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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2106
VN2110
Package Options
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
❏Commercial and Military versions available
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏High input impedance and high gain
Applications
❏Motor controls
❏Amplifiers
❏Power supply circuits
❏Converters
❏Switches
❏Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Order Number / Package
BVDSS /R
DS(ON)
BVDGS (max) TO-92 TO-236AB* Die†
60V 4.0ΩVN2106N3 – —
100V 4.0Ω—VN2110K1 VN2110ND
†MIL visual screening available
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Product marking for SOT-23:
N1A❋
where ❋ = 2-week alpha date code
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
TO-236AB
(SOT-23)
top view
TO-92
S G D
S
D
G
2
Package ID (continuous)✝ID (pulsed) Power Dissipation*
θ
jc
θ
ja IDR†IDRM
@ TC = 25°C °C/W °C/W
TO-92 0.3A 1.0A 1.0W 125 170 0.3A 1.0A
TO-236AB 0.2A 0.8A 0.36W (TA = 25°C) 200 350 0.2A 0.8A
† ID (continuous) is limited by max rated Tj.
* Total for package.
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source VN2110 100 VI
D = 1mA, VGS = 0V
Breakdown Voltage VN2106 60
VGS(th) Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 1mA
∆VGS(th) Change in VGS(th) with Temperature -3.8 -5.5 mV/°CV
GS = VDS, ID = 1mA
IGSS Gate Body Leakage 0.1 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 1 µAV
GS = 0V, VDS = Max Rating
100 µAV
GS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON) ON-State Drain Current 0.6 A VGS = 10V, VDS = 25V
RDS(ON) Static Drain-to-Source 4.5 6.0 ΩVGS = 5V, ID = 75mA
ON-State Resistance 3.0 4.0 ΩVGS = 10V, ID = 500mA
∆RDS(ON) Change in RDS(ON) with Temperature 0.70 1.0 %/°CV
GS = 10V, ID = 500mA
GFS Forward Transconductance 150 400 m VDS = 25V, ID =0.5A
CISS Input Capacitance 35 50
COSS Common Source Output Capacitance 13 25 pF VGS = 0V, VDS = 25V, f = 1MHz
CRSS Reverse Transfer Capacitance 4 5
td(ON) Turn-ON Delay Time 3 5
trRise Time 5 8
td(OFF) Turn-OFF Delay Time 6 9
tfFall Time 5 8
VSD Diode Forward Voltage Drop 1.2 1.8 V ISD = 0.6A, VGS = 0V
trr Reverse Recovery Time 400 ns ISD = 0.6A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
VN2106/VN2110
Switching Waveforms and Test Circuit
Electrical Characteristics (@ 25°C unless otherwise specified)
Thermal Characteristics
VDD = 25V
ns ID = 0.6A
RGEN = 25Ω
Ω
3
Typical Performance Curves
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0
VDS (volts) VDS (volts)
ID (amperes)
ID (amperes)
Saturation Characteristics
Maximum Rated Safe Operating Area
0.1 100101
VDS (volts)
I(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001 100.01 0.1 1.0
tp (seconds)
Transconductance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
0 0.40.2
GFS (siemens)
ID (amperes)
Power Dissipation vs. Case Temperature
0 15010050
2.0
1.0
0
1257525
TC (°C)
PD (watts)
TO-92
P
D
= 1W
T
C
= 25°C
TO-92
T
A
= -55°C
V
DS
= 25V
0102030 5040
4V
3V
0246 108
25°C
125°C
VGS =
7V
9V
0.6 1.00.8
10V
8V
6V
5V
2.0
1.6
1.2
0.8
0.4
0
4V
3V
7V
9V
10V
8V
6V
5V
VGS =
TO-92 (DC)
TA = 25°C
TO-92 (pulsed)
TO-236AB
10
1.0
0.1
0.01
SOT-23 (pulsed)
SOT-23 (DC)
TO-236AB
P
D
= 0.36W
T
A
= 25°C
VN2106/VN2110
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Typical Performance Curves
Gate Drive Dynamic Characteristics
QG (nanocoulombs)
VGS (volts)
Tj (°C)
VGS(th) (normalized)
RDS(ON) (normalized)
VGS(th) and RDS(ON) Variation with Temperature
On-Resistance vs. Drain Current
RDS(ON) (ohms)
BVDSS (normalized)
Tj (°C)
Transfer Characteristics
VGS (volts)
ID (amperes)
Capacitance vs. Drain-to-Source Voltage
50
C (picofarads)
VDS (volts)
ID (amperes)
BVDSS Variation with Temperature
010203040
25
0
0246810
2.0
1.6
1.2
0.8
0.4
0
-50 0 50 100 150
1.1
1.0
10
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0 0.2 0.4 0.6 0.8 1.0
-50 0 50 100 150
30 pF V
DS
= 40V
V
DS
= 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55°C
V
DS
= 25V
125°C
0 0.5 1.0 1.5 2.52.0
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
90 pF
2.0
1.6
1.2
0.8
0.4
0
V
GS(th)
@ 1mA
25°C
0
R
DS(ON)
@ 10V, 0.5A
VN2106/VN2110
