PD - 95269 IRF7842PbF HEXFET(R) Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max : Qg (typ.) 40V 5.0m @VGS = 10V 1 8 S 2 7 S 3 6 4 5 S G 33nC A A D D D D SO-8 Top View Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 40 V VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V 20 ID @ TA = 25C 18 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 140 PD @TA = 25C Power Dissipation 2.5 PD @TA = 70C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range ID @ TA = 70C f f A 14 c W 1.6 0.02 -55 to + 150 W/C C Thermal Resistance Parameter RJL RJA g fg Junction-to-Ambient Junction-to-Drain Lead Notes through www.irf.com Typ. Max. Units --- 20 C/W --- 50 are on page 9 1 09/21/04 IRF7842PbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 40 --- --- VDSS/TJ Breakdown Voltage Temp. Coefficient --- 0.037 --- V/C Reference to 25C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance --- 4.0 5.0 m --- 4.7 5.9 V Gate Threshold Voltage 1.35 --- 2.25 V VGS(th) Gate Threshold Voltage Coefficient --- - 5.6 --- mV/C IDSS Drain-to-Source Leakage Current A IGSS gfs Qg --- --- 1.0 --- 150 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 Forward Transconductance 81 --- --- VGS = 10V, ID = 17A VGS = 4.5V, ID = 14A VGS(th) --- VGS = 0V, ID = 250A e e VDS = VGS, ID = 250A VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125C nA VGS = 20V S VDS = 20V, ID = 14A VGS = -20V Total Gate Charge --- 33 50 Qgs1 Pre-Vth Gate-to-Source Charge --- 9.6 --- Qgs2 Post-Vth Gate-to-Source Charge --- 2.8 --- Qgd Gate-to-Drain Charge --- 10 --- Qgodr --- 10.6 --- Qsw Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- 12.8 --- Qoss Output Charge --- 18 --- nC RG Gate Resistance --- 1.3 TBD td(on) Turn-On Delay Time --- 14 --- tr Rise Time --- 12 --- td(off) Turn-Off Delay Time --- 21 --- tf Fall Time --- 5.0 --- Ciss Input Capacitance --- 4500 --- Coss Output Capacitance --- 680 --- Crss Reverse Transfer Capacitance --- 310 --- VDS = 20V nC VGS = 4.5V ID = 14A VDS = 16V, VGS = 0V VDD = 20V, VGS = 4.5V e ID = 14A ns Clamped Inductive Load VGS = 0V pF VDS = 20V = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. --- Max. 50 Units mJ --- 14 A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 3.1 ISM (Body Diode) Pulsed Source Current --- --- 140 VSD (Body Diode) Diode Forward Voltage --- --- 1.0 V trr Reverse Recovery Time --- 99 150 ns Qrr Reverse Recovery Charge --- 11 17 nC 2 c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25C, IS = 14A, VGS = 0V e TJ = 25C, IF = 14A, VDD = 20V di/dt = 100A/s e www.irf.com IRF7842PbF 1000 1000 100 BOTTOM TOP 10 1 2.5V 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 100 BOTTOM 2.5V 10 60s PULSE WIDTH Tj = 150C 0.1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current () VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 100.0 T J = 150C 10.0 T J = 25C 1.0 VDS = 25V 60s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 4.0 ID = 18A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7842PbF 100000 12 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 14A C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss 1000 Coss Crss VDS= 30V VDS= 20V 10 8 6 4 2 0 100 1 10 0 100 20 40 60 80 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100.0 T J = 150C 10.0 T J = 25C 1.0 10 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.2 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7842PbF 2.4 18 VGS(th) Gate threshold Voltage (V) 16 ID , Drain Current (A) 14 12 10 8 6 4 2 2.0 ID = 250A 1.6 1.2 0.8 0.4 0 25 50 75 100 125 -75 150 -50 -25 25 50 75 100 125 150 T J , Temperature ( C ) T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature 0 Fig 10. Threshold Voltage Vs. Temperature 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 Thermal Response ( Z thJA ) 10 1 R1 R1 0.1 J 0.01 J 1 1 R2 R2 2 2 R3 R3 3 C 3 12.69 Ci= i/Ri Ci= i/Ri 44.8 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Ri (C/W) i (sec) 10.48 0.138167 26.83 1.8582 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on), Drain-to -Source On Resistance ( m) IRF7842PbF 200 EAS, Single Pulse Avalanche Energy (mJ) 16 ID = 18A 12 8 T J = 125C 4 TJ = 25C 0 2.0 4.0 6.0 8.0 10.0 ID 6.7A 7.5A BOTTOM 14A TOP 160 120 80 40 0 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 Starting T J, Junction Temperature (C) Fig 12. On-Resistance Vs. Gate Voltage Fig 13c. Maximum Avalanche Energy Vs. Drain Current 15V LD VDS L VDS DRIVER + VDD - D.U.T RG IAS VGS 20V tp + V - DD D.U.T A VGS 0.01 Pulse Width < 1s Duty Factor < 0.1% Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 13b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 14b. Switching Time Waveforms www.irf.com IRF7842PbF D.U.T Driver Gate Drive P.W. + + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 16. Gate Charge Test Circuit www.irf.com Qgs1 Qgs2 Qgd Qgodr Fig 17. Gate Charge Waveform 7 IRF7842PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 8 6 7 6 MAX MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 5 H E 0.25 [.010] 1 6X 2 3 A 4 e e1 C 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 y 0.10 [.004] 0.25 [.010] MAX K x 45 A 8X b MILLIMET ERS MIN 5 A INCHES DIM B A1 8X L 8X c 7 C A B FOOT PRINT NOT E S : 1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIME T ER 3. DIME NS IONS ARE S HOWN IN MILLIME T ERS [INCHES ]. 4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA. 5 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.15 [.006]. 6 DIME NS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEE D 0.25 [.010]. 6.46 [.255] 7 DIME NS ION IS T HE LE NGT H OF LE AD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking E XAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT E RNAT IONAL RECT IF IER LOGO XXXX F 7101 DAT E CODE (YWW) P = DE S IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER 8 www.irf.com IRF7842PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.5mH RG = 25, IAS = 14A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board R is measured at TJ approximately 90C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 www.irf.com 9