© 2005 Microchip Technology Inc. DS21893C-page 1
MCP73861/2/3/4
Features
Linear Charge Management Controllers
- Integrated Pass Transistor
- Integrated Current Sense
- Reverse-Blocki ng Prote ction
High-Accu racy Preset V olt age Regulation : + 0.5%
Four Selectable Voltage Regulation Options:
- 4.1V, 4.2V – MCP73861/3
- 8.2V, 8.4V – MCP73862/4
Programmable Charge Current: 1.2A Maximum
Programmable Safety Charge Timers
Preconditioning of Deeply Depleted Cells
Automatic End-of-Charge Control
Optional Continuous Cell Temperature Monitoring
Charge Status Output for Direct LED Drive
Fault Output for Direct LED Drive
Automatic Power-Down
Thermal Regulation
Temperature Range: -40°C to +85°C
Packaging: 16-Pin, 4 x 4 QFN
16-Pin SOIC
Applications
Lithium-Ion/Lithium-Polymer Battery Chargers
Personal Data Assistants (PDAs)
Cellu lar Telephones
Hand-Held Instruments
Cradle Chargers
•Digital Cameras
MP3 Players
Description
The MCP7 386X f amily of devices are highl y advance d
linear charge management controllers for use in space-
limited, cost-sensitive applications. The devices com-
bine high- accuracy, constant voltage an d curr ent regu-
lation, cell preconditioning, cell temperature monitoring,
advanced s afety timers, auto matic charge termi nation,
internal current sensing, reverse-blocking protection,
charge status and fault indication in either a space-
saving 16-pin, 4 x 4 QFN or 16-pin SOIC package. The
MCP7386X provides a complete, fully-functional, stand-
alone charge management solution with a minimum
number of external components.
The MCP73861/3 is intended for applications utilizing
single-cell Lithium-Ion or Lithium-Polymer battery
packs, while the MCP73862/4 is intended for dual
series cell Lithium-Ion or Lithium-Polymer battery
packs. The MCP73861/3 have two selectable voltage-
regulation options available (4.1V and 4.2V), for use
with either coke or graphite anodes and opera te with an
input voltage range of 4.5V to 12V. The MCP73862/4
have two selectable voltage-regulation options avail-
able (8.2V and 8.4V), for use with coke or graphite
anodes, and operate with an input voltage range of
8.7V to 12V.
The only difference between the MCP73861/2 and
MCP73863/ 4, respectively, is the function of the charge
status output (STAT1) when a charge cycle has been
completed. The MCP73861/2 flash the output, while
the MCP73863/4 turn the output off. Refer to
Section 5.2.1 “Charge Status Outputs
(STAT1,STAT2).
The MCP7386X family of devices are fully specified
over the amb ient temperature rang e of -40°C to +8 5°C.
Package Types
VDD1
VBAT1
THERM EN
TIMER
STAT1
STAT2
1
2
3
4
141516
PROG
VDD2
VSET
THREF
VBAT3
VBAT2
5678
9
10
11
12
VSS2
13
VSS1
MCP73861
MCP73862
MCP73863
MCP73864 VSS3
VDD1
VBAT3
THERM
EN
TIMER
STAT1
STAT2 1
2
3
4
14
15
16
PROG
VDD2
VSET
VSS1
THREF
VBAT1
VBAT2
5
6
7
89
10
11
12
13
VSS2
VSS3
16-Pin SO IC16-Pin QFN
MCP73861
MCP73862
MCP73863
MCP73864
Advanced Single or Dual Cell, Fully Integrated Li-Ion /
Li-Polymer Charge Management Controllers
MCP73861/2/3/4
DS21893C-page 2 © 2005 Microchip Technology Inc.
Typical Application
Functional Block Diagram
EN
STAT1
STAT2
VSET
VDD
VSS
TIMER
PROG
THERM
THREF
VBAT3
VBAT
+
Single
Lithium-Ion
Cell
2, 3
1
MCP73861/3
5
6
7
8
4, 9, 13
10, 11
12
14
16
15
5V
6.19 kΩ
4.7µF
1.2A Lithium-Ion Battery Charger
4.7 µF
7.32 kΩ
0.1
µF
+
Charge
Termination
Comparator
Voltage Control
Amplifier
+
UVLO
COMPARATOR
VUVLO
+
Temperature
Comparators
+
Bias and
Reference
Generator
VUVLO
VREF (1.2V)
Power-On
Delay
+
+
VREF
VREF
Oscillator
IREG/12
Constant-Voltage/
Recharge Comp.
Precondition
Control Charge_OK
Precon
VDD
Char ge Curr en t
Control Amplifier
+
VREF
VREF
+
Precondition
Comp.
Charge Control,
Charge T imers
And Stat us Logi c Drv Stat 2
Drv Stat 1
Charge_OK
IREG/12
VDD1
THERM
EN
TIMER
STAT1
STAT2
VBAT3
VSS1
PROG
VSET
THREF
VBAT1
90
110 kΩ
10 kΩ
10 kΩ
100 kΩ
50 kΩ
50 kΩ
G = 0.001
11 kΩ
1kΩ
600 kΩ
(1.65 MΩ)
148.42 kΩ
1.58 kΩ
VDD2 VBAT2
300.04 kΩ
10.3 kΩ
(8.58 kΩ)
4kΩ
Direction
Control
kΩ
VSS2
VSS3
Values in ( )
reflect the
MCP73862/4
devices
© 2005 Microchip Technology Inc. DS21893C-page 3
MCP73861/2/3/4
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDDN ..............................................................................13.5V
VBATN, VSET, EN, STAT1, STAT2 w .r .t. VSS
.................................................................-0.3 to (VDD + 0.3)V
PROG, THREF, THERM, TIMER w.r.t. VSS..............- 0 .3 to 6 V
Maximum Junction Temperature, TJ............Internally Limi te d
Storage temperature ................... .. .. ..... .. .. .... .-65°C to +150°C
ESD protection on all pins:
Human Body Model (1.5 kΩ in series with 100 pF)....4kV
Machine Model (200 pF, No series resistance) . ..........30 0V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to m aximum rating conditions for ext ended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for V DD= [VREG(typ.) + 0.3V] to 12V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]
Parameters Sym Min Typ Max Unit
sConditions
Supply Input
Supply Voltage VDD 4.5 12 V MCP73861/3
8.7 12 V MCP73862/4
Supply Current ISS 0.17 4 µA Disabled
0.53 4 mA Operating
UVLO Start Threshold VSTART 4.25 4.5 4.65 V MCP73861/3
8.45 8.8 9.05 V MCP73862/4
VDD Low-to-High
UVLO St op Threshold VSTOP 4.20 4.4 4.55 V MCP73861/3
8.40 8.7 8.95 V MCP73862/4
VDD High-to-Low
Voltage Regulation (Constant-Voltage Mode)
Regulated Output Voltage VREG 4.079 4.1 4.121 V MCP73861/3, VSET = VSS
4.179 4.2 4.221 V MCP73861/3, VSET = VDD
8.159 8.2 8.241 V MCP73862/4, VSET = VSS
8.358 8.4 8.442 V MCP73862/4, VSET = VDD
VDD = [VREG(typ.) + 1V],
IOUT =10mA
TA = -5°C to +55°C
Line Regulation |(ΔVBAT/VBAT)
| /ΔVDD
0.025 0.25 %/V VDD = [VREG(typ.)+1V] to 12V
IOUT = 10 m A
Load Regulation VBAT/VBAT| 0.01 0.25 % IOUT = 10 mA to 150 mA
VDD = [VREG(typ.)+1V]
Supply Ripple Attenuation PSRR 60 dB IOUT = 10 mA, 10 Hz to 1 kHz
—42—dBI
OUT = 10 mA, 10 Hz to
10 kHz
—28—dBI
OUT = 10 mA, 10 Hz to 1 MHz
Output Reverse-Leakage
Current IDISCHARGE —0.23 1µAV
DD < VBAT = VREG(typ.)
