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DD(KD)30HB120/160
DIODE MODULE
Symbol Item Ratings
DD30HB120
1200
1350
Unit
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD30HB160
1600
1700
V
V
Symbol Item
Average Forward Current
Conditions Ratings Unit
AIF(AV)
Single phase, half wave, 180°conduction, Tc:115℃
30
IF (RMS)
IFSM
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180°conduction, Tc:115℃
1
/
2 cycle, 50/60HZ, peak value, non-repetitive
47
550/600
A
A
I2tI2t Value for one cycle of surge current 1500 A2S
Tj Junction Temperature −40 to +150 ℃
Tstg Storage Temperature −40 to +125 ℃
V
ISO
Isolation Breakdown Voltage(R.M.S.)
Mounting
Torque
A.C.1minute 2500 V
Mounting
(M6)
Terminal(M5)
Mass
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
4.7(48)
2.7(28)
N・m
(㎏f・B)
g170
93.5MAX
26MAX30MAX 1321
80
16.5 23
3
~+ –
21
23 3M5
2-6.5
Unit:a
■Electrical Characteristics
Symbol
IRRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at VDRM, single phase, half wave. Tj=150℃
Ratings
10
1.50
0.80
Unit
mA
VFM Forward Voltage Drop, max.
Foward current 90A,Tj=25℃,Inst. measurement
V
Rth(j-c)Thermal Impedance, max. Junction to case ℃/W
Power Diode Module DD30HB series are designed for various rectifier circuits.
DD30HB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
●Isolated mounting base
●Two elements in a package for simple (single and three phase) bridge
connections
●Highly reliable glass passivated chips
●High surge current capability
(Applications)
Various rectifiers, Battery chargers, DC motor drives
UL;E76102(M)
■Maximum Ratings (Tj=25℃unless otherwise specified)
3 2 1
1
DD
KD
3
2
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