SWITCHES - SMT
10
10 - 66
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC232C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8 GHz
v03.1105
General Description
Features
Functional Diagram
The HMC232C8 is a broadband high isolation non-
re ective GaAs MESFET SPDT switch in a non-
hermetic surface mount ceramic package. Covering
DC to 8 GHz, the switch features >55 dB isolation
up to 2 GHz and >42 dB isolation up to 8 GHz. The
switch operates using complementary negative
control voltage logic lines of -5/0V and requires no
bias supply. This product is a form, t & functional
replacement for the HMC132C8.
Isolation: 55 dB @ 2 GHz
43 dB @ 6 GHz
Insertion Loss: 1.6 dB Typical @ 6 GHz
Non-Re ective Design
Surface Mount Ceramic Package
Direct Replacement for HMC132C8
Electrical Speci cations, TA = +25° C, With 0/-5V Control, 50 Ohm System
Typical Applications
The HMC232C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
Parameter Frequency Min. Typ. Max. Units
Insertion Loss
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
1.2
1.6
2.2
1.5
2.0
2.8
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
50
38
37
55
43
42
dB
dB
dB
Return Loss “On State”
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
19
12
10
dB
dB
dB
Return Loss RF1, RF2 “Off State”
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
13
8
7
dB
dB
dB
Input Power for 1 dB Compression 0.5 - 8.0 GHz 22 26 dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 0.5 - 8.0 GHz 40 46 dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz 3
5
ns
ns