S2A thru S2M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Low forward voltage drop * Low leakage current * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-214AA (SMB) * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 50 V to 1000 V IFSM 50 A IR 1.0 A VF 1.15 V TJ max. 150 C MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code S2A S2B S2D S2G S2J S2K S2M UNIT SA SB SD SG SJ SK SM 100 200 400 600 800 1000 V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL= 100 C IF(AV) 1.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 55 to + 150 C Operating and storage temperature range Revision: 22-Mar-12 Document Number: 88712 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S2A thru S2M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.5 A S2A S2B S2D VF TA = 25 C Maximum DC reverse current at rated DC blocking voltage SYMBOL TA = 125 C S2G S2J S2K S2M 1.15 V 1.0 IR UNIT A 125 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 s Typical junction capacitance 4.0 V, 1 MHz CJ 16 pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SYMBOL PARAMETER Typical thermal resistance (1) S2A S2B S2D S2G RJA 53 RJL 16 S2J S2K S2M UNIT C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE S2J-E3/52T 0.096 52T 750 7" diameter plastic tape and reel S2J-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel S2JHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel S2JHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.75 50 TL = 100 C 8.3 ms Single Half Sine-Wave Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 1.50 1.25 1.00 0.75 60 Hz Resistive or Inductive Load P.C.B. Mounted 0.27" x 0.27" (7.0 mm x 7.0 mm) Copper Pad Areas 0.50 0.25 40 30 20 10 0 0 50 70 90 110 130 150 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 22-Mar-12 Document Number: 88712 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S2A thru S2M www.vishay.com Vishay General Semiconductor 100 TJ = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 TJ = 125 C 1 TJ = 25 C 0.1 0.01 0.3 0.5 0.7 0.9 1.1 1 0.1 1.3 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (C/W) 1000 Instantaneous Reverse Current (A) 10 TJ = 150 C 100 TJ = 125 C 10 1 TJ = 25 C 0.1 0.01 0 20 40 60 80 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 22-Mar-12 Document Number: 88712 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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