Current Regulation (Fast Charge Constant-Current Mode)
Fast Charge Current
Regulation IREG 85 100 115 mA PROG = OPEN
1020 1200 1380 mA PROG = VSS
425 500 575 mA PROG = 1.6 kΩ
TA= -5°C to +55°C
MCP73861/2/3/4
DS21893C-page 4 © 2005 Microchip Technology Inc.
Preconditioning Current Regu la t ion (Tr ickle Charge Constant-Current Mode)
Precondition Current
Regulation IPREG 5 10 15 mA PROG = OPEN
60 120 180 mA PROG = VSS
25 50 75 mA PROG = 1.6 kΩ
TA=-5°C to +55°C
Precondition Threshold
Voltage VPTH 2.70 2.80 2.90 V MCP73861/3, VSET = VSS
2.75 2.85 2.95 V MCP73861/3, VSET = VDD
5.40 5.60 5.80 V MCP73862/4, VSET = VSS
5.50 5.70 5.90 V MCP73862/4, VSET = VDD
VBAT Low-to-High
Charge Termination
Charge Termination
Current ITERM 6 8.5 11 mA PROG = OPEN
70 90 120 mA PROG = VSS
32 41 50 mA PROG = 1.6 kΩ
TA=-5°C to +55°C
Automatic Recharge
Recharge Threshold
Voltage VRTH VREG -
300 mV VREG -
200 mV VREG -100 mV V MCP73861/3
VREG -
600 mV VREG -
400 mV VREG -
200 mV VMCP73862/4
VBAT High-to-Low
Thermistor Reference
Thermistor Reference
Output Voltage VTHREF 2.475 2.55 2.625 V TA = 25°C,
VDD = VREG(typ.) + 1V,
ITHREF = 0 mA
Thermistor Reference
Source Current ITHREF 200 µA
Thermistor Reference Line
Regulation |(ΔVTHREF/VT
HREF)|/
ΔVDD
0.1 0.25 %/V VDD = [VREG( typ.) + 1V] to
12V
Thermistor Reference Load
Regulation VTHREF/VT
HREF|
0.01 0.10 % ITHREF = 0 m A to 0.20 m A
Thermistor Comparator
Upper Trip Thre shold VT1 1.18 1.25 1.32 V
Upper Trip Point Hysteresis VT1HYS —-50—mV
Lower Trip Thre shold VT2 0.59 0.62 0.66 V
Lower Trip Point Hysteresis VT2HYS —80—mV
Input Bias Current IBIAS —— 2μA
Status Indicator – STAT1, STAT2
Sink Current ISINK 4812mA
Low Output Voltage VOL 200 400 mV ISINK = 1 mA
Input Leakage Current ILK —0.01 1μAI
SINK = 0 mA, VSTAT1,2 = 12V
Enab le In p ut
Input High Voltage Level VIH 1.4 V
Input Low Voltage Level VIL ——0.8V
Input Leakage Current ILK —0.01 1μAV
ENABLE = 12V
DC CHARACTERISTICS (Continued)
Electrical Specifications: Unless otherwise indicated, all limits apply for V DD= [VREG(typ.) + 0.3V] to 12V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]
Parameters Sym Min Typ Max Unit
sConditions
© 2005 Microchip Technology Inc. DS21893C-page 5
MCP73861/2/3/4
TEMPERATURE SPECIFICATIONS
Therm a l Shutdow n
Die Temperature TSD 155 °C
Die Temperature
Hysteresis TSDHYS —10°C
DC CHARACTERISTICS (Continued)
Electrical Specifications: Unless otherwise indicated, all limits apply for V DD= [VREG(typ.) + 0.3V] to 12V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]
Parameters Sym Min Typ Max Unit
sConditions
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for V DD = [VREG (typ .) + 0.3V] to 12 V,
TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]
Parameters Sym Min Typ Max Units Conditions
UVLO Start Delay tSTART —— 5 msV
DD Low-to-High
Current Regulation
Transition Time Out of
Preconditioning tDELAY —— 1 msV
BAT < VPTH to VBAT > VPTH
Current Rise Time Out of
Preconditioning tRISE —— 1 msI
OUT Rising to 90% of IREG
Fast Charge Safety Timer
Period tFAST 1.1 1.5 1.9 Hours CTIMER = 0.1 µF
Preconditioning Current Regulation
Preconditioning Charge Safety
Timer Period tPRECON 45 60 75 Minutes CTIMER = 0.1 µF
Charge Termination
Elapsed T ime Termination
Period tTERM 2.2 3 3.8 Hours CTIMER = 0.1 µF
Status Indicators
Status Output turn-of f tOFF 200 µs ISINK = 1mA to 0mA
Status Output turn-on tON 200 µs ISINK = 0mA to 1mA
Electrical Specifications: Unless otherwise indicated, all limits apply for V DD = [VREG (typ .) + 0.3V] to 12 V.
