2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: * High Gain: - Typically 28 dB gain across 2.4- 2.5 GHz over temperatures 0- 85C * High linear output power: - >24 dBm P1dB * High power-added efficiency/low operating current for Bluetooth applications - ~50% PAE or 115 mA total current consumption @ Pout = 23 dBm for Vcc = 3.3V and GCTL = 3.0V * Low idle current - ~10 mA ICQ * Simple input/output matching * Packages available - 6-contact VQFN and UQFN (3 x 1.6mm2) * Bluetooth * USB Dongles * 2.4 GHz Cordless phones PRODUCT DESCRIPTION The SST12LP00 is a high-power and high-gain power amplifier based on the highly reliable InGaP/GaAs HBT technology. SST12LP00 is easily configured for high-power and high-efficiency applications while operating over the 2.4- 2.5 GHz frequency band. This device typically provides 30 dB gain with better than 50% power added efficiency @ Pout = 23 dBm. The SST12LP00's excellent linearity is well suited for Class 1 Bluetooth operation. The power amplifier IC also features easy board-level usage along with high speed power up/down control. A low reference current makes SST12LP00 ideal for the final stage power amplification in battery-powered Bluetooth, USB Dongle, or cordless phone transmitter applications. The SST12LP00 is offered in both 6-contact VQFN and UQFN packages. See Figure 2 for pin assignments and Table 1 for pin descriptions. (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 04/09 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet FUNCTIONAL BLOCKS Bias/Gain Control RFOUT/VCC2 GCTL PDC VCC1 RFIN VCCb 1283 B1.1 FIGURE 1: Functional Block Diagram PIN ASSIGNMENTS Top View (contacts facing down) RFOUT/VCC2 GCTL 1 PDC 2 6 RF and DC GND 0 3 RFIN 5 VCC1 4 VCCb 1283 6-vqfn-uqfn P1.1 FIGURE 2: Pin Assignments for 6-contact VQFN and UQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol GND Pin No. 0 Pin Name Type1 Ground Function The center pad should be connected to RF ground with several low inductance, low resistance vias. GCTL 1 Power Amplifier Gain Control PDC 2 Power-down Control RFIN 3 VCCb 4 Power Supply VCC1 5 Power Supply RFOUT/VCC2 6 I PWR RF input, DC decoupled Vcc power supply, bias circuit PWR Vcc power supply, 1st stage O/PWR Vcc power supply, 2nd stage T1.1 1283 1. I=Input, O=Output (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 2 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figure 3 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 5, and 6 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V Power-down Control Voltage (PDC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC Gain Control Voltage (GCTL). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC Radio Frequency Input Power (RFIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10 dBm Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds Operating Range Range Ambient Temp VCC Industrial -40C to +85C 3.3V TABLE 2: DC Electrical Characteristics Symbol Parameter VCC Supply Voltage at pins 4, 5, and 6 ICC Supply Current @ POUT = 23 dBm GCTL Power Amplifier Gain Control Voltage IGCTL Current through GCTL pin PDC Logic High Voltage Min. 2.7 Typ Max. 3.3 3.6 115 0.1 V 3.0 3.3 V 55 100 A 2.6 V 0.8 Idle Current (GCTL = 3.0V) Test Conditions mA Logic Low Voltage ICQ Unit 10 V mA T2.3 1283 TABLE 3: AC Electrical Characteristics Symbol Parameter Min. 2402 Typ Max. Unit 2480 MHz FL-U Frequency range POUT Output power 23 dBm G Small signal gain 27 dB GVAR Gain variation over band (2400~2485 MHz) 0.2 @ PIN = -7 dBm, VCC = 3.3V, GCTL = 3.0V 0.5 dB T3.2 1283 (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 3 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 0 0 -10 -5 S12 (dB) S11 (dB) -20 -10 -15 -20 -30 -40 -50 -60 -25 -30 1.0 -70 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -80 1.0 9.