VBO160-08NO7 3~ 1~ Rectifier Standard Rectifier Module VRRM = 800 V I DAV = 160 A I FSM = 2800 A 1~ Rectifier Bridge Part number VBO160-08NO7 - ~ ~ + Features / Advantages: Applications: Package: PWS-E Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For one phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Easy to mount with two screws Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130425a VBO160-08NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 800 V IR reverse current VF forward voltage drop min. typ. VR = 800 V TVJ = 25C 200 A VR = 800 V TVJ = 150C 3.5 mA I F = 160 A TVJ = 25C 1.07 V 1.22 V 0.96 V I F = 320 A TVJ = 125 C I F = 160 A I F = 320 A TC = 110C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 160 A TVJ = 150 C 0.74 V d = 0.5 for power loss calculation only Ptot 1.15 T VJ = 150 C 2.4 m 0.4 K/W 0.15 K/W TC = 25C 310 W t = 10 ms; (50 Hz), sine TVJ = 45C 2.80 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 3.03 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 2.38 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.57 kA t = 10 ms; (50 Hz), sine TVJ = 45C 39.2 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 38.1 kAs TVJ = 150 C 28.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 27.5 kAs 133 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20130425a VBO160-08NO7 Package Ratings PWS-E Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 250 Unit A -40 125 C -40 150 C Weight 273 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL typ. creepage distance on surface | striking distance through air t = 1 minute Made in Germany Product Number 4.25 5.75 4.25 5.75 Nm Nm terminal to terminal 12.0 mm terminal to backside 26.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number VBO160-08NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VBO160-08NO7 * on die level Delivery Mode Box Code No. 475785 T VJ = 150 C Rectifier V 0 max threshold voltage 0.74 V R 0 max slope resistance * 1.2 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 5 Data according to IEC 60747and per semiconductor unless otherwise specified 20130425a VBO160-08NO7 Outlines PWS-E 3 30 7 M6x12 94 26 15 26 80 72 B - A + 3 4 2 5 1 6 12 2.8 x 0.8 6.5 E ~ 6 5 5 54 27 6.5 C ~ 7 25 66 M6 - IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130425a VBO160-08NO7 Rectifier 105 2500 240 50 Hz 0.8 x V RRM 50Hz, 80% VRRM 200 TVJ= 45C 2000 160 IFSM TVJ= 150C 120 IF TVJ = 45C [A] 2 [A s] 1500 80 [A] 104 TVJ = 150C TVJ = 150C 40 TVJ = 125C TVJ = 25C 0 0.5 1.0 1000 0.001 1.5 103 0.01 0.1 1 2 1 3 4 5 6 7 89 t [ms] VF [V] t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 2 Fig. 3 I t vs. time per diode 280 100 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 60 Ptot 240 200 IdAV [A] 40 [W] DC = 1 0.5 0.4 0.33 0.17 0.08 160 120 80 20 40 0 0 0 20 40 60 80 100 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 TC [C] Tamb [C] IdAVM [A] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1 0.1 ZthJC [K/W] Ri 0.050 0.01 0.001 1 10 100 1000 ti 0.02 0.003 0.01 0.100 0.225 0.177 0.8 0.070 0.58 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130425a