IL202
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Feb-18 1Document Number: 83613
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, Low Input Current,
With Base Connection
DESCRIPTION
The IL202 is optically coupled pairs employing a gallium
arsenide infrared LED and a silicon NPN phototransistor.
Signal information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical
isolation between input and output. The IL202 can be used
to replace relays and transformers in many digital interface
applications, as well as analog applications such as CRT
modulation.
FEATURES
•Guaranteed at I
F = 1.0 mA
High collector emitter voltage, BVCEO = 70 V
Long term stability
Industry standard DIP package
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
UL file no. E52744 system code H, double protection
cUL tested to CSA 22.2 bulletin 5A
DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5
(pending), available with option 1
BSI: EN 60065:2002, EN 60950-1:2006
•FIMKO
1
2
3
6
5
4
B
C
E
A
C
NC
DIP
ORDERING INFORMATION
IL20#-X00#T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
VDE, UL, cUL, BSI, FIMKO 125 to 250
DIP-6 IL202-X001
7.62 mm
DIP-6
IL202
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Feb-18 2Document Number: 83613
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage VR6.0 V
Forward continuous current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 70 V
Emitter collector breakdown voltage BVECO 7.0 V
Collector base breakdown voltage BVCBO 70 V
Power dissipation Pdiss 200 mW
Derate linearly from 25 °C 2.6 mW/°C
COUPLER
Isolation test voltage t = 1.0 s VISO 5300 VRMS
Total package dissipation (LED and detector) Ptot 250 mW
Derate linearly from 25 °C 3.3 mW/°C
Creepage distance 7.0 mm
Clearance distance 7.0 mm
Storage temperature Tstg -55 to +150 °C
Operating temperature Tamb -55 to +100 °C
Lead soldering time 260 °C 10 s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 20 mA VF-1.21.5V
IF = 1.0 mA VF-1.01.2V
Breakdown voltage IR = 10 μA VF6.0 20 V
Reverse current VR = 6.0 V IR0.1 10 μA
OUTPUT
DC forward current gain VCE = 5.0 V, IC = 100 μA hFE 100 200 -
Collector emitter breakdown voltage IC = 100 μA BVCEO 70 - - V
Emitter collector breakdown voltage IE = 100 μA BVECO 7.0 10 - V
Collector base breakdown voltage IC = 10 μA BVCBO 70 90 - V
Leakage current collector emitter VCE = 10 V, TA = 25 °C ICEO - 5.0 50 nA
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio (collector to base) IF = 10 mA, VCB = 10 V CTRCB 15 - - %
Collector emitter saturation voltage IF = 10 mA, IC = 2.0 mA VCEsat --0.4V
DC current transfer ratio IF = 10 mA, VCE = 10 V IL202 CTRDC 125 200 250 %
IF = 1.0 mA, VCE = 10 V IL202 CTRDC 30 - - %
IL202
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Feb-18 3Document Number: 83613
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Normalized Non-Saturated and
Saturated CTR vs. LED Current
Fig. 3 - Normalized Non-Saturated and
Saturated CTR vs. LED Current
Fig. 4 - Normalized Non-Saturated and
Saturated CTR vs. LED Current
Fig. 5 - Normalized Non-Saturated and
Saturated CTR vs. LED Current
Fig. 6 - Collector Emitter Current vs. Temperature and LED Current
100101
0.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF-Forward Current (mA)
VF- Forward Voltage (V)
T
A= - 55 °C
T
A= 100 °C
T
A= 25 °C
