MRF8S9220HR3 MRF8S9220HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz 19.7 35.1 6.1 -37.4
940 MHz 19.8 35.3 6.2 -37.5
960 MHz 19.4 35.7 6.1 -37.4
•Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
•Typical Pout @ 1 dB Compression Point ] 220 Watts CW
Features
•100% PAR Tested for Guaranteed Output Power Capability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
•Internally Matched for Ease of Use
•Integrated ESD Protection
•Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
•Designed for Digital Predistortion Error Correction Systems
•Optimized for Doherty Applications
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain- Source Voltage VDSS -0.5, +70 Vdc
Gate- Source Voltage VGS -6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 81‘°C, 65 W CW, 28 Vdc, IDQ = 1600 mA
Case Temperature 81°C, 220 W CW, 28 Vdc, IDQ = 1600 mA
RθJC
0.39
0.32
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S9220H
Rev. 0, 11/2009
Freescale Semiconductor
Technical Data
920- 960 MHz, 65 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S9220HR3
MRF8S9220HSR3
CASE 465A- 06, STYLE 1
NI- 780S
MRF8S9220HSR3
CASE 465- 06, STYLE 1
NI- 780
MRF8S9220HR3
Freescale Semiconductor, Inc., 2009. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 1C (Minimum)
Machine Model (per EIA/JESD22- A115) A (Minimum)
Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 µAdc)
VGS(th) 1.5 2.2 3 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q) 2.3 3.1 3.8 Vdc
Drain- Source On- Voltage
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on) 0.1 0.2 0.3 Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg., f = 960 MHz,
Single-Carrier W- CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 18.0 19.4 21.0 dB
Drain Efficiency ηD34.0 35.7 — %
Output Peak- to- Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.1 — dB
Adjacent Channel Power Ratio ACPR — -37.4 -35 dBc
Input Return Loss IRL — -13 -8 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg.,
Single-Carrier W- CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dB)
IRL
(dB)
920 MHz 19.7 35.1 6.1 -37.4 -13
940 MHz 19.8 35.3 6.2 -37.5 -24
960 MHz 19.4 35.7 6.1 -37.4 -13
1. Part internally matched both on input and output.
(continued)
MRF8S9220HR3 MRF8S9220HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 920-960 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB — 220 — W
IMD Symmetry @ 200 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
— 12 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres — 40 — MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 65 W Avg. GF— 0.3 — dB
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.017 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.016 — dBm/°C
4
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
Figure 1. MRF8S9220HR3(HSR3) Test Circuit Component Layout
*C21, C22, C23, and C24 are mounted vertically.
CUT OUT AREA
MRF8S9XXXH
Rev. 1
R3
C10
R2
C9
C8
C7 R1
C1
C2 C3 C4
C5
C6
C21*
C23*
C25 C27
C29
C19
C17
C15
C14
C13 C12
C11
C16
C18
C20
C26 C28
C22*
C24*
C30
Table 5. MRF8S9220HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C8, C11, C23, C24 39 pF Chip Capacitors ATC100B390JT500XT ATC
C2 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC
C3, C12 1.0 pF Chip Capacitors ATC100B1R0BT500XT ATC
C4, C14 1.2 pF Chip Capacitors ATC100B1R2BT500XT ATC
C5 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC
C6, C7, C21, C22 10 pF Chip Capacitors ATC100B100JT500XT ATC
C9 2.2 µF, 50 V Chip Capacitor C1825C225J5RAC-TU Kemet
C10 47 µF, 50 V Electrolytic Capacitor 476KXM050M Illinois Capacitor
C13 1.3 pF Chip Capacitor ATC100B1R3BT500XT ATC
C15, C16 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC
C17 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C18 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC
C19, C20 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C25, C26, C27, C28 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C29, C30 470 µF, 63 V Electrolytic Capacitors MCGPR63V477M13X26- RH Multicomp
R1 0 Ω, 3 A Chip Resistor CRCW12060000Z0EA Vishay
R2 3.3 Ω, 1/2 W Chip Resistor P3.3VCT-ND Panasonic
R3 2.2 kΩ, 1/4 W Chip Resistor CRCW12062K20FKEA Vishay
PCB 0.030″, εr = 3.5 RF- 35 Taconic
MRF8S9220HR3 MRF8S9220HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 65 Watts Avg.
