VBUS051CD-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 05-Jun-12 1Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Capacitance, Single-Line ESD-Protection Diode
MARKING (example only)
Bar = cathode marking
X = date code
Y = type code (see table below)
FEATURES
• Ultra compact LLP1006-2L package
• Low package height < 0.4 mm
• 1-line ESD-protection
• Low leakage current < 0.1 μA
• Low load capacitance CD = 0.6 pF
• ESD-protection to IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
• High surge current acc. IEC 61000-4-5 IPP > 2 A
• Soldering can be checked by standard vision inspection.
No X-ray necessary
• Pin plating NiPdAu (e4) no whisker growth
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
20855
20856
21
21121
XY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL
(8 MM TAPE ON 7" REEL) MINIMUM ORDER QUANTITY
VBUS051CD-HD1 VBUS051CD-HD1-G-08 8000 8000
PACKAGE DATA
DEVICE NAME PACKAGE
NAME
TYPE
CODE WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VBUS051CD-HD1 LLP1006-2L T 0.72 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current Acc. IEC 61000-4-5; tp = 8/20 μs; single shot IPPM 2A
Peak pulse power Acc. IEC 61000-4-5; tp = 8/20 μs; single shot PPP 28 W
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 15 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 15 kV
Operating temperature Junction temperature TJ- 40 to + 125 °C
Storage temperature TSTG - 40 to + 150 °C
VBUS051CD-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 05-Jun-12 2Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
The VBUS051CD-HD1 is an ESD-protection device with the characteristic of a Z-diode with a high ESD-immunity and a very
low capacitance which makes it usable for high frequency applications like USB2.0 or HDMI.
With the VBUS051CD-HD1 one high speed data line can be protected against transient voltage signals like ESD (Electro Static
Discharge). Connected to the data line (pin 2) and to ground (pin 1) negative transients will be clamped close below the ground
level while positive transients will be clamped clos above the 5.5 V working range. The clamping behaviour of the
VBUS051CD-HD1 is bidirectional but asymmetrical (BiAs) and so it offers the best protection for applications running up to 5 V.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of line which can be protected Nchannel --1lines
Reverse stand-off voltage Max. reverse working voltage VRWM --5.5V
Reverse voltage at IR = 1 μA
pin 2 to pin 1 VR5.5 - - V
Reverse current at VR = VRWM = 5.5 V;
pin 2 to pin 1 IR- < 0.01 0.1 μA
Reverse breakdown voltage at IR = 1 mA
pin 2 to pin 1 VBR 6.5 7.6 8.5 V
Reverse clamping voltage at IPP = 2 A; acc. IEC 61000-4-5
pin 2 to pin 1 VC--14V
Forward clamping voltage at IF = 2 A; acc. IEC 61000-4-5
pin 1 to pin 2 VF--3.5V
Capacitance at VR = 0 V; f = 1 MHz
pin 2 to pin 1 CD-0.60.8pF
0 %
20 %
40 %
60 %
80 %
100 %
120 %
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
Discharge Current IESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
VBUS051CD-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 05-Jun-12 3Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
V
R
(V)
C
D
(pF)
21894
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
01234
f = 1 MHz
VF (V)
IF (mA)
21895
10-6
10-5
10-4
10-3
10-2
10-1
101
102
1
0.4 0.6 0.8 1 1.2
IR (µA)
VR (V)
21896
0
1
2
3
4
5
6
7
8
9
0.01 0.1 1 10 100 1000 10 000
IPP (A)
VC (V)
21897
- 4
- 2
0
2
4
6
8
10
12
14
16
0123
Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)
VC
positive surge
negative surge
t (ns)
V
C-ESD
(V)
21898
- 20
0
20
40
60
80
100
- 10 0 10 20 30 40 50 60 70 80 90
acc. IEC 61000-4-2
+ 8 kV
contact discharge
VBUS051CD-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 05-Jun-12 4Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
PACKAGE DIMENSIONS in millimeters (inches): LLP1006-2L
21900
VC-ESD (V)
VESD (kV)
- 200
- 150
- 100
- 50
0
50
100
150
200
0 5 10 15 20
VC-ESD
acc. IEC 61000-4-2
contact discharge
20812
Document no.:S8-V-3906.04-005 (4)
Rev. 5 - Date: 21 April 2010
Created - Date: 13. July. 2007
Foot print recommendation:
solder
resist mask
solder pad
0.55 [0.022]
0.45 [0.018]
0.25 [0.010]
0.15 [0.006]
0.45 [0.018]
0.35 [0.014]
0.3 [0.012]
0.2 [0.008]
0.4 [0.016]
0.33 [0.013]
1.05 [0.041]
0.95 [0.037]
soldermask opening ± 0.03
measured middle of the package
0.05 [0.002]
0 [0.000]
0.125 [0.005] Ref.
0.65 [0.026]
0.55 [0.022]
0.05 [0.002]
0.25 [0.010]
0.5 [0.020]
1 [0.039]
0.5 [0.020]
0.6 [0.024]
0.2 [0.008]
Orientation Identification
VBUS051CD-HD1
www.vishay.com Vishay Semiconductors
Rev. 1.2, 05-Jun-12 5Document Number: 81195
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Top view Pad layout - view from top
seen at bottom side
Pin 1
Unreeling direction
cathode mark
S8-V-3906.04-017 (4)
Rev.1, Date: 28. Jan. 2010
21999
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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