2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S (typ.) Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V Gate-source voltage VGSS 20 V ID 1 A Drain current (Note 1) Drain power dissipation (Tc = 25C) PD 25 W Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Marking JEDEC JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) K2013 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Symbol IGSS Test Condition VDS = 0, VGS = 20 V Min Typ. Max Unit -- -- 100 nA V (BR) DSS ID = 10 mA, VGS = 0 180 -- -- V Gate-source cut-off voltage (Note 2) VGS (OFF) VDS = 10 V, ID = 10 mA 1.8 -- 2.8 V Drain-source saturation voltage VDS (ON) ID = 0.6 A, VGS = 10 V -- 1.7 3.0 V Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.3 A -- 0.7 -- S Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz -- 170 -- Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz -- 45 -- Reverse transfer capacitance Crss VDD 10 V, VGS = 0, f = 1 MHz -- 17 -- pF Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VGS (OFF) Classification O: 0.8~1.6, Y: 1.4~2.8 This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-06 2SK2013 2 2004-07-06 2SK2013 Switching Time Test Circuit Waveforms 3 2004-07-06 2SK2013 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-06