Typical values are at +25°C, VDD = [VREG ( typ.) + 1.0V]
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 +85 °C
Operating Temperature Range TJ-40 +125 °C
Storage Temperature Range TA-65 +150 °C
Thermal Package Resistances
Thermal Resistance, 16-lead,
4 mm x 4 mm QFN θJA 37 °C/W 4-Layer JC51-7 S tandard Board,
Natural Convection
Thermal Resistance, 16-lead SOIC θJA 74 °C/W 4-Layer JC51-7 Standard Board,
Natural Convection
MCP73861/2/3/4
DS21893C-page 6 © 2005 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
FIGURE 2-1: Battery Regulation Voltage
(VBAT) vs. Charge Current (IOUT).
FIGURE 2-2: Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
FIGURE 2-3: Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
FIGURE 2-4: Supply Current (ISS) vs.
Charge Current (IOUT).
FIGURE 2-5: Supply Current (ISS) vs.
Supply Voltage (VDD).
FIGURE 2-6: Supply Current (ISS) vs.
Supply Voltage (VDD).
Note: The g r ap hs and t ables provided following thi s n ote are a statis tic al s umm ar y based on a l im ite d n um ber of
samples and are provided for informational purposes only. The performance charac teristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
4.193
4.195
4.197
4.199
4.201
4.203
4.205
4.207
10 100 1000
Charge Current (mA)
Battery Regulation Voltage (V)
MCP73861/3
VSET = VDD
VDD
= 5.2V
3.80
3.90
4.00
4.10
4.20
4.30
4.40
4.5 6.0 7.5 9.0 10.5 12.0
Supply Voltage (V)
Battery Regulation Voltage (V)
MCP73861/3
VSET = V
DD
IOUT
= 1000 mA
4.193
4.195
4.197
4.199
4.201
4.203
4.205
4.207
4.5 6.0 7.5 9.0 10.5 12.0
Suppl y Vol tage (V)
Battery Regulation Voltage (V)
MCP73861/3
VSET = VDD
IOUT = 10 mA
0.40
0.50
0.60
0.70
0.80
0.90
1.00
10 100 1000
Charge Current (mA)
Supply Current (mA)
MCP73861/3
VSET = VDD
VDD
= 5.2V
0.40
0.60
0.80
1.00
1.20
1.40
1.60
4.5 6.0 7.5 9.0 10.5 12.0
Supply Voltage (V)
Supply Current (mA)
MCP73861/3
VSET = VDD
IOUT = 1000 mA
0.40
0.50
0.60
0.70
0.80
0.90
1.00
4.5 6.0 7.5 9.0 10.5 12.0
Supply Voltage (V)
Supply Curr ent (mA)
MCP73861/3
VSET = VDD
IOUT = 10 mA
© 2005 Microchip Technology Inc. DS21893C-page 7
MCP73861/2/3/4
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
FIGURE 2-7: Output Leakage Current
(IDISCHARGE) vs. Battery Regulation Voltage
(VBAT).
FIGURE 2-8: Thermistor Reference
Voltage (VTHREF) vs. Supply Voltage (VDD).
FIGURE 2-9: Thermistor Reference
Voltage (VTHREF) vs. Thermistor Bias Current
(ITHREF).
FIGURE 2-10: Supply Current (ISS) vs.
Ambient Temp eratu re (TA).
FIGURE 2-11: Battery Regulation Voltage
(VBAT) vs. Ambient Temperature (TA).
FIGURE 2-12: Thermistor Reference
Voltage (VTHREF) vs. Ambient Temperature (TA).
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
2.0 2.4 2.8 3.2 3.6 4.0 4.4
Battery Regulation Voltage (V)
Output Leakage Current (µA)
MCP73861/3
VSET = VDD
VDD = VSS
+25°C
-40°C
+85°C
2.500
2.510
2.520
2.530
2.540
2.550
4.5 6.0 7.5 9.0 10.5 12.0
Supply Voltag e (V)
Therm. Reference Voltage (V)
MCP73861/3
VSET = VDD
ITHREF = 100 µA
2.500
2.505
2.510
2.515
2.520
0 25 50 75 100 125 150 175 200
Therm. Bias Current (µA)
Therm. Reference Voltage (V)
MCP73861/3
VSET = VDD
0.40
0.60
0.80
1.00
1.20
1.40
1.60
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambie nt Tem perature (°C)
Supply Current (mA)
MCP73861/3
VSET = VDD
IOUT = 10 m A
4.193
4.195
4.197
4.199
4.201
4.203
4.205
4.207
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temperature (°C)
Battery Regulation Voltage (V)
MCP73861/3
VSET = VDD
IOUT = 10 mA
2.500
2.505
2.510
2.515
2.520
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temperatu r e (° C)
Therm. Ref erence Voltage (V)
MCP73861/3
VSET = VDD
ITHREF = 100 µA
MCP73861/2/3/4
DS21893C-page 8 © 2005 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
FIGURE 2-13: Battery Regulation Voltage
(VBAT) vs. Charge Current (IOUT).
FIGURE 2-14: Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
FIGURE 2-15: Battery Regulation Voltage
(VBAT) vs. Supply Voltage (VDD).
FIGURE 2-16: Supply Current (ISS) vs.
Charge Current (IOUT).
FIGURE 2-17: Supply Current (ISS) vs .
Supply Voltage (VDD).
FIGURE 2-18: Supply Current (ISS) vs.
Supply Voltage (VDD).
8.393
8.395
8.397
8.399
8.401
8.403
8.405
8.407
10 100 1000
Charge Current (mA)
Batter y R egulation Voltage (V)
MCP73862/4
VSET = VDD
VDD = 9.4V
8.393
8.395
8.397
8.399
8.401
8.403
8.405
8.407
10.0 10.4 10.8 11.2 11.6 12.0
Supply Voltage (V)
Battery Regulation Voltage (V
)
MCP73862/4
VSET = VDD
IOUT = 1000 mA
8.398
8.400
8.402
8.404
8.406
8.408
8.410
8.412
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Supply Voltage (V)
Battery Regulation Voltage (V)
MCP73862/4
VSET = VDD
IOUT = 10 mA
0.40
0.50
0.60
0.70
0.80
0.90
1.00
10 100 1000
Charge Current (mA)
Supply Current (mA)
MCP73862/4
VSET = VDD
VDD = 9.4V
0.40
0.60
0.80
1.00
1.20
1.40
1.60
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Supply Voltage (V)
Supply Current (mA)
MCP73862/4
VSET = VDD
IOUT = 1000 mA
0.40
0.50
0.60
0.70
0.80
0.90
1.00
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Supply Voltage (V)
Supply Current (mA)
MCP73862/4
VSET = VDD
IOUT = 10 mA
© 2005 Microchip Technology Inc. DS21893C-page 9
MCP73861/2/3/4
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
FIGURE 2-19: Output Leakage Current
(IDISCHARGE) vs. Battery Regulation Voltage
(VBAT).
