AFT21H350W03SR6 AFT21H350W04GSR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 63 watt asymmetrical Doherty RF power LDMOS transistors are
designed for cellular base station applications requiring very wide
instantaneous bandwidth capability covering the frequency range of 2110 to
2170 MHz.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 750 mA, VGSB =0.7Vdc,P
out = 63 Watts Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB) D
(%) Output PAR
(dB) ACPR
(dBc)
2110 MHz 16.4 47.1 7.5 --26.0
2140 MHz 16.5 46.3 7.5 --27.9
2170 MHz 16.5 45.2 7.4 --30.1
Features
Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: AFT21H350W03S
Rev. 0, 9/2013
Freescale Semiconductor
Technical Data
2110–2170 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT21H350W03SR6
AFT21H350W04GSR6
NI--1230S--4S
AFT21H350W03SR6
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Carrier
Peaking
1. Pin connections 1 and 2 are DC coupled
and RF independent.
(1)
NI--1230GS--4L
AFT21H350W04GSR6
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature Range TC--40 to +125 C
Operating Junction Temperature Range (1,2) TJ--40 to +225 C
CW Operation @ TC=25C
Derate above 25CCW 324
0.79 W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 79C, 63 W CW, 28 Vdc, IDQA = 750 mA, VGSB = 0.7 Vdc, 2140 MHz RJC 0.49 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc) IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc) IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc) IGSS — — 1 Adc
On Characteristics -- Side A (Carrier)
Gate Threshold Voltage (5)
(VDS =6Vdc,I
D= 146 Adc) VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage (5)
(VDD =28Vdc,I
DA = 750 mAdc, Measured in Functional Test) VGS(Q) 1.4 1.8 2.2 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=4.0Adc) VDS(on) 0.1 0.2 0.3 Vdc
On Characteristics -- Side B (Peaking)
Gate Threshold Voltage (5)
(VDS =6Vdc,I
D= 303 Adc) VGS(th) 0.8 1.2 1.6 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=4.0Adc) VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955
4. Side A and Side B are tied together for these measurements.
5. Each side of device measured separately.
.(continued)
AFT21H350W03SR6 AFT21H350W04GSR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 750 mA, VGSB =0.7Vdc,P
out =63WAvg.,
f = 2110 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 15.5 16.4 18.5 dB
Drain Efficiency D43.6 47.1 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.0 7.5 —dB
Adjacent Channel Power Ratio ACPR —--26.0 --24.1 dBc
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQA = 750 mA, f = 2140 MHz
VSWR 10:1 at 32 Vdc, 195 W CW Output Power
(3 dB Input Overdrive from 110 W CW Rated Power) No Device Degradation
Typical Performances (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 750 mA, VGSB =0.7Vdc,
2110--2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —110 — W
Pout @ 3 dB Compression Point (4) P3dB —400 — W
AM/PM
(Maximum value measured at the P3dB compression point across the
2110 to 2170 MHz frequency range)
—40 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point) VBWres —140 —MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =63WAvg. GF—0.4 —dB
Gain Variation over Temperature
(--30Cto+85C) G — 0.01 —dB/C
Output Power Variation over Temperature
(--30Cto+85C) P1dB —0.003 —dB/C
1. VDDA and VDDB must be tied together and powered by a single DC power supply.
2. Part internally matched both on input and output.
3. Measurements made with device in an asymmetrical Doherty configuration.
4. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
Figure 2. AFT21H350W03SR6 Test Circuit Component Layout
AFT21HW350
Rev. 8.1
C18
C16
C17
C9
C10
C11
C12
C13
C14
C15
C19
R3
C8
C6
C2 C4
R5
R1
C1 C3
R2
C7
C5
R4
CUT OUTAREA
C
P
VDDA VDDB
VGGA
VGGB
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
D46604
Table 5. AFT21H350W03SR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC
C2 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC
C3, C4, C11, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C5, C6, C14, C17 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C7, C8, C15, C16 10 F Chip Capacitors GRM55DR61H106KA88L Murata
C9 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC
C10, C13 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC
C18, C19 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
R1 51 , 1/2 W Chip Resistor CRCW201051R0JNEF Vishay
R2, R3 3.0 K, 1/4 W Chip Resistors CRCW12063K00FKEA Vishay
R4, R5 2.7 , 1/4 W Chip Resistors CRCW12062R70FKEA Vishay
PCB Rogers RO4350B, 0.020,r=3.5 D46604 MTL
AFT21H350W03SR6 AFT21H350W04GSR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
PARC (dB)
-- 2 . 8
-- 2
-- 2 . 2
-- 2 . 4
-- 2 . 6
-- 3
2060
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
15
17
16.8
16.6
-- 3 5
50
48
46
44
-- 2 0
-- 2 3
-- 2 6
-- 2 9
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
16.4
16.2
16
15.8
15.6
15.4
15.2
2080 2100 2120 2140 2160 2180 2200 2220
42
-- 3 2
ACPR (dBc)
PARC
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM3--U
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
30
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 50 70 110
0
60
50
40
30
20
10
DDRAIN EFFICIENCY (%)
90
D
ACPR
PARC
ACPR (dBc)
-- 4 0
-- 1 0
-- 1 5
-- 2 0
-- 3 0
-- 2 5
-- 3 5
18
Gps, POWER GAIN (dB)
17.5
17
16.5
16
15.5
15
--1dB=18.6W
-- 5
Gps
IM3--L
1
VDD =28Vdc,I
DQA = 750 mA, VGSB =0.7Vdc
f = 2140 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,P
out =63W(Avg.)