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 7.0 8.0 9.0 Frequency (GHz) Frequency (GHz) 40 0 30 -5 -10 10 S22 (dB) S21 (dB) 20 0 -10 -15 -20 -20 -25 -30 -40 1.0 -30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1.0 Frequency (GHz) 2.0 3.0 4.0 5.0 6.0 Frequency (GHz) 1283 Sparm1.0 FIGURE 3: S-parameters for SST12LP00 (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 4 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet 32 31 Power Gain (dB) 30 29 28 27 26 Freq=2.402 GHz 25 Freq=2.442 GHz 24 Freq=2.480 GHz 23 22 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F3.1 Output Power (dBm) FIGURE 4: Power Gain versus Output Power 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 Freq=2.402 GHz Freq=2.442 GHz Freq=2.480 GHz -18 -17 -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 Input Power (dBm) 1283 F4.1 FIGURE 5: Output Power versus Input Power (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 5 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet 140 130 Freq=2.402 GHz Supply Current (mA) 120 Freq=2.442 GHz 110 Freq=2.480 GHz 100 90 80 70 60 50 40 30 20 10 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F5.1 FIGURE 6: Supply Current versus Output Power 58 Freq=2.402 GHz 54 Freq=2.442 GHz 50 Freq=2.480 GHz PAE (%) 46 42 38 34 30 26 22 18 14 10 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F6.1 FIGURE 7: PAE versus Output Power (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 6 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet -20 -22 -24 2nd Harmonic (dBc) -26 -28 -30 -32 -34 -36 -38 Freq=2.402 GHz -40 Freq=2.442 GHz -42 -44 Freq=2.480 GHz -46 -48 -50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F7.1 FIGURE 8: 2nd Harmonic versus Output Power -30 Freq=2.402 GHz -34 Freq=2.442 GHz 3rd Harmonic (dBc) -38 Freq=2.480 GHz -42 -46 -50 -54 -58 -62 -66 -70 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F8.1 FIGURE 9: 3rd Harmonic versus Output Power (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 7 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet -30 Freq=2.402 GHz -34 Freq=2.442 GHz 4th Harmonic (d Bc) -38 Freq=2.480 GHz -42 -46 -50 -54 -58 -62 -66 -70 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F9.1 FIGURE 10: 4th Harmonic versus Output Power -30 Freq=2.402 GHz -34 Freq=2.442 GHz 5th Harmonic (dBc) -38 Freq=2.480 GHz -42 -46 -50 -54 -58 -62 -66 -70 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F10.1 FIGURE 11: 5th Harmonic versus Output Power (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 8 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet -10 -12 Freq=2.412 GHz -14 -16 Freq=2.442 GHz -18 Freq=2.484 GHz IMD3 (dBc) -20 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power (dBm) 1283 F11.1 FIGURE 12: IMD3 versus Output Power (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 9 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet TYPICAL APPLICATION 50 / 200 mil2 22 pF4 RFOUT 1 pF 2.7 nH3 GCTL 1 PDC 2 0.1 F 6 GND 5 3.3 nH VCC 4 3 10 F 1.8 pF 22 pF1 RFIN 3.0 nH1 1283 Schematic.1.1 1. Optional and only necessary for achieving high input return loss. 2. Replaceable by 1 nH (0402) inductor for compactness. 3. Shunt capacitor can be added to the inductor to lower the 2nd harmonic. 4. LC low-pass filter can be added to lower the 2nd harmonic. FIGURE 13: Typical Application Schematic (Top View) (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 10 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet PRODUCT ORDERING INFORMATION SST12LP SST12LP 00 XX - QV6 - XXX E X Environmental Attribute E1 = non-Pb contact (lead) finish F2 = non-Pb/non-Sn contact (lead) finish Package Modifier 6 = 6 contact Package Type QV = VQFN QU = UQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = SST Communications 1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". 