SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 FEBRUARY 1997
FEATURES
* 2A continuous current
* 140 VOLT VCEO
* Guaranteed hFE Specified up to 1A
PART MARKING DETAIL FZT600
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 140 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 4A
Continuous Collector Current IC2A
Power Dissipation Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 160 V IC
=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 140 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 10 V IE=100µA
Collector Cut-Off Current ICBO 0.01
10 µA
µA
VCB=140V
VCB=140V, Tamb
=100°C
Collector Cut-Off Current ICES 10 µAVCES
=140V
Emitter Cut-Off Current IEBO 0.1 µAVEB=8V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.75
0.85
1.1
1.2
V
V
IC
=0.5A, IB=5mA*
IC
=1A, IB=10mA*
Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 V IC
=1A, IB=10mA*
Base-Emitter Turn-On Voltage VBE(on) 1.5 1.7 V IC=1A, VCE=5V*
Static Forward
Current Transfer
Ratio
GROUP B
hFE 1k
2k
1k
100k
IC
=50mA, VCE
=10V*
IC
=0.5A, VCE
=10V*
IC
=1A, VCE
=10V*
5k
10k
5k
10k
20k
10k
100k
IC
=50mA, VCE
=10V*
IC
=0.5mA, VCE
=10V*
IC
=1A, VCE
=10V*
Transition Frequency fT150 250 MHz IC
=100mA, VCE
=10V
f=20MHz
Output Capacitance Cobo 10 15 MHz VCB=10V, f=1MHz
Switching Times Ton 0.75 µsIC
=0.5A, VCE
=10V
IB1=IB2=0.5mA
Toff 2.20 µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT600
3 - 197
C
C
E
B
C
C
E
B
FZT600
TYPICAL CHARACTERISTICS
VCE(sat) v IC
VBE(sat) v IC
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.001 0.01 100.1 1
4k
8k
12k
16k
20k
V
CE
=10V
Group A
Group B
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
1.2
1.3
1.4
1.5
0.01 0.1 110
1.1
V
CE
=5V
I
C
- Collector Current (Amps)
V - (Volts)
0
0.60 0.01 0.1 101
0.70
0.80
0.90
1.00
I
C
/I
B
=100
I
C
- Collector Current (Amps)
V - (Volts)
1.0 0.01 100.1 1
1.2
1.4
1.6
1.8
I
C
/I
B
=100
3 - 198
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 FEBRUARY 1997
FEATURES
* 2A continuous current
* 140 VOLT VCEO
* Guaranteed hFE Specified up to 1A
PART MARKING DETAIL FZT600
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 140 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 4A
Continuous Collector Current IC2A
Power Dissipation Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 160 V IC
=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 140 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 10 V IE=100µA
Collector Cut-Off Current ICBO 0.01
10 µA
µA
VCB=140V
VCB=140V, Tamb
=100°C
Collector Cut-Off Current ICES 10 µAVCES
=140V
Emitter Cut-Off Current IEBO 0.1 µAVEB=8V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.75
0.85
1.1
1.2
V
V
IC
=0.5A, IB=5mA*
IC
=1A, IB=10mA*
Base-Emitter Saturation Voltage VBE(sat) 1.7 1.9 V IC
=1A, IB=10mA*
Base-Emitter Turn-On Voltage VBE(on) 1.5 1.7 V IC=1A, VCE=5V*
Static Forward
Current Transfer
Ratio
GROUP B
hFE 1k
2k
1k
100k
IC
=50mA, VCE
=10V*
IC
=0.5A, VCE
=10V*
IC
=1A, VCE
=10V*
5k
10k
5k
10k
20k
10k
100k
IC
=50mA, VCE
=10V*
IC
=0.5mA, VCE
=10V*
IC
=1A, VCE
=10V*
Transition Frequency fT150 250 MHz IC
=100mA, VCE
=10V
f=20MHz
Output Capacitance Cobo 10 15 MHz VCB=10V, f=1MHz
Switching Times Ton 0.75 µsIC
=0.5A, VCE
=10V
IB1=IB2=0.5mA
Toff 2.20 µs
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT600
3 - 197
C
C
E
B
C
C
E
B
FZT600
TYPICAL CHARACTERISTICS
VCE(sat) v IC
VBE(sat) v IC
I
C
- Collector Current (Amps)
hFE v IC
h- Gain
0.001 0.01 100.1 1
4k
8k
12k
16k
20k
V
CE
=10V
Group A
Group B
I
C
- Collector Current (Amps)
VBE(on) v IC
V - (Volts)
1.2
1.3
1.4
1.5
0.01 0.1 110
1.1
V
CE
=5V
I
C
- Collector Current (Amps)
V - (Volts)
0
0.60 0.01 0.1 101
0.70
0.80
0.90
1.00
I
C
/I
B
=100
I
C
- Collector Current (Amps)
V - (Volts)
1.0 0.01 100.1 1
1.2
1.4
1.6
1.8
I
C
/I
B
=100
3 - 198