FIGURE 2-20: Thermistor Reference
Voltage (VTHREF) vs. Supply Voltage (VDD).
FIGURE 2-21: Thermistor Reference
Voltage (VTHREF) vs. Thermistor Bias Current
(ITHREF).
FIGURE 2-22: Supply Current (ISS) vs.
Ambient Temp eratu re (TA).
FIGURE 2-23: Battery Regulation V oltage
(VBAT) vs. Ambient Temperature (TA).
FIGURE 2-24: Thermistor Reference
Voltage (VTHREF) vs. Ambient Temperature (TA).
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
4.0 4.8 5.6 6.4 7.2 8.0 8.8
Battery Regulation Voltage (V)
Output Leakage Current (µA)
MCP73862/4
VSET = VDD
VDD = VSS
+25°C
-40°C
+85°C
2.530
2.540
2.550
2.560
2.570
9.0 9.5 10.0 10.5 11.0 11.5 12.0
Supply Voltage (V)
Therm. Reference Voltage (V)
MCP73862/4
VSET = VDD
ITHREF = 100 µA
2.540
2.542
2.544
2.546
2.548
2.550
0 25 50 75 100 125 150 175 200
Thermistor Bias Current (µA)
Therm. Refe r ence Voltage (V)
MCP73862/4
VSET = VDD
0.40
0.60
0.80
1.00
1.20
1.40
1.60
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temperature (°C)
Supply Current (mA)
MCP73862/4
VSET = VDD
IOUT = 10 mA
8.386
8.390
8.394
8.398
8.402
8.406
8.410
8.414
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temper a tur e (°C)
Battery Regulation Voltage (V)
MCP73862/4
VSET = VDD
IOUT = 10 mA
2.530
2.534
2.538
2.542
2.546
2.550
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temper a tur e (°C)
Therm. Refer enc e Volt a ge (V )
MCP73862/4
VSET = VDD
ITHREF = 100 µA
MCP73861/2/3/4
DS21893C-page 10 © 2005 Microchip Technology Inc.
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
FIGURE 2-25: Line Transient Response.
FIGURE 2-26: Load Transient Response.
FIGURE 2-27: Power Supply Ripple
Rejection.
FIGURE 2-28: Line Transient Response.
FIGURE 2-29: Load Transient Response.
FIGURE 2-30: Power Supply Ripple
Rejection.
VDD
VBAT
MCP73861
VDD Stepped from 5.2V to 6.2V
IOUT = 10 mA
COUT = 10 µF, X7R, Ceramic
VBAT
IOUT
MCP73861
VDD 5.2V
COUT = 10 µF, X7R, Ceramic
100 mA
10 mA
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (kHz)
Attenuation (dB)
MCP73861
VDD = 5.2V
VAC = 100 mVp-p
IOUT = 10 mA
COUT = 1 0 μF, Ceramic
VDD
VBAT
MCP73861
VDD Stepped from 5.2V to 6.2V
IOUT = 500 mA
COUT = 10 µF, X7R, Ceramic
VBAT
500 mA IOUT
MCP73861
VDD 5.2V
COUT = 10 µF, X7R, Ceramic
10 mA
-80
-70
-60
-50
-40
-30
-20
-10
0
0.01 0.1 1 10 100 1000
Frequency (kHz)
Attenuation (dB)
MCP73861
VDD = 5.2V
VAC = 100 mVp-p
IOUT = 100 mA
COUT = 10 μF, X7R, Ceramic
© 2005 Microchip Technology Inc. DS21893C-page 11
MCP73861/2/3/4
TYPICAL PERFORMANCE CURVES (CONTINUED)
NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.
FIGURE 2-31: Charge Current (IOUT) vs.
Programming Resistor (RPROG). FIGURE 2-32: Charge Current (IOUT) vs.
Ambient Temp eratu re (TA).
0
200
400
600
800
1000
1200
OPEN 4.8k 1.6k 536 0
Programming Resistor (
:
)
Charge Current (mA)
MCP73861/2/3/4
VSET = VDD
493
495
497
499
501
503
505
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
Ambient Temperature (°C)
Charge Current (μA)
MCP73861/2/3/4
VSET = VDD
RPROG = 1.6 k
:
MCP73861/2/3/4
DS21893C-page 12 © 2005 Microchip Technology Inc.
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLES
3.1 Voltage Regulation Selection
(VSET)
MCP73861/3: Connect VSET to VSS for 4.1V regulation
voltage, connect to VDD for 4.2V regulation voltage.
MCP73862/4: Connect VSET to VSS for 8.2V regulation
voltage, connect to VDD for 8.4V regulation voltage.
3.2 Battery Management Input Supp ly
(VDD2, VDD1)
A supply voltage of [VREG (typ.) + 0.3V] to 12V is
recommended. Bypass to VSS with a mini mum of
4.7 µF.
3.3 Battery Management 0V Reference
(VSS1, VSS2, VSS3)
Connect to negative terminal of battery and input
supply.
3.4 Current Regulation Set (PROG)
Preconditioning, fast and termination currents are
scaled by placing a resistor from PROG to VSS.
3.5 Cell Temperature Sensor Bias
(THREF)
THREF is a voltage reference to bias external
thermi stor for co ntinuous cell tem peratur e monitorin g
and prequalification.
3.6 Cell Temperature Sensor Input
(THERM)
THERM is an input for a n external therm istor for contin-
uous cell-temperature monitoring and prequalification.
Connect to THREF/3 to disable temperature sensing.
3.7 Timer Set
All safety timers are scaled by CTIMER/0.1 µF.
3.8 Battery Charge Control Output
(VBAT1, VBAT2)
Connect to positive terminal of battery. Drain terminal
of inte rnal P-c ha nne l MOSFET p ass tran si sto r. Byp as s
to VSS with a minimum of 4. 7 µF to ensure loo p stabilit y
when the battery is disconnected.
3.9 Battery Voltage Sense (VBAT3)
VBAT3 is a voltage sense input. Connect to positive
terminal of battery. A precision internal resi stor divider
regulates the final voltage on this pin to VREG.
