1
Light modulation photo IC
Fewer detection errors even under disturbance
background light
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
www.hamamatsu.com
Parameter Symbol S4282-51, S6986, S10053 S6809, S6846, S7136/-10 Unit
Supply voltage Vcc -0.5 to +16 V
Output voltage Vo -0.5 to +16 V
Output current Io 50 mA
Cathode output voltage Vcath -0.5 to +16 V
Cathode output current Icath 70 mA
Power dissipation*1P 250 mW
Operating temperature Topr -25 to +60 °C
Storage temperature Tstg -40 to +100 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*1: Power dissipation decreases at a rate of 3.3 mW/°C above Ta=25 °C
Absolute maximum ratings (Ta=25 °C)
These light modulation photo ICs were developed for optical synchronous detection under disturbance background light.
A photodiode, preamplifier, comparator, oscillator, LED driver and signal processing circuit, etc. are all integrated on
a monolithic photo IC chip. Optical synchronous type photoreflectors and photointerrupters, which less susceptible to
disturbance background light, can be easily con gured by just connecting an external LED to this photo IC. Our unique
circuit design achieves an allowable background light level of 10000 lx typ. (S4282-51, S6986, S10053) and a minimum
detection level of 0.2 W/mm2 typ. (S6809, S6846, S7136/-10).
Paper detection in of ce machine
(copiers, fax machines, etc.)
Optical switches
Small hysteresis (S6809)
Small SMD package (S10053)
Large allowable background light level
S4282-51, S6986, S10053: 10000 lx typ.
S6809, S6846, S7136/-10 : 3000 lx typ.
Minimum detection level
S4282-51, S6986, S10053: 0.7 μW/mm2 typ.
S6809, S6846, S7136/-10 : 0.2 μW/mm2 typ.
Digital output (Output appears “L” by light input.)
Features Applications
Products other than the S10053 do not support lead-free soldering. For details on re ow soldering conditions for surface mount
types, please contact our sales of ce.
2
Light modulation photo IC
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
Wavelength (nm)
Relative sensitivity (%)
400 600 800 1000 1200
0
20
40
60
80
100 (Ta=25 °C)
Wavelength (nm)
Relative sensitivity (%)
400 600 800 1000 1200
0
20
40
60
80
100 (Ta=25 °C)
KPICB0001EB
KPICB0002EA
S4282-51, S6986, S10053
S6809, S6846, S7136/-10
Spectral response (typical example)
3
Light modulation photo IC
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
Vcc
Cathode
(LED)
GND
Vcc
Vout
GND
Cathode Output
10 k
Vcc
Cathode
(LED)
GND
Vcc
Vout
GND
Cathode Output
KPICC0009EA
KPICC0010EA
Parameter Symbol Condition
S4282-51, S6986, S10053 S6809, S6846, S7136/-10
Unit
Output: built-in pull-up resistor*2
Cathode: constant current drive
Output: open collector*3
Cathode: open collector drive
Min. Typ. Max. Min. Typ. Max.
Supply voltage Vcc 4.5 -164.5 -16V
Current consumption Icc Vo, LED terminals
open - 4 11 - 4 11 mA
Low level
output voltage VOL IOL=16 mA - 0.2 0.4 - 0.2 0.4 V
High level
output voltage VOH
4.9 - - V
4.7 kΩ between
Vcc and Vo 4.9 - - V
Low level
output voltage Vcath Icath=40 mA - - 0.8 V
Low level
output current Icath Vcath=1.2 V 15 35 60 mA
Pulse cycle Tp 65 130 220 65 130 220 s
Pulse width Tw 4 8 13.7 4 8 13.7 s
HL threshold light level
EHL λ=940 nm
No background light
- 0.7 2 - 0.2 1.0
W/mm
2
Hysteresis -0.45 0.65 0.95
0.45 0.65 0.95
-
0.65
(S6809)
0.8
(S6809)
0.95
(S6809)
Frequency response f0.5 1.25 - 0.5 1.25 - kHz
Allowable background
light level Ex
Signal light: 5 W/mm2,
λp=940 nm
Background light:
A” light source
5000 10000 - 2000 3000 - lx
*2:
Electrical and optical characteristics (Ta=25 °C, Vcc=5 V)
*3:
Output
Cathode
4
Light modulation photo IC
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
Constant
voltage
Buffer
Signal
processing
circuit
Timing
generator
Oscillator
LED
Driver
Output
circuit
GND
Cathode
(LED)
Vout
Vcc
Comparator
Preamp
PD
Vref
Truth table
Input Output level
Light on
Light off
low
high
KPICC0002EA
Block diagram and internal functions
(a) Oscillator and timing signal generator
The oscillator produces a reference oscillation output by charging and discharging the built-in capacitor with constant current. The
oscillation output is fed to the timing signal generator, which then creates LED drive pulses and various timing pulses for digital sig-
nal processing.
(b) LED driver circuit
This circuit drives an external LED using the LED drive pulses created by the timing signal generator. The duty cycle is 1/16.
