MCR218-4G - ON Semiconductor

November, 2005 − Rev. 4 1Publication Order Number:

MCR218/D

MCR218−2, MCR218−4,

MCR218−6

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supplies; or wherever

half-wave silicon gate-controlled, solid-state devices are needed.

Features

•Glass-Passivated Junctions

•Blocking Voltage to 400 Volts

•TO-220 Construction − Low Thermal Resistance, High Heat

Dissipation and Durability

•Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetit iv e Off−State Voltage (Note 1)

(TJ = *40 to 125°C, Gate Open)

MCR218−2

MCR218−4

MCR218−6

VDRM,

VRRM 50

200

400

On-State RMS Current

(180° Conduction Angles; TC = 70°C) IT(RMS) 8.0 A

Peak Non-repetitive Surge Current

(1/2 Cy cle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A

Circuit Fusing Considerations (t = 8.3 ms) I2t 26 A2s

Forward Peak Gate Power

(Pulse Width ≤1.0 ms, TC = 70°C) PGM 5.0 W

Forward Average Gate Power

(t = 8.3 ms, TC = 70°C) PG(AV) 0.5 W

Forward Peak Gate Current

(Pulse Width ≤1.0 ms, TC = 70°C) IGM 2.0 A

Operating Junction Temperature Range TJ−40 to +125 °C

Storage Temperature Range Tstg −40 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SCRs

8 AMPERES RMS

50 thru 400 VOLTS

Device Package Shipping

ORDERING INFORMATION

MCR218−2 TO220AB 500 Units/Bulk

MCR218−4 TO220AB

MCR218−6 TO220AB

500 Units/Bulk

TO−220AB

CASE 221A−07

STYLE 3

123

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MARKING

DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

MCR218x = Device Code

x = 2, 4 or 6

G = Pb−Free Package

AKA = Diode Polarity

MCR218−2G TO220AB

(Pb−Free) 500 Units/Bulk

MCR218−4G TO220AB

(Pb−Free) 500 Units/Bulk

MCR218−6G TO220AB

(Pb−Free) 500 Units/Bulk

Preferred devices are recommended choices for future use

and best overall value.

AY WW

MCR218x−G

AKA

MCR218−2, MCR218−4, MCR218−6

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C

TJ = 125°C

IDRM, IRRM −

−−

−10

2.0 mA

ON CHARACTERISTICS

Peak Forward On-State Voltage (Note 2)

(ITM = 16 A Peak) VTM − 1.5 1.8 V

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ohms) IGT − 10 25 mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ohms) VGT − − 1.5 V

Gate Non−Trigger Voltage

(Rated 12 V, RL = 100 Ohms, TJ = 125°C) VGD 0.2 − − V

Holding Current

(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH− 16 30 mA

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt − 100 − V/ms

2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%.

+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak On State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

MCR218−2, MCR218−4, MCR218−6

http://onsemi.com

IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (C)

105

115

125

87654321

75 α = 30°90°120°180°60°

α = CONDUCTION ANGLE

IT(AV), AVG. ON-STATE CURRENT (AMPS)

P(AV), AVERAGE ON-STATE POWER DISSIPATION

3.0

6.0

9.0

8.07.06.05.04.03.02.01.0

α = 30°

90°

120°180°

60°

α = Conduction Angle

(WATTS)

αα

Figure 1. Current Derating Figure 2. On−State Power Dissipation

4.0

2.0

0.5

0.7

10080

0.4 1406040 120−20 0−40 20

TJ, JUNCTION TEMPERATURE (°C)

−60

, NORMALIZED HOLDING CURRENT (mA)

0.9

1.0

1.5

3.0

−60 120−40 0−20 20 40 60 80 100 140

TJ, JUNCTION TEMPERATURE (°C)

0.7

0.5

0.3

, NORMALIZED GATE TRIGGER VOLTAGE

1.0

0.4

0.9

1.3

1.2

VD = 12 Vdc

−60 120−40 0−20 20 40 60 80 100 140

TJ, JUNCTION TEMPERATURE (°C)

0.7

0.5

0.3

, NORMALIZED GATE TRIGGER CURRENT (mA)

1.0

0.4

0.9

3.0

2.0

1.5

VD = 12 Vdc

Figure 3. Typical Gate Trigger Current

versus Temperature Figure 4. Typical Gate Trigger Voltage

versus Temperature

Figure 5. Typical Holding Current

versus Temperature

MCR218−2, MCR218−4, MCR218−6

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PACKAGE DIMENSIONS

TO−220AB

CASE 221A−07

ISSUE AA

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 −−− 1.15 −−−

Z−−− 0.080 −−− 2.04

123

−T− SEATING

PLANE

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Phone: 81−3−5773−3850

MCR218/D

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