3.10 Logic Enable (EN)
EN is an input to force charge termination, initiate
charge, clear faults or disable automatic recharge.
3.11 Fault Status Output (STAT2)
STAT2 is a current-limited, open-drain drive for direct
connection to a LED for charge status indication.
Alternatively, a pull-up resistor can be applied for
interfacing to a host microcontroller.
3.12 Charge Status Output (STAT1)
STAT1 is a current-limited, open-drain drive for direct
connection to a LED for charge status indication.
Alternatively, a pull-up resistor can be applied for
interfacing to a host microcontroller.
Pin No. Symbol Function
QFN SOIC
13 V
SET Voltage Regulation Selection
24 V
DD1 Battery Managem ent Input Supply
35 V
DD2 Battery Managem ent Input Supply
46 V
SS1 Battery Managem ent 0V Reference
5 7 PROG Current Regulation Set
6 8 T HREF Cell Temperature Sensor Bias
7 9 THERM Cell Temperature Sensor Input
810 TIMERTimer Set
911 V
SS3 Battery Managem ent 0V Reference
10 12 VBAT1 Battery Charge Control Output
11 13 VBAT2 Battery Charge Control Output
12 14 VBAT3 Battery Voltage Sense
13 15 VSS2 Battery Management 0V Reference
14 16 EN Logic Enable
15 1 STAT2 Fault Status Output
16 2 STAT1 Charge Status Output
© 2005 Microchip Technology Inc. DS21893C-page 13
MCP73861/2/3/4
4.0 DEVICE OVERVIEW
The MCP7386X family of devices are highly advanced
linear charge management controllers. Refer to the
functional block diagram. Figure 4-2 depicts the
operational flow algorithm from charge initiation to
completion and autom atic recharge.
4.1 Charge Qualification and
Preconditioning
Upon i nsertion of a batte ry , or appl ication of an external
supply, the MCP7386X family of devices automatically
performs a series of safety checks to qualify the
charge. The input source voltage must be above the
Undervoltage Lockout (UVLO) threshold, the enable
pin must be above the logic-high level and the cell
temperature must be within the upper and lower
thresholds. The qualification parameters are
continuously monitored. Deviation beyond the limits
automatic ally suspen ds or terminat es the charge cycle.
The input voltage must deviate below the UVLO stop
threshol d for a t leas t one cloc k peri od to b e con sidere d
valid.
Once the qualification parameters have been met, the
MCP7386X initiates a charge cycle. The charge status
output is pulled low throughout the charge cycle (see
Table 5-1 for charge status outputs). If the battery
voltage is below the preconditioning threshold (VPTH),
the MC P73 86X p rec ond iti ons th e ba tte ry w i th a tric kl e-
charge. The preconditioning current is set to approxi-
mately 10% of the fast charge regulation current. The
preconditioning trickle-charge safely replenishes
deeply depleted cells and minimizes heat dissipation
during the i nitial ch arge cyc le. If the ba ttery volt age ha s
not exceeded the preconditioning threshold before the
preconditioning timer has expired, a fault is indicated
and the charge cycle is terminated.
4.2 Const ant Current Regulation –
Fast Charge
Preconditioning ends, and fast charging begins, when
the batter y voltage exceeds the p reconditioni ng thresh-
old. Fast ch arge regul ates to a co nst ant current (IREG),
which is set via an external resistor connected to the
PROG pin. Fast charge continues until the battery
voltage reaches the regulation voltage (VREG), or the
fast charge timer expires; in which case, a fault is
indicated and the charge cycle is terminated.
4.3 Const ant Voltage Regulation
When the battery voltage reaches the regulation
voltage (VREG), constant voltage regulation begins.
The MCP7386X monitors the battery voltage at the
VBAT pin. This input is tied directly to the positive
terminal of the battery. The MCP7386X selects the
voltage regulation value based on the state of VSET.
With VSET tied to VSS, the MCP73861/3 and
MCP73862/4 regulate to 4.1V and 8.2V, respectively.
With VSET tied to VDD, the MCP73861/3 and
MCP73862/4 regulate to 4.2V and 8.4V, respectively.
4.4 Charge Cycle Completion and
Auto mati c R e -Charge
The MCP7386X monitors the charging current during
the Constant-voltage regulation mode. The charge
cycle is consid ered complete when t he charge current
has diminished below approximately 8% of the
regulation current (IREG), or the elapsed timer has
expired.
The MCP7386X automatically begins a new charge
cycle when t he bat tery v olt age fa lls b elow th e rec harge
threshold (VRTH), assuming all the qualification
parameters are me t.
4.5 Thermal Regulation
The MCP7386X family limits the charge current based
on the die temperature. Thermal regulation optimizes
the charge cycle time while maintaining device reliabil-
ity . I f thermal regulation is entered , the timer is automat-
ically slowed down to ensure that a charge cycle will
not terminate prematurely. Figure 4-1 depicts the
thermal regu lat ion profile.
FIGURE 4-1: Typical Maximum Charge
Current vs. Die Temperature.
4.6 Thermal Shutdown
The MCP7386X family suspends charge if the die
temperature exceeds 155°C. Charging will resume
when th e die tempe rature has c ooled by a pproximat ely
10°C. The thermal shutdown is a secondary safety
feature in the event that there is a failure within the
thermal regu lat ion circu itry.
0
200
400
600
800
1000
1200
1400
0 20 40 60 80 100 120 14
0
Die Temperature (° C)
Maximum Charge Current (mA)
Minimum Maximum
MCP73861/2/3/4
DS21893C-page 14 © 2005 Microchip Technology Inc.
FIGURE 4-2: Operational Flow Algorithm.
Preconditioning Mode
Charge Current = IPREG
Reset Safety Timer
Yes
Initialize
No
Yes
VBAT > VPTH STAT1 = On
VBAT > VPTH
Yes
VDD < VUVLO
No
No
Safety T imer
Yes Temper atu re OK
No
STAT1 = Off
Safety Timer Suspended
Charge Curr ent = 0
Fault
Charge Current = 0
Reset Safety Timer
or EN Low No
STAT1 = Off
Constant-Current Mode
Charge Current = IREG
Reset Safety Timer
VBAT = VREG
No
No
Safety Timer
Yes Temperature OK
Constant-Voltage Mode
Output Voltage = VREG
IOUT < ITERM
Yes
VBAT < VRTH
Elapsed Timer Charge Termination
Charge Current = 0
Reset Safety Timer
No
STAT1 = Flas hing
Yes
Yes
Temperature OK
No
STAT1 = Flashing
Safety Timer Suspende d
Charge Current = 0
Yes
Yes
VDD < VUVLO
or EN Low
No
Yes
Yes
Temperature OK No
STAT1 = Off
Charge Current = 0
Yes
No
STAT1 = Off
VDD > VUVLO
Expired
Expired
No
STAT1 = Off
Safety Timer Suspended
Charge Current = 0
EN High
Expired
Note 1: The qualification parameters are continuously
monit ored throughout the charge cycle. Refe r to
Section 4.1, “Charge Qualification and
Preconditioning”, for details.
