POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Three Phase PSD 41 IdAVM = 70 A
Rectifier Bridges VRRM = 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800 800 PSD 41/08
1200 1200 PSD 41/12
1400 1400 PSD 41/14
1600 1600 PSD 41/16
1800 1800 PSD 41/18
Symbol Test Conditions Maximum Ratings
IdAVM TC = 100°C, module 70 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 550 A
VR = 0 t = 8.3 ms (60 Hz), sine 600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 500 A
VR = 0 t = 8.3 ms (60 Hz), sine 550 A
i2 dt TVJ = 45°C t = 10 ms (50 Hz), sine 1520 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 1520 A2 s
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A2 s
TVJ -40 ... + 150 °C
TVJM 150 °C
Tstg -40 ... + 125 °C
VISOL 50/60 HZ, RMS t = 1 min 2500 V
IISOL 1 mA t = 1 s 3000 V
Md Mounting torque (M5) 5 Nm
Weight typ. 100 g
Symbol Test Conditions Characteristic Value
IR VR = VRRM T
VJ = 25°C 0.5 mA
VR = VRRM T
VJ = TVJM 10 mA
VF IF = 150 A TVJ = 25°C 1.7 V
VTO For power-loss calculations only 0.8 V
rT TVJ = TVJM 8
m
RthJC per diode; DC current 1.45 K/W
per module 0.242 K/W
RthJK per diode; DC current 1.90 K/W
per module 0.317 K/W
dS Creeping distance on surface 16.1 mm
dA Creeping distance in air 7.5 mm
a Max. allowable acceleration 50 m/s2
Features
Package with fast-on terminals
Isolation voltage 3000 V
Planar glasspassivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 148688
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
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PSD 41
POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
11.5
0
5
10
15
20
25
30
IF
V
F
A
V
T=150°C
T=25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
550 500
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
2
3
4
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
Fig. 3 i2dt versus time
(1-10ms) per diode (or thyristor)
604020
0
25
50
75
100
125
150
175
200
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.76
1.26
0.76
0.51
0.38 0.26 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSD 41
Fig. 4 Power dissipation versus direct output current and ambient
tem
p
erature
50 100 150 200
0
20
40
60
80
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case tem
p
erature
0.01 0.1 1 10
1
2
3
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
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