(c) Photodiode and preampli er circuit
The photodiode is formed on the same monolithic chip. A photocurrent generated in the photodiode is converted to a voltage by
a preampli er circuit. The preampli er circuit uses an AC ampli er to expand the dynamic range versus DC or low-frequency back-
ground light, without impairing signal detection sensitivity.
(d) Capacitive coupling, buffer ampli er and reference voltage generator
Capacitive coupling removes low-frequency noise and also cancels the DC offset in the preampli er. The buffer ampli er boosts the
signal up to the comparator level, and the reference voltage generator produces a comparator level voltage.
(e) Comparator circuit
The comparator circuit has a hysteresis function to prevent chattering caused by small uctuations in the input light.
(f) Signal processing circuit
The signal processing circuit consists of a gate circuit and digital integrator circuit. The gate circuit discriminates input pulses during
synchronous detection, to prevent operational errors caused by asynchronous background light. Background light which is synchro-
nized with the signal detection timing cannot be eliminated by the gate circuit, but is canceled out by the digital integrator circuit at
the latter stage.
(g) Output circuit
This circuit serves as an output buffer for the signal processing circuit and outputs the signal to an external circuit.
5
Light modulation photo IC
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
5.2 ± 0.3
(Including burr)
Center of
photosensitive area
5.2 ± 0.3
(Including burr)
(Specified at lead root)
Photosensitive
surface
Vout
GND
Cathode (LED)
Vcc
2.0
(Depth 0.15 max.)
1.0
(Depth 0.15 max.)
2.5 ± 0.2
5.0
2.05 ± 0.2
16.5 ± 1.0
(0.8) (1.0)
1.27 1.27 1.27
10°
0.7 ± 0.15
10°
0.25+0.15
-0.1
0.55
0.45
1.0
2.0
Tolerance unless otherwise
noted: ±0.1, ±2°
Shaded area indicates burr.
Values in parentheses are not
guaranteed, but for reference.
5.0
KPICA0008EC
S6809, S6846, S6986
Dimensional outlines (unit: mm)
6
Light modulation photo IC
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
0.5
4.6 ± 0.2
(Including burr)
Center of
photosensitive area
4.5*
0.7
3.1 ± 0.4
1.0
2.0
5.4*
2.54
5.5
5.6 ± 0.2
(Including burr)
10°
5.75 ± 0.2
0.7 ± 0.15
Photosensitive
surface
4.5 ± 0.4
4.5*
7.5 ± 5°
0.25
Cathode (LED)
Vcc
Vout
GND (Short lead)
Tolerance unless otherwise
noted: ±0.1, ±2°
Shaded area indicates burr.
Chip position accuracy
with respect to package
dimensions marked *
X≤±0.2
Y≤±0.2
2.0
(Depth 0.15 max.)
Tolerance unless otherwise noted: ±0.1, ±2°
Shaded area indicates burr.
Chip position accuracy
with respect to package
dimensions marked *
X≤±0.2
Y≤±0.2
4.6 ± 0.2
(Including burr)
Center of
photosensitive area
Index mark
0.6
0.5
4.5*
1.5 ± 0.4 1.5 ± 0.4
2.54
5.6 ± 0.2
(Including burr)
5.4*
10°
5.5*
0.7 ± 0.15
1.0
2.0
7.5 ± 0.3
0.7 ± 0.3 0.7 ± 0.3
0.25
0.1 ± 0.1
Cathode (LED)
Vcc
Vout
GND
Photosensitive
surface
KPICA0009EB
KPICA0034JB
S4282-51, S7136
S7136-10
7
Light modulation photo IC
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
0.3
0.4
3.2 ± 0.2
(Including burr)
5.0 ± 0.3*
2.8
2.4
2.9
1.3
0.75
0.5
0.05
3.0*
0.45 ± 0.3 0.45 ± 0.3
1.0 ± 0.4 1.0 ± 0.4
0.8
4.2 ± 0.2
(Including burr)
3.8
3.4
Mirror area range
0.80.80.8
3.9
4.0*
Center of
photosensitive area
0.15
0.1 ± 0.1
Vout
(GND)
(GND)
(GND)
GND
Cathode (LED)
(GND)
(GND) (Short lead)
(GND)
Vcc
Mirror area range
(GND) terminals should be connected to
GND terminal on board.
Tolerance unless otherwise
noted: ±0.1
Shaded area indicates burr.
Chip position accuracy
with respect to the package
dimensions marked *
X≤±0.2
Y≤±0.2
Photosensitive
surface
KPICA0076EC
S10053
Cat. No. KPIC1002E08 Mar. 2013 DN 8
Light modulation photo IC
S4282-51, S6809, S6846, S6986, S7136/-10, S10053
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of March, 2013.
Time
Temperature
300 °C
220 °C
190 °C
170 °C
Preheat
70 to 90 s
Soldering
40 s max.
240 °C max.
KPICB0171EA
Measured example of temperature profile with our hot-air reflow oven for product testing (S10053)
The S10053 supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 24 hours.