Note 2: The charge current will be scaled based on the
die temp erature du ring thermal regulation. R efer
to Section 4.5, “Thermal Regulation”, for
details.
Note 1
Note 1
STAT2 = OnSTAT2 = Flashing
STAT2 = Off
STAT2 = Flashing
STAT2 = Off
Note 2
STAT2 = Flashing
STAT 1 = Off
(MCP73863/4)
(MCP73861/2)
STAT 2 = Off
(All Devices)
© 2005 Microchip Technology Inc. DS21893C-page 15
MCP73861/2/3/4
5.0 DETAILED DESCRIPTION
5.1 Analog Circuitry
5.1.1 BATTERY MANAGEMENT INPUT
SUPP LY (VDD1, VDD2)
The VDD input is the input supply to the MCP7386X.
The MCP7386X automatically enters a Power-down
mode if the voltage on the VDD input falls below the
UVLO vol tage ( VSTOP). This feature prevents draining
the battery pack when the VDD supply is no t pres ent.
5.1.2 PROG INPUT
Fast charge current regulation can be scaled by placing
a pro gr amm in g r es is tor (R PROG) fr om th e P ROG i n pu t
to VSS. Connec ting the PROG inp ut to VSS allows for a
maximum fast charge current of 1.2A, typically. The
minimum fast charge current is 100 mA, set by letting
the PROG input float. The following formula calculates
the value for RPROG:
The preconditioning trickle-charge current and the
charge te rmina tion current are scale d to appro xima tely
10% and 8% of IREG, respectively.
5.1.3 CELL TEMPERATURE SENSOR
BIAS (THREF)
A 2.5V voltage re ference is provided to b ias an ext ernal
thermistor for continuous cell temperature monitoring
and prequ alific ation. A ratio metric w indow c ompar iso n
is performed at threshold levels of VTHREF/2 and
VTHREF/4.
5.1.4 CELL TEMPERATURE SENSOR
INPUT (THERM)
The MCP73861/2/3/4 continuously monitors tempera-
ture by comparing the voltage between the THERM
input and VSS with the upper and lower temperature
thresholds. A negative or positive temperature
coefficient, NTC or PTC thermistor and an external
voltage-divider typically develop this voltage. The
temperature sensing circuit has its own reference to
which it perf orms a ratio m etric com pa rison. Therefo re,
it is immune to fluctuations in the supply input (VDD).
The temperature-sensing circuit is removed from the
system when VDD is not applied, eliminating additional
discharge of the battery pack.
Figure 6-1 depicts a typical application circuit with
connection of the THERM input. The resistor va lues of
RT1 and RT2 are calculated with the following
equations.
For NTC thermistors:
For PTC thermistors:
Applying a voltage equal to VTHREF/3 to the THERM
input disables temperature monitoring.
5.1.5 TIMER SET INPUT (TIMER)
The TIMER input programs the period of the safety
timers by placing a timing capacitor (CTIMER) between
the TIMER input pin and VSS. Three safety timers are
programmed via the timing capacitor.
The preconditioning safety timer period:
The fast charge safety timer period:
The elapsed time termination period:
The preconditioning timer starts after qualification and
resets when the charge cycle transitions to the fast
charge, Constant-current mode. The fast charge time r
and the elapsed timer start once the MCP7386X
transitions from preconditioning. The fast charge timer
resets when the charge cycle transitions to the
Constant-voltage mode. The elapsed timer will expire
and term inate the charge if the sensed current does not
diminish below the termination threshold.
During thermal regulation, the timer is slowed down
propo rtio nal to the charge curren t.
RPROG 13.2 11 IREG
×
12 IREG
×1.2
----------------------------------------
=
where:
IREG = the desired fast charge current in amps
RPROG = measured in kΩ.
RT1 2R
COLD RHOT
××
RCOLD RHOT
----------------------------------------------
=
RT2 2R
COLD RHOT
××
RCOLD 3R×HOT
----------------------------------------------
=
RT1 2R
COLD RHOT
××
RHOT RCOLD
----------------------------------------------
=
RT2 2R
COLD RHOT
××
RHOT 3R×COLD
----------------------------------------------
=
Where:
RCOLD and RHOT are the thermistor
resistance values at the temperature window
of interest.
tPRECON CTIMER
0.1μF
-------------------1.0Hour×s=
tFAST CTIMER
0.1μF
-------------------1.5Hours×=
tTERM CTIMER
0.1μF
-------------------3.0Hours×=
MCP73861/2/3/4
DS21893C-page 16 © 2005 Microchip Technology Inc.
5.1.6 BATTERY VOLTAGE SENSE (VBAT3)
The MCP7386X monitors the battery voltage at the
VBAT3 pin. This input is tied directly to the positive
terminal of the battery pack.
5.1.7 BATTERY CHARGE CONTROL
OUTPUT (VBAT1, VBAT2)
The battery charge control output is the drain terminal
of an internal P-channel MOSFET. The MCP7386X
provides c ons t an t cu rrent and voltag e reg ula tio n to th e
battery pack by controlling this MOSFET in the linear
region. The battery charge control output should be
connected to the positive terminal of the battery pack.
5.2 Digital Circuitry
5.2.1 CHARGE STATUS OUTPUTS
(STAT1,STAT2)
Two status outputs provide information on the state of
charge. The current-limite d, o pe n-dra in outputs can b e
used to illuminate external LEDs. Optionally, a pull-up
resistor can be used on the output for communication
with a host microcontroller. Table 5-1 summarizes the
state of the status outputs during a charge cycle.
The f lashin g rate ( 1 Hz) is b ased off a timer capacito r
(CTIMER) of 0.1 µF. The rate will vary based on the
value of the tim er capacitor.
During a fault condition, the ST AT1 status output will be
off and the STAT2 status output will be on. To recover
from a fault condition, the input voltage must be
removed and then reapplied, or the enable input (EN)
must be de-asserted to a logic-low, then asserted to a
logic-high.
