BLT80,115 - NXP - Product.Network

DATA SH EET

Product speciﬁcation

Supersedes data of May 1992 1996 May 09

DISCRETE SEMICONDUCTORS

BLT80

UHF power transistor

1996 May 09 2

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

FEATURES

•SMD encapsulation

•Gold metallization ensures excellent reliability.

APPLICATIONS

•Hand-held radio equipment in the 900 MHz

communication band.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a

plastic SOT223 SMD package.

PINNING - SOT223

PIN SYMBOL DESCRIPTION

1 e emitter

2 b base

3 e emitter

4 c collector Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM043 - 1

123

Top view

QUICK REFERENCE DATA

RF performance at Ts≤60 °C in a common emitter test circuit (see Fig.7).

MODE OF OPERATION f

(MHz) VCE

(V) PL

(W) Gp

(dB) ηC

(%)

CW, class-B narrow band 900 7.5 0.8 ≥6≥60

1996 May 09 3

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

2. Transistor mounted on a printed-circuit board measuring 40 ×40 ×1 mm, collector pad 35 ×17 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCEO collector-emitter voltage open base −10 V

VEBO emitter-base voltage open collector −3V

Ccollector current (DC) −250 mA

IC(AV) average collector current −250 mA

ICM peak collector current f >1 MHz −750 mA

Ptot total power dissipation Ts= 131 °C; note 1 −2W

stg storage temperature −65 +150 °C

Tjoperating junction temperature −175 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ptot =2W; T

s= 131 °C; note 1 22 K/W

Rth j-a thermal resistance from junction to ambient Ptot =2W; T

amb =25°C; note 2 85 K/W

Fig.2 DC SOAR.

Ts= 131 °C.

handbook, halfpage

10−2

10−1

11010

MRA780 - 1

(A)

VCE (V)

1996 May 09 4

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

Note

1. Measured under pulsed conditions: tp≤200 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V(BR)CBO collector-base breakdown voltage open emitter; IC= 2.5 mA 20 −V

V(BR)CEO collector-emitter breakdown voltage open base; IC=5mA 10 −V

(BR)EBO emitter-base breakdown voltage open collector; IE= 0.5 mA 3 −V

ICES collector leakage current VCE = 10 V; VBE =0 −0.1 mA

hFE DC current gain VCE =5V; I

C= 150 mA; note 1;

see Fig.3 25 −

Cccollector capacitance VCB = 7.5 V; IE=i

e= 0; f = 1 MHz;

see Fig.4 −3.5 pF

Cre feedback capacitance VCE = 7.5 V; IC= 0; f = 1 MHz −2.5 pF

Fig.3 DC current gainas a function of collector

current; typical values.

VCE = 7.5 V; tp≤200 µs; δ≤0.02; Tj=25°C.

handbook, halfpage

100

0 200 400 600 800

MRA776

hFE

IC (mA)

Fig.4 Collector capacitance as a function of

collector-base voltage; typical values.

IE=i

e= 0; f = 1 MHz; Tj=25°C.

handbook, halfpage

0 4 8 12 16 20

MRA773

(pF)

VCB (V)

1996 May 09 5

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

APPLICATION INFORMATION

RF performance at Ts≤60 °C in a common emitter test circuit (see note 1 and Fig.7).

Note

1. Ts is the temperature at the soldering point of the collector pin.

Ruggedness in class-AB operation

The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the

following conditions: f = 900 MHz; VCE = 9 V; PL= 0.8 W; Ts≤60 °C.

MODE OF OPERATION f

(MHz) VCE

(V) PL

(W) Gp

(dB) ηC

(%)

CW, class-B narrow band 900 7.5 0.8 ≥6≥60

typ. 8 typ. 67

Fig.5 Power gain and collector efﬁciency as

functions of load power; typical values.

