2011-09-30
1
SMBT2907A/MMBT2907A
1
2
3
PNP Silicon Switching Transistor
• Low collector-emitter saturation voltage
• Complementary type:
SMBT2222A / MMBT2222A (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBT2907A/MMBT2907A s2F 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 60 V
Collector-base voltage VCBO 60
Emitter-base voltage VEBO 5
Collector current IC600 mA
Base current IB100
Peak base current IBM 200
Total power dissipation
TS ≤ 77 °C
Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 220 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-09-30
2
SMBT2907A/MMBT2907A
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 60 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 60 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.01
10
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO - - 10 nA
DC current gain1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
75
100
100
100
50
-
-
-
-
-
-
-
-
300
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
-
-
-
0.4
1.6
V
Base emitter saturation voltage-1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
-
-
-
-
1.3
2.6
1Puls test: t ≤ 300µs, D = 2%
2011-09-30
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SMBT2907A/MMBT2907A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT200 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - - 8 pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - - 30
Delay time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
td- - 10 ns
Rise time
VCC = 30 V, IC = 150 mA, IB1 = 15 mA,
VBE(off) = 0.5 V
tr- - 40
Storage time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
tstg - - 80
Fall time
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15mA
tf- - 30
2011-09-30
4
SMBT2907A/MMBT2907A
Test circuit
Delay and rise time
EHN00053
200
-30
Ω
V
Osc.
< 5 ns
t
r
ns200
= 50
< 2ns
Input
r
Z
t
0Ω
0
-16 V
1Ωk
50 Ω
Storage and fall time
EHN00069
200
-30
-30
0
+15 V
1Ω
Ω
k
V
V
< 2 ns
= 50
Input
tZ
r0Ω
200 ns
1Ωk
50 Ω
Osc.
< 5 ns
tr
Oscillograph: R > 100, C < 12pF, tr < 5ns
2011-09-30
5
SMBT2907A/MMBT2907A
DC current gain hFE = ƒ(IC)
VCE = 5 V
EHP00754SMBT 2907/A
10
10 mA
h
C
10
5
FE
10
3
2
10
1
5
10 10 10
-1 0 1 2 3
Ι
-50 ˚C
25 ˚C
150 ˚C
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00750SMBT 2907/A
10
0V
BE sat
C
10
3
1
10
-1
5
10
0
5
Ι
V
mA
0.2 0.4 0.6 0.8 1.0 1.2 1.6
CE sat
V,
5
10
2
V
BE
V
CE
10
-2
Transition frequency fT = ƒ(IC)
VCE = 5 V
EHP00749SMBT 2907/A
10
MHz
10 10 mA
f
C
10
5
10
T
555
Ι
0123
10
3
2
10
1
5
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB0(VEB
0
2
4
6
8
10
12
14
16
18
20
22
24
26
pF
30
CCB0(CEB0)
CCB
CEB
2011-09-30
6
SMBT2907A/MMBT2907A
Collector-base capacitance CCB= ƒ (VCB)
f = 1MHz
EHP00747SMBT 2907/A
10
pF
10 10 V
C
CB
10
5
10
cb
555
-1 0 1 2
10
2
1
10
0
5
V
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00748SMBT 2907/A
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
P
DC
P
p
t
tp
=
DT
tp
T
Delay time td = ƒ(IC)
Rise time tr = ƒ(IC)
EHP00751SMBT 2907/A
10
10 mA
t
C
5
r
10
3
2
10
1
5
10 10
01 2
Ι
5 5
ns
BE
V
t
d
,
= 0 V
3
10
5
t
d
t
r
, = 10 V
CC
V,
CC
= 20 V
BE
VV, = 30 V
2011-09-30
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SMBT2907A/MMBT2907A
Storage time tstg = ƒ(IC)
EHP00752SMBT 2907/A
10
10 mA
t
C
5
stg
10
3
2
101
5
10 10
01 2
Ι
5 5
ns
FE
h= 10
3
10
5
FE = 20
h
Fall time tf = ƒ(IC)
EHP00753SMBT 2907/A
10
10 mA
t
C
5
f
10
3
2
101
5
10 10
01 2
Ι
5 5
ns
FE
h= 10
3
10
5
FE = 20h
VCC = 30 V
2011-09-30
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SMBT2907A/MMBT2907A
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-09-30
9
SMBT2907A/MMBT2907A
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
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intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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