When the voltage on the THERM input is outside the
prese t window, the charge cy cle will not sta rt, or will be
suspended. The charge cycle is not terminated and
recovery is au tomatic. The ch arge cycle will resum e (or
start) once the THERM input is valid and all other
qualification parameters are met. During an invalid
THERM condition, the STAT1 status output will be off
and the STAT2 status output will flash.
5.2.2 VSET INPUT
The VSET input selects the regulated output voltage of
the MCP7386X. With VSET tied to VSS, the
MCP73861/3 and MCP73862/4 regulate to 4.1V and
8.2V, respectively. With VSET tied to VDD, the
MCP73861/3 and MCP73862/4 regulate to 4.2V and
8.4V, respectively.
5.2.3 LOGIC ENABLE (EN)
The logic enable input pin (EN) can be used to
terminat e a ch arge at an y time du ring the c harge cycle,
as well as to initiate a charge cycle or initiate a rec harge
cycle.
Applyin g a logic -high in put signa l to t he EN pin, o r tying
it to the input source, enables the device. Applying a
logic-low input signal disables the device and termi-
nates a charge cycle. When disabled, the device’s
supply current is reduced to 0.17 µA, typically.
TABLE 5-1: S TATUS OUTPUTS (NOTE)
CHARGE
CYCLE STAT1 STAT1 STAT2
Qualification Off Off
Preconditioning On Off
Constant-
Current Fast
Charge
On Off
Constant-
Voltage On Off
Charge
Complete Flashing (1 Hz,
50% duty cycle)
(MCP73861/2) Off
(All Devices)
Off
(MCP73863/4)
Fault Off On
THERM Invalid Off Flashing (1 Hz,
50% duty cycle)
Disabled
Sleep mode Off Off
Input Voltage
Disconnected Off Off
Note: Off state: Open-drain is high-impedance
On state: Open-drain can sink current
typically 7 mA
Flashing: Toggles between off state and
on state
© 2005 Microchip Technology Inc. DS21893C-page 17
MCP73861/2/3/4
6.0 APPLICATIONS
The MCP7386X is designed to operate in conjunction
with a host microcontroller or in stand-alone applica-
tions. The MCP7386X provides the preferred charge
algorithm for Lithium-Ion and Lithium-Polymer cells
Constant-current followed by Constant-voltage.
Figure 6-1 depicts a typical stand-alone application
circuit, while Figures 6-2 and 6-3 depict the
accompanyi ng ch arge pr o fil e.
FIGURE 6-1: Typic al App li ca tio n Circui t.
FIGURE 6-2: Typic al Char ge Prof il e.
ENSTAT1
STAT2
VSET
VSS3
VDD1
VDD2
VSS2
TIMERPROG
THERM
THREF
VBAT3
VBAT2
VBAT1
CTIMER
Unregulated
Wall Cube
RPROG
RT1
RT2
+
Single
Lithium-Ion
Cell
VSS1
1
2
3
4
MCP73861
141516
5678
9
10
11
12
13
Regulation
Voltage
(VREG)
Regulation
Current
(IREG)
Transition
Threshold
(VPTH)
Precondition
Current
(IPREG)
Precondition
Safety Timer Fast Charge
Safety Timer Elapsed Time
Termination Timer
Charge
Voltage
Preconditioning
Mode Constant-Current
Mode Constant-Voltage
Mode
Charge
Current
Termination
Current
(ITERM)
MCP73861/2/3/4
DS21893C-page 18 © 2005 Microchip Technology Inc.
FIGURE 6-3: Typical Charge Profile in Thermal Regulation.
6.1 Application Circuit Design
Due to the low efficiency of linear charging, the most
important factors are thermal design and cost, which
are a di rect functio n of the in put volt age , out put current
and thermal impedance between the battery charger
and the a mbient c ooling ai r . The w orst-case s ituation is
when the device has transitioned from the
Preconditio ning mode to the Constant-c urrent mode. In
this situation, the battery charger has to dissipate the
maximum power. A trade-off must be made between
the charge current, cost and thermal requirements of
the charger.
6.1.1 COMPONENT SELECTION
Selection of the external components in Figure 6-1 is
crucial to the integrity and reliability of the charging
system. The following discussion is intended as a guide
for the component selection process.
6.1.1.1 Current Prog ra mmi ng Resis tor
(RPROG)
The preferred fast charge current for Lithium-Ion cells
is at the 1C rate, with an absolute maximum current at
the 2C rate. For example, a 500 mAh battery pack has
a preferred fast charge curr ent of 500 mA. Charging at
this rate provides the shortest charge cycle times with-
out degra dation to th e battery p ack perform ance or lif e.
1200 mA is the maximum charge current obtainable
from the MCP7386X. For this situation, the PROG input
should be connected directly to VSS.
6.1.1.2 Thermal Considerations
The worst-case power dissipation in the battery
charger occurs when the input voltage is at the
maximum and the device has transitioned from the
Precondi tioning mode to the Co nstant-curren t mode. In
this case, the power dissipation is:
Regulation
Voltage
(VREG)
Regulation
Current
(IREG)
Transition
Threshold
(VPTH)
Precondition
Safety Timer Fast Charge
Safety Timer Elapsed Time
Termination Timer
Charge
Voltage
Preconditioning
Mode Constant-Current
Mode Constant-Voltage
Mode
Charge
Current
Precondition
Current
(IPREG)
Termination
Current
(ITERM)
PowerDissipation VDDMAX VPTHMIN
()IREGMAX
×=
Where:
VDDMAX = the maximum input voltage
IREGMAX = the maximum fast charge current
VPTHMIN = the minimum transition threshold
voltage
© 2005 Microchip Technology Inc. DS21893C-page 19
MCP73861/2/3/4
Power di ssipatio n with a 5V, ± 10% inp ut voltag e source
is:
With the battery charger mounted on a 1 in2 pad of
1 oz. copper, the junction temperature rise is 60°C,
approxi mately. This would a llow for a maximum oper at-
ing ambient temperature of 50°C before thermal
regulation is entered.
6.1.1.3 External Capacitors
The MCP7 386X is stable w ith or without a ba ttery load.
In order to maintain good AC stability in the Constant-
voltage mode, a minimum capacitance of 4.7 µF is
recommended to bypass the VBAT pin to VSS. This
capacitance provides compensation when there is no
battery load. In addition, the battery and interconnec-
tions appear inductive at high frequencies. These
elements are in the control feedback loop during
Constant-volt ag e mo de . There f ore , the by p a ss capaci-
tance may be necessary to compensate for the
inductiv e nature of the battery pack.
