Surface Mount
Monolithic Amplifier
Page 1 of 4
ISO 9001 ISO 14001 CERTIFIED
Mini-Circuits
®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com
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Product Features
• Wideband, DC to 2 GHz
• Cascadable
• Aqueous washable
• Protected under US Patent 6,943,629
Typical Applications
• Cellular
• PCN
• Instrumentation
• UHF/VHF
simplified schematic and pin description
Function Pin Number Description
RF IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen
for the frequency of operation.
RF-OUT and DC-IN 3
RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking
capacitor is necessary for proper operation. An RF choke is needed to feed DC bias
without loss of RF signal due to the bias connection, as shown in “Recommended
Application Circuit”.
GND 2,4 Connections to ground. Use via holes as shown in “Suggested Layout for PCB
Design” to reduce ground path inductance for best performance.
VAM-7+
VAM-7
GROUND
RF IN
RF-OUT and DC-IN
REV. A
M108520
VAM-7
070118
DC-2 GHz
CASE STYLE: MMM168
PRICE: $1.31 ea. QTY. (30)
+ RoHS compliant in accordance
with EU Directive (2002/95/EC)
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications.
General Description
VAM-7+ (RoHS compliant) and VAM-7 (non-RoHS compliant) are wideband amplifiers offering high dy-
namic range. They have repeatable performance from lot to lot. They are enclosed in an SOT143 style
package. They use Darlington configuration and are fabricated using InGaP HBT technology. Expected
MTBF is 800 years at 85°C case temperature.
RF-OUT & DC-IN GND
GND RF-IN
Monolithic InGaP HBT MMIC Amplifier
Page 2 of 4
ISO 9001 ISO 14001 CERTIFIED
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P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
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Electrical Specifications at 25°C and 22mA, unless noted
VAM-7+
VAM-7
Absolute Maximum Ratings
Parameter Ratings
Operating Temperature* -20°C to 85°C
Storage Temperature -55°C to 100°C
Operating Current 50mA
Power Dissipation 175mW
Input Power 13dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1Case is defined as ground leads.
*Based on typical case temperature rise 5°C above ambient.
Parameter Min. Typ. Max. Units
Frequency Range* DC 2 GHz
Gain f=0.1 GHz 13.0 dB
f=1 GHz 12.0
f=2 GHz 7.8 9.8
Input Return Loss f=DC to 2 GHz 14 dB
Output Return Loss f=DC to 2 GHz 14 dB
Output Power @ 1 dB compression f=1GHz +5.5 dBm
Output IP3 f=1 GHz +18 dBm
Noise Figure f=1 GHz 5.0 dB
Recommended Device Operating Current 22 mA
Device Operating Voltage 3.8 V
Thermal Resistance, junction-to-case1505 °C/W
*Guaranteed specification DC-2 GHz. Low frequency cut off determined by external coupling capacitors.
Monolithic InGaP HBT MMIC Amplifier
Page 3 of 4
ISO 9001 ISO 14001 CERTIFIED
Mini-Circuits®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com
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Product Marking
A07
VAM-7+
VAM-7
Recommended Application Circuit R BIAS
Vcc “1%” Res. Values (ohms)
for Optimum Biasing
7 137
8 182
9 226
10 274
11 316
12 365
13 412
14 453
15 499
Case Style: MMM168
Suggested Layout for PCB Design: PL-251
Evaluation Board: TB-415-7+
Tape & Reel: F8
Additional Detailed Technical Information
Additional information is available on our web site. To access this information enter the model number on
our web site home page.
Environmental Ratings: ENV08
Performance data, graphs, s-parameter data set (.zip file)
wide lead
VAM-7+: Plastic molded SOT143 style package, lead finish: tin/silver/nickel
VAM-7: Plastic molded SOT143 style package, lead finish: tin-lead
Monolithic InGaP HBT MMIC Amplifier
Page 4 of 4
ISO 9001 ISO 14001 CERTIFIED
Mini-Circuits®
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site
The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com
RF/IF MICROWAVE COMPONENTS
minicircuits.com
ALL
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No. Test Required Condition Standard Quantity
1 Visual Inspection Low Power Microscope
Magnification 40x
MIP-IN-0003
(MCT spec) 45 units
2 Electrical Test Room Temperature SCD
(MCL spec) 45 units
3 SAM Analysis Less than 10% growth in term of
delamination
J-Std-020C
(Jedec Standard) 45 units
4Moisture Sensitivity
Level 1
Bake at 125°C for 24 hours
Soak at 85°C/85%RH for 168 hours
Reflow 3 cycles at 260°C peak
J-Std-020C
(Jedec Standard) 45 units
Visual
Inspection Electrical Test SAM Analysis
Reflow 3 cycles,
260°C
Soak
85°C/85RH
168 hours
Bake at 125°C,
24 hours
Visual
Inspection Electrical Test SAM Analysis
Start
MSL Test Flow Chart
Human Body Model (HBM): Class 1B (500 v to < 1000 v) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 ( < 100 v) in accordance with ANSI/ESD STM 5.2 - 1999
MSL Rating
Moisture Sensitivity: MSL1 in accordance with IPC/JEDECJ-STD-020C
ESD Rating
VAM-7+
VAM-7