−5
−15
16
20
−39
42
40
38
−31
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
19.6
19.2
18.4
840 860 880 900 920 940 960 980
32
−25
PARC
PARC (dB)
−3.5
−1.5
−4
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two-Tone Spacing
TWO−TONE SPACING (MHz)
10
−60
0
−20
−30
−50
1 100
IMD, INTERMODULATION DISTORTION (dBc)
−40
IM3−U
IM3−L
IM5−U
IM5−L
IM7−L
IM7−U
VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1600 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
−1
−3
−5
0
−2
−4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
30 50 130
0
60
50
40
30
20
10
ηD, DRAIN EFFICIENCY (%)
−1 dB = 59.8 W
ηD
ACPR (dBc)
−55
−25
−30
−35
−45
−40
−50
20.5
Gps, POWER GAIN (dB)
20
19
18 VDD = 28 Vdc, IDQ = 1600 mA, f = 940 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
−2 dB = 81.0 W
−3 dB = 110.1 W
0
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
70 90
ACPR
−10
110
Gps
PARC
16.4
16.8
17.2
17.6
18
18.8 36
34
−33
−35
−37
−10
−20
−3
−2.5
−2
VDD = 28 Vdc, Pout = 65 W (Avg.)
IDQ = 1600 mA, Single−Carrier
W−CDMA
19.5
18.5
17.5
6
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
TYPICAL CHARACTERISTICS
1
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
−10
15
21
0
60
50
40
30
20
ηD, DRAIN EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
10 100 300
10
−60
ACPR (dBc)
20
19
0
−20
Figure 6. Broadband Frequency Response
−5
25
600
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1600 mA
10
5
700
GAIN (dB)
20 Gain
800 900 1000 1100 1300
IRL
−25
5
0
−5
−10
−15
IRL (dB)
−20
18
17
16 −50
−40
−30
920 MHz
960 MHz
920 MHz
0
15
Gps
940 MHz
960 MHz
VDD = 28 Vdc, IDQ = 1600 mA
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability on CCDF
960 MHz
940 MHz
920 MHz
1200
940 MHz
W-CDMA TEST SIGNAL
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 7. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
−60
−100
10
(dB)
−20
−30
−40
−50
−70
−80
−90
3.84 MHz
Channel BW
7.21.8 5.43.60−1.8−3.6−5.4−9 9
f, FREQUENCY (MHz)
Figure 8. Single-Carrier W-CDMA Spectrum
−7.2
−ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
−10
0
13579
MRF8S9220HR3 MRF8S9220HSR3
7
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 65 W Avg.
f
MHz
Zsource
W
Zload
W
820 1.27 - j1.44 2.14 - j2.23
840 1.27 - j1.15 1.97 - j1.94
860 1.23 - j0.90 1.82 - j1.65
880 1.05 - j0.68 1.54 - j1.40
900 0.95 - j0.39 1.29 - j1.11
920 0.94 - j0.15 1.26 - j0.85
940 0.90 + j0.08 1.22 - j0.69
960 0.85 + j0.31 1.11 - j0.47
980 0.78 + j0.55 1.01 - j0.23
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
36
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1600 mA, Pulsed CW, 10 µsec(on), 10% Duty Cycle
56
54
52
37
57
55
49
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
53
58
60
35343329 403231
59
51
50
30 38 39
940 MHz
Ideal
Actual
920 MHz
960 MHz
940 MHz
960 MHz
920 MHz
f
P1dB P3dB
f
(MHz) Watts dBm Watts dBm
920 295 54.7 357 55.5
940 270 54.3 316 55.0
960 284 54.5 344 55.4
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
920 P1dB 0.630 - j1.26 0.791 - j1.16
940 P1dB 0.728 - j1.43 0.809 - j1.04
960 P1dB 0.886 - j1.68 0.853 - j1.28
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S9220HR3 MRF8S9220HSR3
9
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
10
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
MRF8S9220HR3 MRF8S9220HSR3
11
RF Device Data
Freescale Semiconductor
12
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
MRF8S9220HR3 MRF8S9220HSR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
•.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2009 •Initial Release of Data Sheet
14
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
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Document Number: MRF8S9220H
Rev. 0, 11/2009