IDQA = 750 mA, VGSB =0.7Vdc
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
100
IM5--L
IM5--U
VDD =28Vdc,P
out = 40 W (PEP)
IDQA = 750 mA, VGSB =0.7Vdc
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM7--L
IM7--U
--2dB=55.1W
--3dB=77.5W
Gps
6RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 2 5
-- 3 5
14.5
17.5
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
17
16.5
10 100 200
10
-- 7 5
ACPR (dBc)
16
15.5
15
-- 1 5
-- 4 5
-- 5 5
-- 6 5
Figure 7. Broadband Frequency Response
0
24
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 750 mA
VGSB =0.7Vdc
16
12
8
GAIN (dB)
20
4
1700 1800 1900 2000 2100 2200 2300
Gain
2110 MHz
2170 MHz 2140 MHz
2140 MHz
2110 MHz
2170 MHz
2110 MHz
VDD =28Vdc,I
DQA = 750 mA
VGSB = 0.7 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01%
Probability on CCDF
AFT21H350W03SR6 AFT21H350W04GSR6
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQA = 763 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz) Zsource
()Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 4.29 - j7.28 3.75 + j6.90 3.07 - j4.95 18.7 51.9 155 54.7 -12
2140 5.23 - j7.74 4.64 + j7.21 3.16 - j5.18 18.7 51.9 156 54.8 -13
2170 6.26 - j7.95 5.75 + j7.35 3.27 - j5.37 18.9 51.9 155 54.1 -13
f
(MHz) Zsource
()Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 4.29 - j7.28 3.96 + j7.42 3.18 - j5.59 16.5 52.8 189 57.1 -18
2140 5.23 - j7.74 5.04 + j7.81 3.30 - j5.71 16.6 52.8 189 56.8 -19
2170 6.26 - j7.95 6.44 + j7.94 3.40 - j5.88 16.7 52.7 187 56.2 -20
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 8. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 763 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz) Zsource
()Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 4.29 - j7.28 3.63 + j7.22 5.78 - j1.16 21.6 49.6 91 65.4 -22
2140 5.23 - j7.74 4.54 + j7.46 5.88 - j1.54 21.5 49.8 95 65.1 -21
2170 6.26 - j7.95 5.66 + j7.76 4.75 - j1.49 21.6 49.8 96 65.0 -23
f
(MHz) Zsource
()Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 4.29 - j7.28 3.84 + j7.59 6.49 - j2.11 19.4 50.6 114 65.3 -28
2140 5.23 - j7.74 4.91 + j8.02 6.10 - j1.54 19.5 50.4 110 65.9 -30
2170 6.26 - j7.95 6.28 + j8.14 5.82 - j2.06 19.4 50.7 117 65.7 -29
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 9. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
VDD =28Vdc,V
GSB =0.7Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz) Zsource
()Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 2.76 - j5.24 2.87 + j5.85 2.36 - j4.99 14.4 54.7 292 54.6 -22
2140 3.54 - j5.55 3.73 + j6.27 2.61 - j5.09 14.6 54.7 292 55.0 -23
2170 5.02 - j5.82 5.01 + j6.41 2.80 - j5.30 14.6 54.6 288 53.5 -25
f
(MHz) Zsource
()Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 2.76 - j5.24 3.16 + j6.20 2.51 - j5.47 12.1 55.3 337 54.4 -28
2140 3.54 - j5.55 4.25 + j6.63 2.77 - j5.62 12.3 55.3 336 53.9 -29
2170 5.02 - j5.82 5.80 + j6.63 3.08 - j5.67 12.4 55.2 332 54.1 -31
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 10. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =0.7Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz) Zsource
()Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 2.76 - j5.24 2.36 + j6.00 3.43 - j2.05 15.8 52.8 189 66.0 -29
2140 3.54 - j5.55 3.08 + j6.45 3.22 - j2.11 15.9 52.8 191 65.9 -31
2170 5.02 - j5.82 4.19 + j6.80 3.07 - j2.13 15.9 52.8 190 65.0 -33
f
(MHz) Zsource
()Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W) D
(%) AM/PM
()
2110 2.76 - j5.24 2.74 + j6.36 3.71 - j2.53 13.7 53.7 233 65.3 -36
2140 3.54 - j5.55 3.67 + j6.84 3.57 - j2.44 13.8 53.6 231 65.1 -39
2170 5.02 - j5.82 5.15 + j7.06 3.45 - j2.52 13.8 53.7 234 64.3 -41
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 11. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
AFT21H350W03SR6 AFT21H350W04GSR6
