN NOM MAX

MILLIMETERS

A0.50 0.55 0.60

b0.17 0.22 0.27

D1.50 1.60 1.70

E1.10 1.20 1.30

e0.5 BSC

L0.10 0.20 0.30

1.50 1.60 1.70

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

MIN NOM MAX

INCHES

SOT−563, 6 LEAD

CASE 463A

ISSUE F

0.08 (0.003) X

b6 5 PL

−X−

−Y−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

12 3

1.35

0.0531

0.5

0.0197

ǒmm

inchesǓ

SCALE 20:1

0.5

0.0197

1.0

0.0394

0.45

0.0177

0.3

0.0118

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.08 0.12 0.18 0.003 0.005 0.007

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

NTZD3154N/D

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