AON7700
30V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 40A
R
DS(ON)
(at V
GS
=10V) < 7.2mΩ
R
DS(ON)
(at V
GS
=4.5V) < 8.6mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
SRFET
TM
AON7700 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R
DS(ON)
,and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
Drain-Source Voltage
30
SRFET
TM
G
D
S
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Top View
1
2
3
4
8
7
6
5
DFN 3x3 EP
Top View Bottom View
Pin 1
V
DS
V
GS
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
475
4.8
T
C
=25°C
T
C
=100°C
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
26
2
T
A
=25°C
Power Dissipation
B
P
D
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
12
V
°C
I
DSM
A
T
A
=70°C
Continuous Drain
Current
14
16
A17
V±12Gate-Source Voltage
Drain-Source Voltage
30
°C/W
R
θJA
30
60
100
40
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
A
T
A
=25°C
Pulsed Drain Current
C
Continuous Drain
Current
G
I
D
40
28
Parameter Typ Max
T
C
=25°C
3.1
10
T
C
=100°C
Junction and Storage Temperature Range -55 to 150
Rev 3: May. 2012
www.aosmd.com Page 1 of 7
AON7700
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 0.5
T
J
=125°C 100
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.2 1.7 2.2 V
I
D(ON)
100 A
5.5 7.2
T
J
=125°C 9 11
6.6 8.6 mΩ
g
FS
45 S
V
SD
0.4 0.7 V
I
S
30 A
C
iss
1690 pF
C
oss
175 pF
C
rss
120 pF
R
g
0.7 1.4 2.1 Ω
Q
g
(10V) 31 44 nC
Q
g
(4.5V) 14 20 nC
Q
gs
4 nC
Q
gd
5 nC
t
D(on)
6 ns
t
9
ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=10mA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=12A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
mA
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=12A
V
GS
=4.5V, I
D
=10A
Forward Transconductance
Diode Forward Voltage
Turn-On Rise Time
V
=10V, V
=15V, R
=1.25
Ω
,
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=12A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
t
r
9
ns
t
D(off)
27 ns
t
f
4 ns
t
rr
7ns
Q
rr
8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=500A/µs
Turn-On Rise Time
Turn-Off DelayTime
I
F
=12A, dI/dt=500A/µs
V
GS
=10V, V
DS
=15V, R
L
=1.25
Ω
,
R
GEN
=3Ω
Turn-Off Fall Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 3: May 2012 www.aosmd.com Page 2 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
1 1.5 2 2.5 3 3.5 4
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
4
6
8
10
0 5 10 15 20
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=10V
ID=12A
VGS=4.5V
ID=10A
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
0
20
40
60
80
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
3V
10V
4.5V
3.5V
40
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
(Note E)
0
5
10
15
20
25
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=12A
25°C
125°C
Rev 3: May 2012 www.aosmd.com Page 3 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20 25 30 35
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
Coss
C
rss
VDS=15V
ID=12A
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
40
(Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Safe Operating Area (Note F)
RθJC=4.8°C/W
Rev 3: May 2012 www.aosmd.com Page 4 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
25
30
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
50
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
TA=25°C
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Figure 14: Single Pulse Power Rating Junction
-
to
-
Ambient (Note H)
RθJA=75°C/W
Rev 3: May 2012 www.aosmd.com Page 5 of 7
AON7700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
12
0
3
6
9
12
15
0 5 10 15 20 25 30
Irm (A)
Qrr (nC)
IS(A)
Figure 18: Diode Reverse Recovery Charge and Peak
di/dt=800A/µs125ºC
125ºC
25ºC
25ºC
Qrr
Irm
0
0.5
1
1.5
2
2.5
3
0
3
6
9
12
15
0 5 10 15 20 25 30
S
trr (ns)
IS(A)
Figure 19: Diode Reverse Recovery Time and
di/dt=800A/µs
125ºC
125ºC
25ºC
25ºC
trr
S
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0 50 100 150 200
IR(A)
Temperature (°C)
Figure 16: Diode Reverse Leakage Current vs.
Junction Temperature
VDS=15V
VDS=30V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 50 100 150 200
VSD (V)
Temperature (°C)
Figure 17: Diode Forward voltage vs. Junction
Temperature
I
S
=1A
10A
20A
5A
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
0
2
4
6
8
10
0
5
10
15
0 200 400 600 800 1000
Irm (A)
Qrr (nC)
di/dt (A/µ
µµ
µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
125ºC
125ºC
25ºC
25ºC
Is=12A
Q
rr
Irm
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
0
0.5
1
1.5
2
2.5
0
3
6
9
12
15
0 200 400 600 800 1000
S
trr (ns)
di/dt (A/µ
µµ
µs)
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
125ºC
25ºC
25ºC
125ºC
Is=12A
trr
S
Rev 3: May 2012 www.aosmd.com Page 6 of 7
AON7700
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Id
+
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev 3: May 2012 www.aosmd.com Page 7 of 7
