A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 65 V
BVCER IC = 50 mA RBE = 10 Ω 65 V
BVEBO IE = 4.0 mA 3.5 V
ICES VCE = 50 V 6.0 mA
hFE VCE = 5.0 V IC = 1.0 A 10 ---
PG
ηC VCC = 50 V PIN = 9.0 W f = 1090 MHz 9.2
48
9.7
56
dB
%
Pulse Width = 32 µsec, Duty Cycle = 2%
NPN SILICON RF POWER TRANSISTOR
AM1011-075
DESCRIPTION:
The ASI AM1011-075 is a high power
Class C transistor designed for L-Band
Avionics pulse output and driver
applications.
FEATURES:
• Internal Input/Output Matching Networks
• PG = 9.2 dB min. at 75 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 5.4 A
VCC 55 V
PDISS 175 W @ TC = 25 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θJC 0.86 °C/W
PACKAGE STYLE .400 2L FLG (A)
MINIMUM
inches / m m
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / mm
.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00 .131 / 3.33
.135 / 3.43 .145 / 3.68
.072 / 1.83.052 / 1.32
P .230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03 .407 / 10.34
.890 / 22.61 .910 / 23.11