2. Environmental suffix "F" denotes non-Pb/non-SN solder. SST non-Pb/non-Sn solder devices are "RoHS Compliant". Valid combinations for SST12LP00 SST12LP00-QV6E SST12LP00-QU6F SST12LP00 Evaluation Kits SST12LP00-QV6E-K SST12LP00-QU6F-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 11 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet PACKAGING DIAGRAMS TOP VIEW SIDE VIEW BOTTOM VIEW 0.2 See paddle details 0.475 1 Pin #1 0.25 1.60 0.10 0.5 BSC 0.076 0.05 Max 3.00 0.10 0.3 0.4 1.00 0.80 Exposed Paddle Detail 0.25 See note 2 0.425 Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min). 1.25 0.425 0.25 1.80 1mm 6-vqfn-3x1.6-QV6-0.0 FIGURE 14: 6-contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QV6 (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 12 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet TOP VIEW SIDE VIEW BOTTOM VIEW 0.15 See paddle details 0.475 1 Pin #1 0.25 1.60 0.10 0.5 BSC 0.075 0.05 Max 3.00 0.10 0.3 0.4 0.60 0.50 Exposed Paddle Detail 0.25 See note 2 0.425 Note: 1. Although many dimensions are simliar to those of JEDEC JEP95 MO-220I, this specific package is not registered. 2. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. Untoleranced dimensions are nominal target dimensions. 4. All linear dimensions are in millimeters (max/min). 1.25 0.425 0.25 1.80 1mm 6-uqfn-3x1.6-QU6-1.0 FIGURE 15: 6-Contact Ultra-thin Quad Flat No-lead (UQFN) SST Package Code: QU6 TABLE 4: Revision History Revision Description Date 00 * S71283: SST conversion of data sheet GP1200 Jan 2005 01 * * * * * * * * * Made various changes to include UQFN package Updated Information in "Features:" on page 1 Updated "Product Description" on page 1 Updated Table 1 on page 2 Updated "Electrical Specifications" on page 3 Updated Table 2 on page 3 Updated Table 3 on page 3 Updated Figure 13 on page 10 Applied new formatting styles. Mar 2006 02 * Updated document status from Preliminary Specification to Data Sheet Apr 2008 03 * Updated "Contact Information" on page 14. Feb 2009 04 * End of Life all valid combinations in this data sheet Apr 2009 (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 13 04/09 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet CONTACT INFORMATION Marketing SST Communications Corp. 5340 Alla Road, Ste. 210 Los Angeles, CA 90066 Tel: 310-577-3600 Fax: 310-577-3605 Sales and Marketing Offices NORTH AMERICA ASIA PACIFIC NORTH Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086-5308 Tel: 408-735-9110 Fax: 408-735-9036 SST Macao Room N, 6th Floor, Macao Finance Center, No. 202A-246, Rua de Pequim, Macau Tel: 853-2870-6022 Fax: 853-2870-6023 EUROPE ASIA PACIFIC SOUTH Silicon Storage Technology Ltd. Mark House 9-11 Queens Road Hersham, Surrey KT12 5LU UK Tel: 44 (0) 1932-238133 Fax: 44 (0) 1932-230567 SST Communications Co. 16F-6, No. 75, Sec.1, Sintai 5th Rd Sijhih City, Taipei County 22101 Taiwan, R.O.C. Tel: 886-2-8698-1198 Fax: 886-2-8698-1190 JAPAN KOREA SST Japan NOF Tameike Bldg, 9F 1-1-14 Akasaka, Minato-ku Tokyo, Japan 107-0052 Tel: 81-3-5575-5515 Fax:81-3-5575-5516 SST Korea 6F, Heungkuk Life Insurance Bldg 6-7 Sunae-Dong, Bundang-Gu, Sungnam-Si Kyungki-Do, Korea, 463-020 Tel: 82-31-715-9138 Fax: 82-31-715-9137 Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com (c)2009 Silicon Storage Technology, Inc. S71283-04-EOL 14 04/09 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microchip: SST12LP00A/NE SST12LP00A/NF