CDBFR03100-HF
SMD Schottky Barrier Diode
Page 1
QW-G1120
REV:A
Comchip Technology CO., LTD.
Io = 300 mA
RoHS Device
Halogen Free
VR = 100 Volts
Features
- Designed for mounting on small surface.
- Extremely thin/leadless package.
- Low drop-down voltage.
Mechanical data
- Case: 1005/SOD-323F standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750, method 2026
- Polarity: Indicated by cathode band.
- Weight: 0.006 grams(approx.).
- Mounting position: Any
Circuit Diagram
- Majority carrier conduction.
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005/SOD-323F
0.041(1.05)
0.037(0.95)
0.024(0.60)
0.016(0.40)
Maximum Rating (at TA=25°C unless otherwise noted)
Symbol Typ
Parameter Conditions Min
Max
Unit
Electrical Characteristics (at TA=25°C unless otherwise noted)
25
CT
Capacitance between terminals pF
f = 1MHz, VR = 1V
Forward voltage IF = 300mA VFV
0.82
IRµA
Reverse current VR = 100V 50
VRRM
Max. Repetitive peak reverse voltage
Symbol
Parameter Conditions Unit
V
100
VR
Max. Reverse voltage V
100
IFSM
Max. Forward surge current 3
PDmW
°C
200
-55 to +150
Power dissipation
Storage temperature range
Tj°C
-40 to +150
Junction temperature range
TSTG
A
IO
Max. Average forward current mA
300
Company reserves the right to improve product design , functions and reliability without notice.
0.75
VRMS
Max. RMS voltage V
70
Notes: Pulse test with PW=300µsec, 1% duty cycle
Value
8.3 ms single half sine-wave
superimposed on rate load
(JEDEC method)