TECHNICAL DATA
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
Devices Qualified Level
2N3498
2N3498L 2N3499
2N3499L 2N3500
2N3500L 2N3501
2N3501L
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol 2N3498*
2N3499* 2N3500*
2N3501*
Unit
Collector-Emitter Voltage VCEO 100 150 Vdc
Collector-Base Voltage VCBO 100 150 Vdc
Emitter-Base Voltage VEBO 6.0 6.0 Vdc
Collector Current IC 500 300 mAdc
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2) PT 1.0
5.0 W
W
Operating & Storage Junction Temp. Range TJ, Tstg -55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance: Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
35
175
0C/W
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 W/0C for TA > 250C
2) Derate linearly 28.6 W/0C for TC > 250C
TO-5*
2N3498L, 2N3499L
2N3500L, 2N3501L
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc 2N3498, 2N3499
2N3500, 2N3501
V(BR)CEO
100
150
Vdc
Collector-Base Cutoff Current
VCB = 50 Vdc 2N3498, 2N3499
VCB = 75 Vdc 2N3500, 2N3501
VCB = 100 Vdc 2N3498, 2N3499
VCB = 150 Vdc 2N3500, 2N3501
ICBO
50
50
10
10
ηAdc
ηAdc
µAdc
µAdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
VEB = 6.0 Vdc
IEBO
25
10
ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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2N3498, L, 2N3499, L, 2N3500, L, 2N3501, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
IC = 1.0 mAdc, VCE = 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
IC = 10 mAdc, VCE = 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
IC = 150 mAdc, VCE = 10 Vdc 2N3498, 2N3500
2N3499, 2N3501
IC = 300 mAdc, VCE = 10 Vdc 2N3500
2N3501
IC = 500 mAdc, VCE = 10 Vdc 2N3498
2N3499
hFE
20
35
25
50
35
75
40
100
15
20
15
20
120
300
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc All Types
IC = 300 mAdc, IB = 30 mAdc 2N3498, 2N349
IC = 150 mAdc, IB = 15 mAdc 2N3500, 2N3501
VCE(sat)
0.2
0.6
0.4
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc All Types
IC = 300 mAdc, IB = 30 mAdc 2N3498, 2N3499
IC = 150 mAdc, IB = 15 mAdc 2N3500, 2N3501
VBE(sat)
0.8
1.4
1.2
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz hfe 1.5 8.0
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz 2N3498, 2N3499
2N3500, 2N3501 Cobo
10
8.0 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 80 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VEB = 5 Vdc; IC = 150 mAdc; IB1 = 15 mAdc ton 115 ηs
Turn-Off Time
IC = 150 mAdc; IB1 = IB2 = -15 mAdc toff 1150 ηs
SAFE OPERATING AREA
DC Tests
TC = +250C, tr ≥ 10 ηs; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 Vdc, IC = 500 mAdc 2N3498, 2N3499
VCE = 16.67 Vdc, IC = 300 mAdc 2N3500, 2N3501
Test 2
VCE = 50 Vdc, IC = 100 mAdc All Types
Test 3
VCE = 80 Vdc, IC = 40 mAdc All Types
Clamped Switching
TA = +250C
Test 1
IB = 85 mAdc, IC = 500 mAdc 2N3498, 2N3499
IB = 50 mAdc, IC = 300 mAdc 2N3500, 2N3501
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
