TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low threshold (2.0V max.) High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Package Options BVDSS/BVDGS Device RDS(ON) ID(ON) VGS(th) (min) (A) (max) (V) 3.0 2.0 TO-243AA (SOT-89) Die* (V) (max) () TN2510N8-G TN2510ND 100 1.5 TN2510 -G indicates package is RoHS compliant (`Green'). * MIL visual screening available. Pin Configuration DRAIN Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage 20V Operating and storage temperature Soldering temperature* -55OC to +150OC O 300 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. GATE SOURCE DRAIN TO-243AA (SOT-89) (N8) Product Marking W = Code for week sealed = "Green" Packaging TO-243AA (SOT-89) (N8) TN5AW TN2510 Thermal Characteristics (continuous) (mA) ID Power Dissipation Package (pulsed) (A) @TA = 25OC (W) TO-243AA (SOT-89) 730 5.0 1.6 ID ja IDR IDRM ( C/W) ( C/W) (mA) (A) 15 78 730 5.0 jc O O Notes: ID (continuous) is limited by max rated Tj . Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 100 - - V VGS = 0V, ID = 2.0mA VGS(th) Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 1.0mA VGS(th) Conditions O Change in VGS(th) with temperature - - -4.5 IGSS Gate body leakage - - 100 nA VGS = 20V, VDS = 0V - - 10 A VGS = 0V, VDS = Max Rating IDSS Zero gate voltage drain current - - 1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C ID(ON) On-state drain current 1.2 2.0 - 3.0 6.0 - - - 15 - 1.5 2.0 - 1.0 1.5 RDS(ON) RDS(ON) Static drain-to-source on-state resistance Change in RDS(ON) with temperature - - 0.75 400 800 - GFS Forward transductance CISS Input capacitance - 70 125 COSS Common source output capacitance - 30 70 CRSS Reverse transfer capacitance - 15 25 td(ON) Turn-on delay time - - 10 Rise time - - 10 Turn-off delay time - - 20 Fall time - - 10 Diode forward voltage drop - - Reverse recovery time - 300 tr td(OFF) tf VSD trr mV/ C VGS = VDS, ID= 1.0mA A VGS = 5.0V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3.0V, ID = 250mA VGS = 4.5V, ID = 750mA VGS = 10V, ID = 750mA O %/ C VGS = 10V, ID = 750mA mmho VDS = 25V, ID = 1.0A pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 1.5A, RGEN = 25 1.8 V VGS = 0V, ISD = 1.5A - ns VGS = 0V, ISD = 1.5A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 10V 90% INPUT 0V PULSE GENERATOR 10% t(ON) td(ON) VDD t(OFF) tr 10% td(OFF) tF D.U.T. 10% INPUT 90% OUTPUT RGEN OUTPUT 0V RL 90% 2 TN2510 Typical Performance Curves 3 TN2510 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.1 10 V GS = 5V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 6 VGS = 10V 4 2 0 0.9 -50 0 50 100 0 150 2 4 6 8 10 ID (amperes) Tj ( C) Transfer Characteristics V(th) and RDS Variation with Temperature 10 VGS = 25V 1.2 TA = -55C 2.0 VGS(th) (normalized) ID (amperes) 8 6 25C 4 125C 1.1 1.6 V(th) @ 1mA 1.0 1.2 0.9 0.8 0.8 0.4 2 0 0 2 4 6 8 -50 10 0 50 VGS (volts) 100 150 Tj ( C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 100 f = 1MHz VGS (volts) C (picofarads) VDS = 10V 8 CISS 75 50 6 VDS = 40V 190 pF 4 COSS 25 2 CRSS 70pF 0 0 0 10 20 30 0 40 0.5 1.0 1.5 QG (nanocoulombs) VDS (volts) 4 2.0 2.5 RDS(ON) (normalized) RDS(ON) @ 5V, 0.75A TN2510 3-Lead TO-243AA (SOT-89) Package Outline (N8) Symbol MIN Dimensions (mm) A b b1 C D D1 E E1 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 e e1 1.50 BSC 3.00 BSC H L 3.94 0.89 - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2510 A020508 5