1001010.1
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
I
F
-LED Current (mA)
NCTR - Normalized CTR
Normalized to:
VCE = 10 V, IF= 10 mA
TA= 25 °C
CTRce(sat) VCE = 0.4 V
1001010.1
0.0
0.5
1.0
1.5
NCTR(SAT)
NCTR
IF- LED Current (mA)
NCTR - Normalized CTR
Normalized to:
V
CE = 10 V, IF= 10 mA, TA= 25 °C
TA= 50 °C
CTRce(sat) VCE = 0.4 V
1001010.1
0.0
0.5
1.0
1.5
I
F
-LED Current (mA)
NCTR(SAT)
NCTR
Normalized to:
VCE = 10 V, IF= 10 mA
TA= 25 °C
CTRce(sat) VCE = 0.4 V
TA= 70 °C
NCTR - Normalized CTR
0.1 1 10 100
1.5
1.0
0.5
0.0
NCTR - Normalized CTR
NCTR(SAT)
NCTR
Normalized to:
V
CE
= 10 V, I
F
= 10 mA, T
A
= 25 °C
CTRce(sat) V
CE
= 0.4 V
T
A
= 85 °C
IF-LED Current (mA)
6050403020100
0
5
10
15
20
25
30
35
50 °C
70 °C
85 °C
I
CE
- Collector Current (mA)
25 °C
I
F
-LED Current (mA)
IL202
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Feb-18 4Document Number: 83613
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Collector Emitter Leakage Current vs.Temperature
Fig. 8 - Normalized CTRcb vs. LED Current and Temperature
Fig. 9 - Collector Base Photocurrent vs. LED Current
Fig. 10 - Normalized Photocurrent vs. IF and Temperature
Fig. 11 - Normalized Saturated hFE vs. Base Current and
Temperature
Fig. 12 - Propagation Delay vs. Collector Load Resistor
100
8060
40
20
0
- 20
10
10
10
10
10
10
10
10
-2
-1
0
1
2
3
4
5
T
A
- Ambient Temperature (°C)
I
CEO
- Collector-Emitter (nA)
VCE = 10 V
Typical
0.1 1 10 100
0.0
0.5
1.0
1.5
50 °C
70 °C
NCTR
cb
- Normalized CTRcb
Normalized to:
IF= 10 mA
Vcb = 9.3 V
Ta= 25 °C
25 °C
I
F-
LED Current (mA)
100
1010.1
0.01
0.1
1
10
100
1000
I
cb
- Collector Base
Photocurrent (µA)
I
cb
= 1.0357 * IF ^ 1.3631
Ta= 25 °C
I
F
-
LED Current (mA)
100
10
1
0.1
0.01
0.1
1
10
Normalized Photocurrent
Normalized to:
IF = 10 mA, Ta = 25 °C
IF-LED Current (mA)
NIB-Ta = - 20 °C
NIb,Ta = 25 °C
NIb,Ta = 50 °C
NIb,Ta = 70 °C
1 10 100 1000
0.0
0.5
1.0
1.5
2.0
25 °C
50 °C
70 °C
I
b
- Base Current (µA)
Nh
FE(sat)
- Normalized
Saturated h
FE
VCE = 0.4 V
I
b
= 20 µA
VCE = 10 V
Ta = 25 °C
Normalized to:
RL - Collector Load Resistor (kΩ)
1001010.1
1
10
100
1000
1.0
1.5
2.0
2.5
tpLH
tpHL
tpLH - Propagation Delay (µs)
tpHL - Propagation Delay (µs)
Ta = 25 °C, IF = 10 mA
VCC = 5 V, Vth = 1.5 V
IL202
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Feb-18 5Document Number: 83613
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Normalized Non-Saturated and
Saturated CTRCE vs. LED Current
Fig. 14 - Normalized Non-Saturated hFE vs. Base Current and
Temperature
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING (example)
Notes
Only option 1 is reflected in the package marking
The VDE logo is only marked on option 1 parts
Tape and reel suffix (T) is not part of the package marking
1 10 100 1000
0.4
0.6
0.8
1.0
1.2
Ib - Base Current (µA)
NhFE - Normalized hFE
Ib = 20 µA
VCE = 10 V
T
a = 25 °C
- 20 °C
25 °C
50 °C
70 °C Normalized to:
ISO method A
0.25 typ.
2.95 ± 0.5
7.62 typ.
18°
3° to 9°
7.62 to 8.81
i178004-2
6.4 ± 0.1
8.6 ± 0.1
Pin one ID
6
5
4
12
3
3.555 ± 0.255
0.8 min.
0.85 ± 0.05
2.54 typ.
1 min.
0.5 ± 0.05
4° typ.
1.2 ± 0.1
Option 9
8 min.
0.51
1.02
7.62 ref.
9.53
10.03
0.25 typ.
0.102
0.249
15° max.
IL202
V YWW H 68
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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