DATA SH EET
Product specification
Supersedes data of 1996 Sep 17 2002 Apr 08
DISCRETE SEMICONDUCTORS
BAX12; BAX12A
Controlled avalanche diodes
M3D176
2002 Apr 08 2
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
FEATURES
•Hermetically sealed leaded glass SOD27 (DO-35)
package
•Switching speed: max. 50 ns
•General application
•Continuous reverse voltage: max. 90 V
•Repetitive peak reverse voltage: max. 90 V
•Repetitive peak forward current: max. 800 mA
•Repetitive peak reverse current: max. 600 mA
•Capable of absorbing transients repetitively.
APPLICATIONS
•Switching of inductive loads in semi-electronic
telephone exchanges.
DESCRIPTION
TheBAX12andBAX12Aarecontrolled avalanche diodes,
fabricated in planar technology and encapsulated in the
hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO35) and
symbol.
Marking code: BAX12, BAX12A.
handbook, halfpage
MAM246
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating.
2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage note 1 −90 V
VRcontinuous reverse voltage note 1 −90 V
IFcontinuous forward current see Fig.2; note 2 −400 mA
IFRM repetitive peak forward current −800 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−55 A
t = 100 µs−15 A
t = 10 ms −9A
P
tot total power dissipation Tamb =25°C; note 2 −450 mW
IRRM repetitive peak reverse current −600 mA
ERRM repetitive peak reverse energy tp≥50 µs; f ≤20 Hz; Tj=25°C−5mJ
T
stg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
2002 Apr 08 3
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF=10mA −750 mV
IF=50mA −840 mV
IF= 100 mA −900 mV
IF= 200 mA −1V
I
F
= 400 mA −1.25 V
IRreverse current see Fig.5
VR=90V −100 nA
VR= 90 V; Tj= 150 °C−100 µA
V(BR)R reverse avalanche breakdown voltage
BAX12 IR= 1 mA 120 170 V
BAX12A IR= 0.1 mA 120 170 V
Cddiode capacitance f = 1 MHz; VR=0;
see Fig.6 −35 pF
trr reverse recovery time when switched from
IF= 30 mA to IR= 30 mA;
RL= 100 Ω; measured at
IR= 3 mA; see Fig.10
−50 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W
Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W
2002 Apr 08 4
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
GRAPHICAL DATA
handbook, halfpage
0 100 200
400
500
300
200
0
100
MBG455
Tamb (oC)
IF
(mA)
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
handbook, halfpage
012
600
0
200
400
MBG463
VF (V)
IF
(mA)
(1) (2) (3)
Fig.3 Forward current as a function of forward
voltage.
(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
handbook, full pagewidth
MBG702
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
2002 Apr 08 5
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
handbook, full pagewidth
0 100 200
10
102
104
103
105
106
107
MBG696
IR
(nA)
Tj (oC)
Fig.5 Reverse current as a function of junction temperature.
VR=90V.
Solid line: maximum values. Dotted line: typical values.
handbook, halfpage
0102030
V
R
(V)
40
Cd
(pF)
30
10
0
20
MGD003
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
MBG701
10−1110
1
10
102
103
10−2
PRRM
(W)
t (ms)
(1)
Fig.7 Maximum permissible repetitive peak
reverse power as a function of the pulse
duration.
Solid line: rectangular waveform; δ≤0.01;
Dotted line: triangular waveform; δ≤0.02;
f = 1 MHz; Tj=25°C.
(1) Limited by IRMM = 600 mA.
2002 Apr 08 6
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
handbook, halfpage
100 200
600
0
200
400
MBG698
150
(1) (4)
IR
(mA)
VR (V)
(2) (3)
Fig.8 Reverse current as a function of continuous
reverse voltage.
Reverse voltages higher than the VR ratings are allowed, provided:
(a) The transient energy ≤7.5 mJ at PRRM ≤30 W or the transient
energy ≤5 mJ at PRRM = 120 W (Tj=25°C; see Fig.7).
(b) T ≥50 ms and δ≤0.01 for a rectangular waveform or T ≥50 ms
and δ≤0.02 for a triangular waveform (see Fig.9).
With increasing temperature, the maximum permissible transient
energy must be decreased by 0.03 mJ/K.
(1) Tj=25°C; minimum values.
(2) Tj= 175 °C; minimum values.
(3) Tj=25°C; maximum values.
(4) Tj= 175 °C; maximum values.
handbook, halfpage
MBG699
VR
IR
T
time
time
t (rectangular waveform)
t
(triangular
waveform) δ = t
T
Fig.9 Peak reverse voltage and current test
pulses.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.10 Reverse recovery voltage test circuit and waveforms.
Input signal: reverse pulse rise time tr= 0.6 ns; reverse pulse duration tp= 100 ns; duty factor δ= 0.05.
Oscilloscope: rise time tr= 0.35 ns.
Circuit capacitance: C ≤1 pF (oscilloscope input capacitance + parasitic capacitance).
(1) IR= 3 mA.
2002 Apr 08 7
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD27 DO-35A24 SC-40 97-06-09
Hermetically sealed glass package; axial leaded; 2 leads SOD27
UNIT b
max.
mm 0.56
D
max. G1
max.
25.44.251.85
L
min.
DIMENSIONS (mm are the original dimensions)
G1
LD L
b
(1)
0 1 2 mm
scale
2002 Apr 08 8
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyother conditions abovethosegiven in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Apr 08 9
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
NOTES
2002 Apr 08 10
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
NOTES
2002 Apr 08 11
Philips Semiconductors Product specification
Controlled avalanche diodes BAX12; BAX12A
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
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Printed in The Netherlands 613514/03/pp12 Date of release: 2002 Apr 08 Document order number: 9397 750 09501
