© IXYS All rights reserved 1 - 2
20100916a
VTO 39
VVZ 39
IXYS reserves the right to change limits, test conditions and dimensions.
IdAV = 39 A
VRRM = 800/1200 V
Three Phase Rectifier Bridge
Features
• Package with DCB ceramic base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screw
• Space and weight savings
• Improved temperature &
power cycling capability
• Small and light weight
Symbol Conditions Maximum Ratings
IdAV
ITAVM
TC = 85°C; module
TC = 85°C (180° sine; per thyristor)
39
16
A
A
ITSM TVJ = 45°C t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
200
210
A
A
TVJ = TVJM t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
180
190
A
A
I2tTVJ = 45°C t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
200
150
A2s
A2s
TVJ = TVJM t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
160
150
A2s
A2s
(di/dt)cr TVJ = TVJM
f = 50 Hz; tp = 200 µs
repetitive; IT = 20 A 100 A/µs
VD = 2/3 VDRM
IG = 0.15 A
diG /dt = 0.15 A/µs
non repetitive;
IT = ITAVM
500 A/µs
(dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM
RGK = h, method 1 (linear voltage rise)
500 V/µs
VRGM 10 V
PGM TVJ = TVJM tp = 30 µs
IT = ITAVM tp = 300 µs
< 5
< 2.5
W
W
PGAVM 0.5 W
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL < 1 mA t = 1 s
2500
3000
V~
V~
MdMounting torque (M4) 1.5 - 2
14 - 18
Nm
lb.in.
Weight Typ. 18 g
VRSM VRRM Type
VDSM VDRM
V V
900 800 VTO 39-08ho7 VVZ 39-08ho7
1300 1200 VTO 39-12ho7 VVZ 39-12ho7
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
for resistive load at bridge output.
F
A
N
L
I
MJH
GEB
VTO 39
F
A
N
L
I
MJH
VVZ 39
Preliminary data
E72873
Pin arrangement see outlines
© IXYS All rights reserved 2 - 2
20100916a
VTO 39
VVZ 39
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Conditions Characteristic Values
ID; IRVR = VRRM; VD = VDRM TVJ = TVJM < 5 mA
VTIT = 20 A TVJ = 25°C < 1.6 V
VT0
rT
For power-loss TVJ = 125°C
calculations only
0.85
27
V
mW
VGT VD = 6 V TVJ = 25°C
TVJ = -40°C
<
<
1.5
2.5
V
V
IGT VD = 6 V TVJ = 25°C
TVJ = -40°C
<
<
25
50
mA
mA
VGD
IGD
VD = 2/3VDRM TVJ = TVJM <
<
0.2
3
V
mA
ILtp = 10 µs TVJ = 25°C
IG = 0.1 A; diG /dt = 0.1 A/µs
< 75 mA
IHVD = 6 V; RGK = h TVJ = 25°C < 50 mA
tgd VD = ½VDRM TVJ = 25°C
IG = 0.1 A; diG /dt = 0.1 A/µs
< 2 µs
RthJC
RthJH
per thyristor / diode; DC
per module
per thyristor / diode; DC
per module
1.3
0.22
1.8
0.3
K/W
K/W
K/W
K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
11.2
5
50
mm
mm
m/s2
Dimensions in mm (1 mm = 0.0394“)
VTO 39 VVZ 39
8.6 ±0.3 8.6 ±0.3
R 2.15
15.2 ±0.5
21.6 ±0.5
30.3 ±0.2
47 ±0.2
39
20.3 +0.5
- 0.2
R 0.75
1
8
A B CDE F G
H I J K L M N
5 6 7 8
1 2 3 4
8.6 ±0.3 8.6 ±0.3
R 2.15
15.2 ±0.5
18.4 ±0.5
30.3 ±0.2
47 ±0.2
39
20.3 +0.5
- 0.2
R 0.75
1
8
A B CDE F G
H I J K L M N
5 6 7 8
1 2 3 4
