DMN3026LVTQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION ADVANCED INFORMATION Product Summary BVDSS 30V Features and Benefits RDS(ON) Max ID TA = +25C 23m @ VGS = 10V 6.6A 30m @ VGS = 4.5V 5.8A Description Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data DC-DC Converters Power management functions Backlighting Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (Approximate) TSOT26 Top View D 1 6 D D 2 5 D G 3 4 S Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number DMN3026LVTQ-7 DMN3026LVTQ-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 1 of 8 www.diodes.com August 2015 (c) Diodes Incorporated DMN3026LVTQ N5L Date Code Key Year Code Month Code 2010 X Jan 1 ... ... Feb 2 2014 B Mar 3 N5L = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM ADVANCE INFORMATION ADVANCED INFORMATION Marking Information 2015 C Apr 4 2016 D May 5 2017 E Jun 6 2018 F Jul 7 2019 G Aug 8 2020 H Sep 9 Oct O 2021 I 2022 J Nov N Dec D Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS Continuous Drain Current (Note 7) VGS = 10V Value 30 20 Units V V Steady State TA = +25C TA = +70C ID 6.6 5.3 A t<10s TA = +25C TA = +70C ID 8.5 6.8 A IS 3.0 A IDM 35 A Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10s pulse, duty cycle = 1%) Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Symbol TA = +25C TA = +70C Steady state t<10s TA = +25C TA = +70C Steady state t<10s Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 PD RJA PD RJA RJC TJ, TSTG 2 of 8 www.diodes.com Value 1.2 0.8 100 60 1.5 1.0 83 50 14.5 -55 to +150 Units W C/W C/W W C/W C/W C/W C August 2015 (c) Diodes Incorporated DMN3026LVTQ ADVANCE INFORMATION ADVANCED INFORMATION Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 30 VGS = 0V, ID = 250A IDSS 1.0 V Zero Gate Voltage Drain Current A VDS = 30V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) 1.0 1.5 19 2.0 23 V VDS = VGS, ID = 250A 22 30 m VGS = 10V, ID = 6.5A VGS = 4.5V, ID = 6.0A Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance VSD 0.7 1.2 V VGS = 0V, IS = 1.0A Ciss Coss 643 Output Capacitance pF Reverse Transfer Capacitance Crss Gate Resistance RG VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg 49 2.5 5.7 VDS = 15V, VGS = 0V f = 1.0MHz Total Gate Charge (VGS = 10V) Gate-Source Charge Qg Qgs 12.5 1.7 nC VDS = 15V, ID = 4.0A nS VGS = 10V, VDD = 15V, RG = 6.0, ID= 6.5A nS IF = 6.5A, dI/dt = 100A/s nC IF = 6.5A, dI/dt = 100A/s 65 Gate-Drain Charge Qgd 1.8 Turn-On Delay Time tD(on) 2.2 Turn-On Rise Time Turn-Off Delay Time tr tD(off) tf 2.5 12.1 3.0 Body Diode Reverse Recovery Time trr 6.5 Body Diode Reverse Recovery Charge Qrr Turn-Off Fall Time Notes: 1.7 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 3 of 8 www.diodes.com August 2015 (c) Diodes Incorporated DMN3026LVTQ 30 20 VGS = 10V 20 16 VGS = 3V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4.V VGS = 3.5V 15 VGS = 2.5V 10 14 12 10 8 TA = 150C 6 T A = 85C 4 5 TA = 125C TA = 25C 2 TA = -55C VGS = 2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.03 0.025 VGS = 4.5V 0.02 VGS = 10V 0.015 0.01 1 0 6 11 16 21 26 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.1 0.08 0.06 0.04 ID = 6.5A 0.02 31 ID = 6A 0 0 0.05 4 8 12 16 VGS, GATE-SOURCE CURRENT (V) Figure 4 Typical Transfer Characteristics 20 1.8 VGS = 4.5V VGS = 10V ID = 6.5A 0.045 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION ADVANCED INFORMATION 25 VDS = 5.0V 18 VGS = 5V TA = 150C 0.04 TA = 125C 0.035 TA = 85C 0.03 0.025 TA = 25C 0.02 TA = -55C 0.015 1.6 1.4 VGS = 4.5V ID = 6A 1.2 1 0.8 0.01 0.005 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 20 4 of 8 www.diodes.com 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature August 2015 (c) Diodes Incorporated DMN3026LVTQ VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 0.04 VGS = 4.5V ID = 6A 0.03 VGS = 10 V ID = 6.5A 0.02 0.01 1.8 1.6 ID = 1mA ID = 250A 1.4 1.2 1 0.8 0 -50 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 20 CT, JUNCTION CAPACITANCE (pF) 18 IS, SOURCE CURRENT (A) 16 14 T A = 150C 12 10 TA = 125C 8 TA = 25C TA = 85C 6 4 TA = -55C 2 0 0 f = 1MHz 1000 Ciss 100 Coss Crss 10 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 100 ID, DRAIN CURRENT (A) RDS(on) Limited VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION ADVANCED INFORMATION 0.05 VDS = 15V ID = 4 A 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 5 of 8 www.diodes.com 10 PW = 10s DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150C TA = 25C PW = 100s VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 August 2015 (c) Diodes Incorporated DMN3026LVTQ 1 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION D = 0.9 D = 0.7 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 97C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 6 of 8 www.diodes.com 100 1000 August 2015 (c) Diodes Incorporated DMN3026LVTQ Package Outline Dimensions ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TSOT26 TSOT26 Dim Min Max Typ A -- 1.00 -- A1 0.01 0.10 -- A2 0.84 0.90 -- D -- -- 2.90 E -- -- 2.80 E1 -- -- 1.60 b 0.30 0.45 -- c 0.12 0.20 -- e -- -- 0.95 e1 -- -- 1.90 L 0.30 0.50 -- L2 -- -- 0.25 0 8 4 1 4 12 -- All Dimensions in mm D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 C Y1 Y (6x) X (6x) DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 7 of 8 www.diodes.com August 2015 (c) Diodes Incorporated DMN3026LVTQ IMPORTANT NOTICE ADVANCE INFORMATION ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2014, Diodes Incorporated www.diodes.com DMN3026LVTQ Document number: DS38142 Rev. 1 - 2 8 of 8 www.diodes.com August 2015 (c) Diodes Incorporated