1Nov-24-1997
BSM 100 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type VCE ICPackage Ordering Code
BSM 100 GAL 120 DN2 1200V150AHALF BRIDGE GAL 2 C67076-A2012-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE = 20 kΩVCGR 1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
100
150 A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
200
300
Power dissipation per IGBT
TC = 25 °C Ptot 800 W
Chip temperature Tj+ 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ≤ 0.16 K/W
Diode thermal resistance, chip case RthJCD≤ 0.3
Diode thermal resistance, chip-case,chopper RTHJCDC ≤ 0.25
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 -F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
http://store.iiic.cc/
2Nov-24-1997
BSM 100 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 4 mA VGE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
VGE = 15 V, IC = 100 A, Tj = 25 °C
VGE = 15 V, IC = 100 A, Tj = 125 °C
VCE(sat)
-
- 3.1
2.5 3.7
3
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
- 6
1.5 -
2 mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V IGES - - 400 nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 100 A gfs 54 --S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 6.5 -nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 1 -
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 0.5 -
http://store.iiic.cc/
3Nov-24-1997
BSM 100 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω
td(on)
- 130 260
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω
tr
- 80 160
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω
td(off)
- 400 600
Fall time
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω
tf
- 70 100
Free-Wheel Diode
Diode forward voltage
IF = 100 A, VGE = 0 V, Tj = 25 °C
IF = 100 A, VGE = 0 V, Tj = 125 °C
VF
-
- 1.8
2 -
2.5 V
Reverse recovery time
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs, Tj = 125 °C
trr
- 0.3 -
µs
Reverse recovery charge
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
- 14
4 -
-
µC
http://store.iiic.cc/
4Nov-24-1997
BSM 100 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Chopper Diode
Chopper diode forward voltage
IFC = 150 A, VGE = 0 V, Tj = 25 °C
IFC = 150 A, VGE = 0 V, Tj = 125 °C
VFC
-
- 1.8
2 -
2.5 V
Reverse recovery time, chopper
IFC = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs, Tj = 125 °C
trrC
- 0.4 -
µs
Reverse recovery charge, chopper
IFC = 150 A, VR = -600 V, VGE = 0 V
diF/dt = -1500 A/µs
Tj = 25 °C
Tj = 125 °C
QrrC
-
- 18
5 -
-
µC
http://store.iiic.cc/
GAL type
GAR type
PIN 6 and 7
GAL type
only
PIN 4 and 5
GAR type
only
IGBT-Module
IGBT-Modules %60*$/'1%60*$5'1
Gehäusemaße / Schaltbild
Package outline / Circuit diagram
Update of Drawing S ep-21- 98
http://store.iiic.cc/
