Mar. 2009
1
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
¡ITQRM
Repetitive controllable on-state current
.......... 1000A
¡IT(AV) Average on-state current ...................... 400A
¡VDRM
Repetitive peak off-state voltage
.................. 4500V
¡Anode short type
OUTLINE DRAWING Dimensions in mm
FG1000BV-90DA
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
1000
630
400
8.4
2.9 × 105
1000
10
17
60
500
240
15
45
100
–40 ~ +125
–40 ~ +150
12 ~ 15
530
V
V
V
V
V
V
90DA
17
17
17
4500
4500
3600
+ : VGK = –2V
MAXIMUM RATINGS
Symbol Parameter Voltage class Unit
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak off-state voltage
+
DC off-state voltage
+
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
Symbol Parameter Conditions UnitRatings
V
D
= 2250V, V
DM
= 3375V, T
j
= 125°C, C
S
= 0.7µF, L
S
= 0.3µH
f = 60Hz, sine wave θ = 180°, Tf = 70°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 2250V, IGM = 20A, Tj = 125°C
Recommended value 13
Standard value
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
AUXILIARY CATHODE
CONNECTOR (RED)
353 ± 8
GATE (WHITE)
f 3.5 ± 0.2 DEPTH 2.2 ± 0.2
CATHODE
0.4 MIN0.4 MIN
TYPE NAME
ANODE
f 47
f 47
f 75 MAX
26 ± 0.5
f 3.5 ± 0.2 DEPTH 2.2 ± 0.2
Mar. 2009
2
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
Tj = 125°C, ITM = 1000A, Instantaneous measurment
Tj = 125°C, VRRM Applied
Tj = 125°C, VDRM Applied, VGK = –2V
Tj = 125°C, VRG = 17V
Tj = 125°C, VD = 2250V, VGK = –2V
Tj = 125°C, ITM = 1000A, IGM = 20A, VD = 2250V
Junction to fin
PERFORMANCE CURVES
4.0
100
100
100
—
10
—
1.5
2.5
0.03
V
mA
mA
mA
V/µs
µs
A
V
A
K/W
VTM
IRRM
IDRM
IRG
dv/dt
tgt
IGQM
VGT
IGT
Rth(j-f)
tgq ——20µs
—
—
—
—
—
—
380
—
—
—
—
—
—
—
1000
—
—
—
—
—
Symbol Limits Unit
ELECTRICAL CHARACTERISTICS
Test conditionsParameter
Turn-off time
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C
T
j
= 125°C, I
TM
= 1000A, V
D
= 2250V, d
iGQ
/d
t
= –30A/µs
VRG = 17V, CS = 0.7
µ
F, LS = 0.3
µ
H
Min Typ Max
100
2310–1 5710
023 5710
123 5710
2
102
7
5
3
2
101
7
5
3
2
7
5
3
2
10–1
VFGM = 10V
VGT = 1.5V
PFG(AV) = 45W
IFGM = 60A
Tj = 25°C
PFGM = 240W
IGT = 2.5A
0.04
0.03
0.02
0.01
02310–3 5710
–2
231005710
1
23 5710
–1 23 5710
0
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE CHARACTERISTIC
SURGE ON-STATE CURRENT (kA)
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE ON-STATE CURRENT
THERMAL IMPEDANCE (K/W)
TIME (S)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
GATE VOLTAGE (V)
GATE CURRENT (A)
GATE CHARACTERISTICS
101
102
2
3
5
7
103
2
3
5
7
104
2
3
5
7
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Tj = 125°C
0
2
4
6
8
10
100101
23457 10
2
23457
Mar. 2009
3
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ON-STATE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
FIN TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
FIN TEMPERATURE (°C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
GATE TRIGGER CURRENT (A)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
TURN ON TIME tgt, TURN ON DELAY TIME td (µs)
TURN ON GATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
ON-STATE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
2000
08000 100 300 500 700
1800
1600
1400
1200
1000
800
600
400
200
200 400 600
DC
270°
θ = 30°
60°
90°
120°
180°
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
2000
1500
04000
500
1000
100 200 300
θ = 30°
60°
90°
120°180°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
130
110
100
80
70
60 4000
90
120
100 200 300
θ = 30°60°90°180°
120°
140
120
100
80
60
130
110
90
70
50
40 8000 200 400 600 700100 300 500
θ = 30°
90°180°DC
270°60°120°
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
8
6
5
3
1
0160–40 0 40 80 120
2
4
7
VD = 24V
RL = 0.1Ω
HALF SINE WAVE
IGT
VGT
0
2
4
6
8
10
12
14
16
01020304050
tgt
td
IT = 1000A
VD = 2250V
diT/dt = 1000A/µs
diG/dt = 15A/µs
Tj = 125°C
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
Mar. 2009
4
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
500
400
300
200
100
01000200 400 600 800
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 0.7µF
L
S
= 0.3µH
T
j
= 125°C
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
SWITCHING ENERGY Eon (J/P)
TURN ON CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF GATE CURRENT (A)
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
SWITCHING ENERGY Eoff (J/P)
TURN OFF CURRENT (A)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs)
TURN OFF CURRENT (A)
TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs)
25
20
15
10
5
01000200 400 600 800
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 0.7µF
L
S
= 0.3µH
T
j
= 125°C
50
40
30
20
10
03010 20 40 50
t
gq
t
s
V
D
= 2250V
V
DM
= 3375V
I
T
= 1000A
V
RG
= 17V
C
S
= 0.7µF
L
S
= 0.3µH
T
j
= 125°C
500
400
300
200
100
03010 20 40 50
V
D
= 2250V
V
DM
= 3375V
I
T
= 1000A
V
RG
= 17V
C
S
= 0.7µF
L
S
= 0.3µH
T
j
= 125°C
3.0
2.5
2.0
1.5
1.0
0.5 1000
200 400 600 800
V
D
= 2250V
V
DM
= 3375V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 0.7µF
L
S
= 0.3µH
T
j
= 125°C
1.6
1.2
01200200 400 600 800 1000
0.4
0.8
1.4
1.0
0.2
0.6 V
D
= 2250V
I
GM
= 25A
d
iG
/d
t
= 10A/µs
C
S
= 0.7µF
R
S
= 5Ω
T
j
= 125°C
d
iT
/d
t
= 300A/µs
200A/µs
100A/µs
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