Class-B; f = 900 MHz; VCE = 7.5 V; Ts≤60 °C.

handbook, halfpage

100

0 0.3 0.6 0.9 1.2 1.5

MRA774

ηC

(%)

(dB)

PL (W)

Fig.6 Load power as a function of drive

power; typical values.

Class-B; f = 900 MHz; VCE = 7.5 V; Ts≤60 °C.

handbook, halfpage

0.3

0.6

0.9

1.2

1.5

0 200 400 600

MRA779

(W)

PD (mW)

1996 May 09 6

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

Test circuit information

List of components used in test circuit (see Figs 7 and 8)

Notes

1. American Technical Ceramics type 100A or capacitor of same quality.

2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr= 2.2); thickness

1⁄16"; thickness of the copper sheet 35 µm.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C8 multilayer ceramic chip capacitor; note 1 100 pF

C2, C3 type 9105 Voltronix KM10 trimmer 0.6 to 10 pF

C4 multilayer ceramic chip capacitor; note 1 220 pF

C5, C7 ﬁlm dielectric trimmer 1.4 to 5.5 pF 2222 809 09001

C6 multilayer ceramic chip capacitor; note 1 1 nF

L1 stripline; note 2 50 Ωlength 13 mm

width 4.85 mm

L2, L7 1 turn 0.4 mm copper wire on

grade 3B core 4330 030 32221

L3, L8 6 turns enamelled 0.8 mm copper wire internal dia. 3 mm

L4, L9 grade 3B Ferroxcube wideband

HF choke 4312 020 36640

L5 stripline; note 2 50 Ωlength 8.4 mm

width 4.85 mm

L6 stripline; note 2 50 Ωlength 20 mm

width 4.85 mm

L10 stripline; note 2 50 Ωlength 21 mm

width 4.85 mm

R1, R2 metal ﬁlm resistor 10 Ω, 0.25 W

Fig.7 Common emitter test circuit for class-B operation at 900 MHz.

handbook, full pagewidth

MBB649

,,,

50 Ω

input 50 Ω

output

VCC

C6C4 R2

L10

DUT

C1 L5

C7C3

,,,

1996 May 09 7

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.

Dimensions in mm.

The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.

handbook, full pagewidth

strap

rivets

(14x)

mounting

screws

(8x)

140

MBB648

L7 L10

C7C5

C3C2

VCC

C8C1 L5

L3 L8

1996 May 09 8

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

Fig.9 Input impedance as a function of frequency

(series components); typical values.

Class-B; VCE = 7.5 V; PL= 0.8 W; Ts≤60 °C.

handbook, halfpage

800 840 880 920 960 1000

MRA777

f (MHz)

(Ω)

Fig.10 Load impedance as a function of frequency

(series components); typical values.

Class-B; VCE = 7.5 V; PL= 0.8 W; Ts≤60 °C.

handbook, halfpage

800 840 880 920 960 1000

f (MHz)

MRA778

(Ω) RL

Fig.11 Power gain as a function of

frequency; typical values.

Class-B; VCE = 7.5 V; PL= 0.8 W; Ts≤60 °C.

handbook, halfpage

800 840 880 920 960 1000

f (MHz)

MRA775

(dB)

Fig.12 Definition of transistor impedance.

handbook, halfpage

MBA451

ZiZL

1996 May 09 9

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

PACKAGE OUTLINE

Fig.13 SOT223.

Dimensions in mm.

handbook, full pagewidth

6.7

6.3

0.95

0.85

2.3 0.80

0.60

4.6

3.1

2.9

3.7

3.3 7.3

6.7

B0.2 A

1.80

max

16o

max

10o

max

0.10

0.01

0.32

0.24

123

MSA035 - 1

(4x)

0.1 B

S seating plane 0.1 S

1996 May 09 10

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1996 May 09 11

Philips Semiconductors Product speciﬁcation

UHF power transistor BLT80

NOTES

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127061/1200/02/pp12 Date of release: 1996 May 09

Document order number: 9397 750 00836