2SJ634
Rev.0 I Page 1 of 4 I www.onsemi.com
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
•DC / DC Converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID--8 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --32 A
Allowable Power Dissipation PD1W
Tc=25°C20W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --60 V
Zero-Gate Voltage Drain Current IDSS VDS=--60V, VGS=0V --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--4A 4 7 S
RDS(on)1 ID=--4A, VGS=--10V 105 138 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--4A, VGS=--4V 145 205 mΩ
Input Capacitance Ciss VDS=--20V, f=1MHz 990 pF
Output Capacitance Coss VDS=--20V, f=1MHz 110 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 76 pF
Continued on next page.
Ordering number : ENN8276
2SJ634 P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
2SJ634/D
2SJ634
Rev.0 I Page 2 of 4 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise T ime trSee specified Test Circuit. 85 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 95 ns
Fall T ime tfSee specified Test Circuit. 80 ns
Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--8A 22 nC
Gate-to-Source Charge Qgs VDS=--30V, VGS=--10V, ID=--8A 4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--8A 4 nC
Diode Forward Voltage VSD IS=--8A, VGS=0V --0.95 --1.2 V
Package Dimensions Package Dimensions
unit : mm unit : mm
7518-004 7003-004
Switching Time Test Circuit
6.5
5.0 2.3 0.5
12
4
3
0.85
0.7 1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8 5.5 1.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
PW=10µs
D.C.≤1%
0V
--10V
VIN
P.G 50Ω
G
S
ID= --4A
RL=7.5Ω
VDD= --30V
VOUT
2SJ634
VIN
D
6.5
5.0
2.3 0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SJ634
Rev.0 I Page 3 of 4 I www.onsemi.com
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Case Temperature, Tc -- °C
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
IT09414 IT09415
0--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--2
--4
--1
--3
--5
--6
--7
--8
0
--1
--4
--3
--2
--5
--6
--7
--8
0--1--2--3 --4 --5
VGS= --2.5V
--3.0V
--4.0V
--5.0V
--7.0V
--16.0V
VDS= --10V
25°C
25°C
75°C
--25
°
C
Tc=75
°
C
Tc=
--25
°
C
--10.0V
--60 --40 --20 0 20 40 60 80 100 120 140 160
50
100
150
200
250
300
0
50
150
100
200
250
300
0--2--4--6 --8 --10 --12 --14 --16
IT09416 IT09417
Tc=25°C
ID= --4A
ID= --4A, VGS= --4V
ID= --4A, VGS= --10V
Drain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
SW Time -- ID
IS -- VSD
yfs -- ID
3
7
1000
100
5
3
2
7
5
3
2
10
3
100
7
5
2
3
2
0--60--20 --30 --40 --50--10
IT09421
IT09419
IT09418
--1.5--1.0--0.50
--0.01
--0.1
5
7
3
2
5
7
3
2
5
7
3
2
--1.0
--10
0.1
3
10
1.0
7
5
2
3
7
5
2
--0.1 --1.0 --10--0.01 23 57 23 57 23 57
Tc= --25°C
75
°
C
25
°
C
VDS= --10V
Tc=
75
°
C
25
°
C
--
25
°
C
VGS=0V
f=1MHz
Coss
Ciss
Crss
IT09420
--10--0.1 23 5723 57
--1.0
td(off)
tf
td(on)
tr
VDD= --30V
VGS= --10V
2SJ634
Rev.0 I Page 4 of 4 I www.onsemi.com
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
A S O
VGS -- Qg
PD -- Ta
3
--1.0
--0.1
7
5
2
3
7
5
2
3
5
2
--10
7
23 5 23 57
--100--0.1 23 57
--1.0 7--10 IT09423
IT09422
0246810 222012 16 1814
0
--2
--4
--6
--8
--9
--1
--3
--5
--7
--10
VDS= --30V
ID= --8A IDP= --32A
ID= --8A
100
µ
s
1ms
10ms
DC operation
≤10µs
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
IT09424
0
020 40 60 80 100 120
25
140 160
20
15
10
5
Case Temperature, Tc -- °C
Allowable Power Dissipation, PD -- W
PD -- Tc
IT09742
0
020 40 60 80 100 120
1.2
140 160
0.8
1.0
0.6
0.4
0.2
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2SJ634/D