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2140 MHz
0
-- 2
-- 1
-- 4
-- 5
-- 6
-- 7
-- 3
0
-- 2
-- 1
-- 4
-- 5
-- 6
-- 7
-- 3
0
-- 2
-- 1
-- 4
-- 5
-- 6
-- 7
-- 3
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 12. P1dB Load Pull Output Power Contours (dBm)
REAL ()
0
-- 2
IMAGINARY ()
345 9
-- 1
-- 4
-- 5
6
-- 6
2
Figure 13. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 14. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P1dB Load Pull AM/PM Contours ()
REAL ()
-- 7
78
-- 3
345 96
278
345 96
278 345 96
278
P
E49
49.5
50
50.5
51
51.5
48 48.5
P
E64
62
60
58
56
54
52
50
P
E
22
21
21.5
20.5
20
19.5
19
18.5
18 P
E
-- 1 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
-- 2 4
-- 2 6 -- 2 8
10 RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2140 MHz
0
-- 2
-- 1
-- 4
-- 5
-- 6
-- 7
-- 3
0
-- 2
-- 1
-- 4
-- 5
-- 6
-- 7
-- 3
0
-- 2
-- 1
-- 4
-- 5
-- 6
-- 7
-- 3
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 16. P3dB Load Pull Output Power Contours (dBm)
REAL ()
0
-- 2
IMAGINARY ()
345 9
-- 1
-- 4
-- 5
6
-- 6
2
Figure 17. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 18. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 19. P3dB Load Pull AM/PM Contours ()
REAL ()
-- 7
78
-- 3
345 96
278
345 96
278 345 96
278
49.5
50 50.5
51
51.5
P
E
52
52.5
49
64
62
60
58
54
52
50
P
E
56
20
19.5
19
18
P
E
18.5
17.5
17
16.5
16
-- 1 8
-- 2 0
-- 2 2
-- 2 4
-- 2 6
-- 2 8
P
E
-- 3 0
-- 3 2
-- 3 4
52
AFT21H350W03SR6 AFT21H350W04GSR6
11
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 20. P1dB Load Pull Output Power Contours (dBm)
REAL ()
-- 2
IMAGINARY ()
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
Figure 21. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 22. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 23. P1dB Load Pull AM/PM Contours ()
REAL ()
-- 7
44.5
-- 3
5.5
P
51 51.5
50.5 52 52.5
53
53.5
54
54.5
54
53.5
-- 2
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
-- 7
44.5
-- 3
5.5
-- 2
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
-- 7
44.5
-- 3
5.5
-- 2
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
-- 7
44.5
-- 3
5.5
62
60
50
P
E
E
52
54 56
58
64
12.5
12
P
E
13 13.5
14
14.5 15
15.5
-- 2 2
-- 2 4
-- 2 6
-- 2 8
P
E
-- 3 0
-- 3 2
-- 3 4
-- 3 6
12 RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2140 MHz
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 24. P3dB Load Pull Output Power Contours (dBm)
REAL ()
-- 2
IMAGINARY ()
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
Figure 25. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 26. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 27. P3dB Load Pull AM/PM Contours ()
REAL ()
-- 7
44.5
-- 3
5.5
-- 2
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
-- 7
44.5
-- 3
5.5
-- 2
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
-- 7
44.5
-- 3
5.5
-- 2
22.5 3 5
-- 1
-- 4
-- 5
3.5
-- 6
1.5
-- 7
44.5
-- 3
5.5
P
E
51.5 52 52.5
53 53.5
54
54.5
55
64
62
60
58
54
50
60
P
E
52
56
11
10.5
10
P
E
11.5 12
12.5
13
13.5
-- 2 6
-- 2 8 P
E
-- 3 0
-- 3 2
-- 3 4
-- 3 6
-- 3 8
-- 4 0
-- 4 2
AFT21H350W03SR6 AFT21H350W04GSR6
13
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
14 RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
AFT21H350W03SR6 AFT21H350W04GSR6
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RF Device Data
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16 RF Device Data
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RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Sept. 2013 Initial Release of Data Sheet
18 RF Device Data
Freescale Semiconductor, Inc.
AFT21H350W03SR6 AFT21H350W04GSR6
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Document Number: AFT21H350W03S
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