Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
14.2 20
39 50
R
θJC
0.8 1.5
2.5 W
T
A
=70°C 1.6
W
Junction and Storage Temperature Range
A
P
D
°C
100
50
-55 to 175
T
C
=100°C
I
D
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
G
T
C
=100°C
B
30
Maximum Junction-to-Ambient
A
Steady-State
85
63
200
Avalanche Current
C
30
Power Dissipation
A
T
A
=25°C P
DSM
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Pulsed Drain Current
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
A
Repetitive avalanche energy L=0.1mH
C
112 mJ
AOD4132
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4mΩ (V
GS
= 10V)
R
DS(ON)
< 6mΩ (V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
General Description
The AOD4132 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
-RoHS Compliant
-Halogen Free*
G
D
S
G
TO-252
D-PAK
Top View
S
Bottom View
D
G
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4132
Symbol Min Typ Max Units
BV
DSS
30 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1 1.8 3 V
I
D(ON)
85 A
2.8 4
T
J
=125°C 4.4 5.5
4.4 6 mΩ
g
FS
106 S
V
SD
0.72 1 V
I
S
85 A
C
iss
3700 4400 pF
C
oss
700 pF
C
rss
390 pF
R
g
0.54 0.7 Ω
Q
g
(10V) 63 76 nC
Q
g
(4.5V) 33 40 nC
Q
gs
8.6 nC
Q
gd
17.6 nC
t
D(on)
12 ns
t
r
15.5 ns
t
D(off)
40 ns
t
f
14 ns
t
rr
34 41 ns
Q
rr
30 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=15V, I
D
=20A
Total Gate Charge
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
mΩ
V
GS
=4.5V, I
D
=20A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 1: Sep 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4132
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
40
50
60
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
3.5V
10V
4.0V
0
10
20
30
40
50
60
1.5 2 2.5 3 3.5 4 4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
2
3
4
5
6
7
8
0 10 20 30 40 50 60
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=10V
V
GS
=4.5V
0
2
4
6
8
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25°C
125°C
I
D
=20A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4132
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 10 20 30 40 50 60 70
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
1000
2000
3000
4000
5000
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
20
40
60
80
100
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
C
oss
C
rss
0.1
1
10
100
1000
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
µ
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4132
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
120
0.000001 0.00001 0.0001 0.001 0.01
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A), Peak Avalanche Current
T
A
=150°C
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
T
A
=25°C
DD
D
A
VBV
IL
t−
=
0
20
40
60
80
100
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating I
D
(A)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD4132
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Id t
t
rr
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
Alpha & Omega Semiconductor, Ltd. www.aosmd.com