Three Phase Rectifier Bridges PSD 35 IdAVM = 38 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 35/08 PSD 35/12 PSD 35/14 PSD 35/16 PSD 35/18 Symbol Test Conditions IdAVM IFSM T C = 85C, module i2 dt Md W eight 38 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 400 440 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 360 400 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 800 810 A2 s A2 s 650 670 2 A s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 1.5 15% 1.5 15% 135 Nm Nm g T VJ = T VJM VR = 0 T VJ T VJM T stg VISOL Maximum Ratings 50/60 HZ, RMS IISOL 1 mA t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 1 min t=1s Mounting torque Terminal connection torque typ. (M4) (M4) Features * Package with screw terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM Characteristic Value VF VTO rT RthJC IF = 150 A T VJ = 25C 0.3 5.0 mA mA 2.2 V 0.85 12 V m per Diode; DC current per module 4.2 0.7 K/W K/W RthJK per Diode; DC current per module 4.8 0.8 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 6.2 6.2 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net http://store.iiic.cc/ PSD 35 10 I F(OV) -----I FSM 60 A I FSM (A) TVJ=45C 50 1.6 2 As TVJ=150C 400 3 360 TVJ=45C 40 1.4 30 1.2 TVJ=150C T=150C 1 20 0 VRRM 0.8 10 1/2 VRRM IF 0 VF 10 1.5 V 1 1 VRRM 0.6 T=25C 10 Fig. 1 Forward current versus voltage drop per diode 100 [W] 2 1 0.4 0 10 1 t[ms] 10 2 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 2 3 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 80 TC PSD 35 0.55 0.3 = RTHCA [K/W] 0.8 80 85 50 90 [A] 95 100 40 105 1.3 60 DC sin.180 rec.120 rec.60 rec.30 110 30 115 120 2.3 40 DC sin.180 rec.120 rec.60 rec.30 20 PVTOT 0 130 5.3 135 140 C Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 6 K/W Z thJK Z thJC 4 2 Z th 0.01 0.1 t[s] 10 IdAV 145 150 10 IFAVM 0 30 [A] 20 125 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated http://store.iiic.cc/ 50 100 TC(C) 150 200 Fig.5 Maximum forward current at case temperature