DSA 30 C 60PB
tentative
Schottky
Symbol Definition R a t i n g s
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
typ. max.
I
FSM
I
R
A
mA
V
130
I
FAV
A
V
F
0.85
R
thJC
1.75 K/W
V
R
=
T
VJ
=
min.
15
ms (50 Hz), sine
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
V
RRM
V60
0.5
T
VJ
V°C=
T
VJ
°C=mA
°C
5
Package:
Part number
V
R
=
I
F
=A
V
T
C
= 150 °C
P
tot
85 W
T
C
°C=
E
A
S
0.05 mJ
T
VJ
°C
=
I
A
S
=A;L =µH
I
A
R
A
V
A
=0.1
f = 10 kHz
1.5·V
R
typ.;
T
VJ
175 °C
-55
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
V
I
V
RRM
FAV
F
=
=
=
60
15
0.68
15
T
VJ
=45°C
1 100
DSA 30 C 60PB
V
A
V
60
V60
25
25
t
p
=10
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
non-repetitive avalanche energy
repetitive avalanche current
Conditions Unit
0.68
T
VJ
°C
=25
C
J
tbd pF
j
unction capacitance V
R
=V; f = 1 MHz
tbd T
VJ
=°C
125
125
I
F
=A30 T
VJ
=°C
25 V
0.95
I
F
=A15
I
F
=A30 V0.78
V
F0
V
0.44
T
VJ
=175°C
r
F
11.2
m
TO-220AB
threshold voltage
slope resistance for power loss calculation only
25
rectangular, d = 0.5
2x
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
Backside: cathode
IXYS reserves the right to change limits, conditions and dimensi
© 2006 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/
DSA 30 C 60PB
tentative
I
RMS
A
per pin* 35
R
thCH
K/W
0.50
M
D
Nm0.6
mounting torque 0.4
T
st
°C
150
storage temperature -55
Weight g
2
C
B
F
A
H
G
L
K
J
D
N
M
E
R
Q
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
Symbol Definition Ratings
typ. max.min.
Conditions
RMS current
thermal resistance case to heatsink
Unit
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-220AB
F
C
N
60
mounting force with clip 20
IXYS reserves the right to change limits, conditions and dimensi
© 2006 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/