FQB11P06TM - Fairchild - Product.Network

FQB11P06 / FQI11P06

60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

Features

• -11.4A, -60V, R

DS(on)

= 0.175Ω @V

GS

= -10 V

• Low gate charge ( typical 13 nC)

• Low Crss ( typical 45 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Rating s

T

C

= 25°C unless otherwise noted

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

Symbol Parameter FQB11P06 / FQI11P06 Units

V

DSS

Drain-Source Voltage -60 V

I

D

Drain Current - Continuous (T

C

= 25°C) -11.4 A

- Continuous (T

C

= 100°C) -8.05 A

I

DM

Drain Current - Pulsed

(Note 1)

-45.6 A

V

GSS

Gate-Source Voltage ± 25 V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

160 mJ

I

AR

Avalanche Current

(Note 1)

-11.4 A

E

AR

Repetitive Avalanche Energy

(Note 1)

5.3 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

-7.0 V/ns

P

D

Power Dissipation (T

A

= 25°C) * 3.13 W

Power Dissipation (T

C

= 25°C) 53 W

- Derate above 25°C 0.35 W/°C

T

J

, T

STG

Operating and Storage Temperature Range -55 to +175 °C

T

L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

R

θJC

Thermal Resistance, Junction-to-Case -- 2.85 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient * -- 40 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

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▶

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!!

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▲

▲▲

▲

▶

▶▶

▶

!

!!

!

!!

!

!!

!

S

D

G

D

2

-PAK

FQB Series

I

2

-PAK

FQI Series

GS

D

GSD

October 2008

QFET

®

•RoHS Compliant

Rev. B6, Oct 2008

FQB11P06 / FQI11P06

Elerical Characteristics

T

C

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.44mH, I

AS

= -11.4A, V

DD

= -25V, R

G

= 25 Ω, Starting T

J

= 25°C

3. I

SD

≤ -11.4A, di/dt ≤ 300A/µs, V

DD

≤ BV

DSS,

Starting T

J

= 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= -250 µA-60 -- -- V

∆BV

DSS

/ ∆T

J

Breakdown Voltage Temperature

Coefficient I

D

= -250 µA, Referenced to 25°C -- -0.07 -- V/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= -60 V, V

GS

= 0 V -- -- -1 µA

V

DS

= -48 V, T

C

= 150°C -- -- -10 µA

I

GSSF

Gate-Body Leakage Current, Forward V

GS

= -25 V, V

DS

= 0 V -- -- -100 nA

I

GSSR

Gate-Body Leakage Current, Reverse V

GS

= 25 V, V

DS

= 0 V -- -- 100 nA

On Characteristics

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= -250 µA-2.0 -- -4.0 V

R

DS(on)

Static Drain-Source

On-Resistance V

GS

= -10 V, I

D

= -5.7 A -- 0.14 0.175 Ω

g

FS

Forward Transconductance V

DS

= -30 V, I

D

= -5.7 A

(Note 4)

-- 5.1 -- S

Dynamic Characteristics

C

iss

Input Capacitance V

DS

= -25 V, V

GS

= 0 V,

f = 1.0 MHz

-- 420 550 pF

C

oss

Output Capacitance -- 195 250 pF

C

rss

Reverse Transfer Capacitance -- 45 60 pF

Switching Characteristics

t

d(on)

Turn-On Delay Time V

DD

= -30 V, I

D

= -5.7 A,

R

G

= 25 Ω

(Note 4, 5)

-- 6.5 25 ns

t

r

Turn-On Rise Time -- 40 90 ns

t

d(off)

Turn-Off Delay Time -- 15 40 ns

t

f

Turn-Off Fall Time -- 45 100 ns

Q

g

Total Gate Charge V

DS

= -48 V, I

D

= -11.4 A,

V

GS

= -10 V

(Note 4, 5)

-- 13 17 nC

Q

gs

Gate-Source Charge -- 2.0 -- nC

Q

gd

Gate-Drain Charge -- 6.3 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -- -- -11.4 A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current -- -- -45.6 A

V

SD

Drain-Source Diode Forward Voltage V

GS

= 0 V, I

S

= -11.4 A -- -- -4.0 V

t

rr

Reverse Recovery Time V

GS

= 0 V, I

S

= -11.4 A,

dI

F

/ dt = 100 A/µs

(Note 4)

-- 83 -- ns

Q

rr

Reverse Recovery Charge -- 0.26 -- µC

FQB11P06 / FQI11P06

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

10

-1

10

0

10

1

175

℃

Notes :※

1. V

GS

= 0V

2. 250µ s Pulse Test

25

℃

-I

DR

, Reverse Drain Current [A]

-V

SD

, Source-Drain Voltage [V]

0 1020304050

0.0

0.2

0.4

0.6

0.8

Note : T

※

J = 25

℃

V

GS

= - 20V

V

GS

= - 10V

R

DS(on)

