IL202
www.vishay.com Vishay Semiconductors
Rev. 1.7, 06-Feb-18 2Document Number: 83613
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage VR6.0 V
Forward continuous current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 70 V
Emitter collector breakdown voltage BVECO 7.0 V
Collector base breakdown voltage BVCBO 70 V
Power dissipation Pdiss 200 mW
Derate linearly from 25 °C 2.6 mW/°C
COUPLER
Isolation test voltage t = 1.0 s VISO 5300 VRMS
Total package dissipation (LED and detector) Ptot 250 mW
Derate linearly from 25 °C 3.3 mW/°C
Creepage distance 7.0 mm
Clearance distance 7.0 mm
Storage temperature Tstg -55 to +150 °C
Operating temperature Tamb -55 to +100 °C
Lead soldering time 260 °C 10 s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 20 mA VF-1.21.5V
IF = 1.0 mA VF-1.01.2V
Breakdown voltage IR = 10 μA VF6.0 20 V
Reverse current VR = 6.0 V IR0.1 10 μA
OUTPUT
DC forward current gain VCE = 5.0 V, IC = 100 μA hFE 100 200 -
Collector emitter breakdown voltage IC = 100 μA BVCEO 70 - - V
Emitter collector breakdown voltage IE = 100 μA BVECO 7.0 10 - V
Collector base breakdown voltage IC = 10 μA BVCBO 70 90 - V
Leakage current collector emitter VCE = 10 V, TA = 25 °C ICEO - 5.0 50 nA
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio (collector to base) IF = 10 mA, VCB = 10 V CTRCB 15 - - %
Collector emitter saturation voltage IF = 10 mA, IC = 2.0 mA VCEsat --0.4V
DC current transfer ratio IF = 10 mA, VCE = 10 V IL202 CTRDC 125 200 250 %
IF = 1.0 mA, VCE = 10 V IL202 CTRDC 30 - - %