AOY2N60 600V,2A N-Channel MOSFET General Description Product Summary * Advanced High Voltage MOSFET technology * Low RDS(ON) * Low Ciss and Crss * High Current Capability * RoHS and Halogen Free Compliant VDS @ Tj,max Applications 700V ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 4.7 100% UIS Tested 100% Rg Tested * General Lighting for LED and CCFL * AC/DC Power supplies for Industrial, Consumer, and Telecom TO251B D Bottom View Top View D G D G G S S D S AOY2N60 Orderable Part Number Package Type Form Minimum Order Quantity AOY2N60 TO-251B Tube 4000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25C Continuous Drain B Current TC=100C Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C,I Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25C B o Power Dissipation Derate above 25 C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G ID 30 V 1.4 A 6 IAR 4.6 A EAR 10.6 mJ EAS dv/dt 97 5 57 mJ V/ns W 0.45 -50 to 150 W/ oC C 300 C PD TJ, TSTG TL Maximum Case-to-sink A Symbol RJA RCS Maximum Junction-to-CaseD,F RJC Rev.1.0: May 2014 Units V 2 IDM C,I Maximum 600 Typical 40 Maximum 50 Units C/W 1.8 0.5 2.2 C/W C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions Min ID=250A, VGS=0V, TJ=25C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250A, VGS=0V, TJ=150C 700 V ID=250A, VGS=0V 0.7 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125C 10 Gate-Body leakage current VDS=0V, VGS=30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250A 100 3.4 A 4 4.5 n V 4.7 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A 3.9 gFS Forward Transconductance VDS=40V, ID=1A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.79 IS Maximum Body-Diode Continuous Current 2 A ISM Maximum Body-Diode Pulsed Current C 6 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance S 295 VGS=0V, VDS=25V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge pF 2.3 pF 3.2 6.5 VGS=10V, VDS=480V, ID=2A pF 30 11 nC Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 1.8 nC tD(on) Turn-On DelayTime 16 ns tr Turn-On Rise Time 11 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=300V, ID=2A, RG=25 28 ns 14 ns IF=2A,dI/dt=100A/s,VDS=100V 268 Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/s,VDS=100V 1.6 ns C A. The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedance from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. H. L=60mH, IAS=1.8A, VDD=150V, RG=10, Starting TJ=25C. I. L=1.0mH, VDD=150V, RG=25, Starting TJ=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: May 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 10 -55C VDS=40V 7V 4 3 6V ID(A) ID (A) 10V 1 VDS 2 125C 5.5V 25C 1 VGS=5V 0 0.1 0 5 10 15 20 25 30 2 4 8 10 3 Normalized On-Resistance 10 8 RDS(ON) () 6 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=10V 6 4 2 1 2 3 4 2 VGS=10V ID=1A 1.5 1 0.5 0 -100 0 0 2.5 5 -50 0 50 100 150 200 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1E+01 1E+00 40 1.1 125C 1 IS (A) BVDSS (Normalized) ID=30A 125 1E-01 25C 1E-02 0.9 1E-03 25 0.8 -100 1E-04 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev.1.0: May 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 Capacitance (pF) VGS (Volts) Ciss VDS=480V ID=2A 12 9 6 100 Coss VDS 10 Crss 3 0 1 0 2 4 6 8 10 0.1 1 Qg (nC) Figure 7: Gate-Charge Characteristics 10 VDS (Volts) Figure 8: Capacitance Characteristics 10 800 10s TJ(Max)=150C TC=25C RDS(ON) limited 600 100s 1 1ms DC 10ms 0.1 Power (W) ID (Amps) 100 400 200 TJ(Max)=150C TC=25C 0 0.0001 0.01 1 10 100 1000 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2.2C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: May 2014 www.aosmd.com Page 4 of 6 75 2.5 60 2.0 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 45 1.5 VDS 30 15 1.0 0.5 0 0 25 50 75 100 125 150 0.0 0 TCASE (C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note B) 400 TJ(Max)=150C TA=25C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) ZJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev.1.0: May 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.1.0: May 2014 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6