[

Ω

],

Drain-Source On-Resistance

-I

D

, Drain Current [A]

246810

10

-1

10

0

10

1

175

℃

25

℃

-55

℃

Notes :※

1. V

DS

= -30V

2. 250µ s Pulse Test

-I

D

, Drain Current [A]

-V

GS

, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top : - 15.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom : - 4.5 V

Notes :

※

1. 250µ s Pulse Test

2. T

C

= 25

℃

-I

D

, Drain Current [A]

-V

DS

, Drain-Source Voltage [V]

0 2 4 6 8 10 12 14

0

2

4

6

8

10

12

V

DS

= -30V

V

DS

= -48V

Note : I

※

D

= -11.4 A

-V

GS

, Gate-Source Voltage [V]

Q

G

, Total Gate Charge [nC]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss

= C

gs

+ C

gd

(C

ds

= shorted)

C

oss

= C

ds

+ C

gd

C

rss

= C

gd

Notes :

※

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitance [pF]

-V

DS

, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitance Cha rac te ri st i cs Fig ure 6. Gate Ch arge Cha ra ct eri s ti cs

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egio n Ch ar act er i st ics

FQB11P06 / FQI11P06

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

Notes :

※

1 . Z

θJC

(t) = 2.85 /W M ax.

℃

2 . D uty F acto r, D = t

1

/t

2

3 . T

JM

- T

C

= P

DM

* Z

θJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z

θJC

(t), Thermal Response

t

1

, S quare W ave P ulse D u ration [sec]

25 50 75 100 125 150 175

0

2

4

6

8

10

12

-I

D

, Drain Current [A]

T

C

, Case Temperature [ ]

℃

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100

µ

s

Operation in This Area

is Limited by R

DS(on)

Notes :

※

1. T

C

= 25

o

C

2. T

J

= 175

o

C

3. Single Pulse

-I

D

, Drain Current [A]

-V

DS

, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

Notes :

※

1. V

GS

= -10 V

2. I

D

= -5.7 A

R

DS(ON)

, (Normalized)

Drain-Source On-Resistance

T

J

, Junction Temperature [

o

C]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :

※

1. V

GS

= 0 V

2. I

D

= -250 µ A

-BV

DSS

, (Normalized)

Drain-Source Breakdown Voltage

T

J

, Junction Temperature [

o

C]

Typical Characteristics

(Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdow n Vol tage Variation

vs. Temperature Figure 8. On-Resistance Variatio n

vs. Tempera ture

Figure 11. Transient Ther m al Res pons e Cur ve

t

1

P

DM

t

2

FQB11P06 / FQI11P06

Charge

V

GS

-10V

Q

g

Q

gs

Q

gd

-3mA

V

GS

DUT

V

DS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

V

GS

-10V

Q

g

Q

gs

Q

gd

-3mA

V

GS

DUT

V

DS

300nF

50KΩ

200nF

12V

Same Type

as DUT

V

DS

V

GS 10%

90%

t

d(on)

t

r

t

on

t

off

t

d(of f )

t

f

V

DD

-10V

V

DS

R

L

DUT

R

G

V

GS

V

DS

V

GS 10%

90%

t

d(on)

t

r

t

on

t

off

t

d(of f )

t

f

V

DD

-10V

V

DS

R

L

DUT

R

G

V

GS

E

AS

=LI

AS2

----

2

1--------------------

BV

DSS

-V

DD

BV

DSS

V

DD

V

DS

BV

DSS

t

p

V

DD

I

AS

V

DS

(t)

I

D

(t)

Time

-10V DUT

R

G

L

I

D

t

p

E

AS

=LI

AS2

----

2

1

E

AS

=LI

AS2

----

2

1

----

2

1--------------------

BV

DSS

-V

DD

BV

DSS

V

DD

V

DS

BV

DSS

t

p

V

DD

I

AS

V

DS

(t)

I

D

(t)

Time

-10V DUT

R

G

LL

I

D

I

D

t

p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQB11P06 / FQI11P06

Peak Diode R ecovery dv/dt Test Circuit & Waveform s

DUT

V

DS

+

_

Driver

R

GCompliment of DUT

(N-Channel)

V

GS

• dv/dt controlled by R

G

•I

SD

controlled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

I

FM

, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

GCompliment of DUT

(N-Channel)

V

GS

• dv/dt controlled by R

G

•I

SD

controlled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

I

FM

, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

FQB11P06 / FQI11P06

Dimensions in Millimeters

Mechanical Dimensions

D2 - PAK

FQB11P06 / FQI11P06

Mechanical Dimensions

Dimensions in Millimeters

I2 - PAK

FQB11P06 / FQI11P06

FQB11P06 / FQI11P06 Rev. B6 www.fairchildsemi.com

Rev. I37

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Definition of Terms

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RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

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Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

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