Virtually any good quality output filter capacitor can be
used, independent of the capacitor’s minimum
Effective Series Resistance (ESR) value. The actual
value of the capacitor (and its associated ESR)
depends on the output load current. A 4.7 µF ceramic,
tantalum or aluminum electrolytic capacitor at the
output is usual ly s uf ficien t to ensure st abi lit y for up to a
1A output current.
6.1.1.4 Revers e-Bl ocki ng Prote cti on
The MCP7386X provides protection from a faulted or
shorted in put, or from a revers ed-p ol arit y inp ut so urc e.
Without t he p rotecti on, a fa ulted o r shorte d inpu t woul d
discharge the battery pack through the body diode of
the internal pass transistor.
6.1.1.5 Enable Interface
In the stand-alone configuration, the enable pin is
generally tied to the input voltage. The MCP7386X
automatically enters a Low-power mode when voltage
on the VDD input fal ls below the UV LO voltag e (VSTOP),
reducing the battery drain current to 0.23 µA, typically.
6.1.1.6 Charge Status Interface
Two status outputs provide information on the state of
charge. The cu rrent-lim ited, ope n-drain outp uts can be
used to illum inate extern al LEDs. Refer to Table 5-1 for
a summary of the state of the status outputs during a
charge cycle.
6.2 PCB Layout Issues
For optimum voltage regu lation, place the batte ry pack
as clos e as possi ble to the de vice’ s VBAT and VSS pins,
recommended to minimize voltage drops along the
high current-carrying PCB traces.
If the PCB layout is used as a heatsink, adding many
vias in the hea tsink pad c an h elp conduct more h eat to
the backp lane of the PCB, thus reduc ing the ma ximum
junction temperature.
PowerDissipation 5.5V 2.7V()575mA×1.61W==
MCP73861/2/3/4
DS21893C-page 20 © 2005 Microchip Technology Inc.
7.0 PACKAGING INFORMATION
7.1 Package Marking Information
1
2
3
4
141516
5678
9
10
11
12
13
16-Lead QFN*Example:
XXXXXXXX
XXXXXXXX
YYWW
NNN
1
2
3
4
141516
5678
9
10
11
12
13
73861
I/ML
0532
256
16-Lead SOIC (150 mil) Example:
XXXXXXXXXXXXX
YYWWNNN
XXXXXXXXXXXXX MCP73861
0532256
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu me ric trac ea bil ity code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free J EDEC desig nator ( )
can be found on the outer packaging for this package.
Note: In the event the fu ll Micr ochip part nu mber ca nnot be m arked on one line, it w ill
be carried over to the next line, thus limiting the number of available
characte rs for customer-specific information.
3
e
3
e
I/SL^^
3
e
© 2005 Microchip Technology Inc. DS21893C-page 21
MCP73861/2/3/4
16-Lead Plastic Quad Flat No-Lead Package (ML) 4x4x0.9 mm Body (QFN) – Saw Singulated
2
1
n
D
EE2
D2
e
b
L
AA3
EXPOSED
METAL
PAD
OPTIONAL
INDEX
AREA
TOP VIEW BOTTOM VIEW
(NOTE 2)
(NOTE 1)
A1
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
JEDEC equivalent: M0-220
See ASME Y14.5M
See ASME Y14.5M Revised 07-21-05
*
Controlling Parameter
Notes:
INCHES
NOM
.026 BSC
.008 REF
Number of Pins
Overall Height
Overall Width
Contact Width
Overall Length
Contact Length
Exposed Pad Width
Exposed Pad Length
Contact Thickness
Pitch
Standoff
Units
Dimension Limits
e
E2
b
L
D2
D
A3
E
A1
A
.090
.010
.012
.152
.090
.152
.000
.031
MIN
nMIN
.104
.157
.012
.104
.016
.035
.157
.001
.106
.014
.163
.106
.020
.039
.163
.002
MAX
16 0.65 BSC
0.20 REF
2.29
3.85
0.25
2.29
0.30
0.80
3.85
0.00
2.64
0.30
4.00
2.64
0.40
0.90
4.00
0.02
NOM
MILLIMETERS
*
16
2.69
0.35
4.15
2.69
0.50
1.00
4.15
0.05
MAX
Pin 1 visual index feature may vary, but must be located within the hatched area.
Exposed pad varies according to die attach paddle size.
2.
1.
Drawing No. C04-127
MCP73861/2/3/4
DS21893C-page 22 © 2005 Microchip Technology Inc.
16-Lead Plastic Small Outline (SL) – Narrow 150 mil Body (SOIC)
Foot A ngle φ048048
1512015120
β
Mold Draft Angle Bottom 1512015120
α
Mold Draft Angle Top 0.510.420.33.020.017.013BLead Width 0.250.230.20.010.009.008
c
Lead Thickness
1.270.840.41.050.033.016LFoot Length 0.510.380.25.020.015.010hChamfer Distance 10.019.919.80.394.390.386DOverall Length 3.993.903.81.157.154.150E1Molded Pa ckag e Width 6.206.025.79.244.237.228EOverall Width 0.250.180.10.010.007.004A1Standoff §1.551.441.32.061.057.052A2Molded Packag e Thickness 1.751.551.35.069.061.053AOverall Height 1.27
.050
p
Pitch 1616
n
Numb er of Pin s MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units
α
A2
E1
1
2
L
h
n
B
45°
E
p
D
φ
β
c
A1
A
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-108
§ Significant Characteristic
© 2005 Microchip Technology Inc. DS21893C-page 23
MCP73861/2/3/4
APPENDIX A: REVISION HISTORY
Revision C (August 2005)
The following is the list of modifications:
1. Added MCP73863 and MCP73864 devices
throughout data sheet.
2. Added Appendix A: Revision History.
3. Updated QFN and SOIC package diagrams.
Revision B (December 2004)
Added SOIC package throughout data sheet.
Revision A (June 2004)
Origin al Release of thi s Document.
MCP73861/2/3/4
DS21893C-page 24 © 2005 Microchip Technology Inc.
NOTES:
© 2005 Microchip Technology Inc. DS21893C-page 25
MCP73861/2/3/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device MCP7386 1: Single -Cell Char ge C ont roll e r with
Temperature Monitor
MCP73861T: Single -Cel l C har ge Cont rol le r with
Temperature Monitor, Tape and Reel
MCP73862: Dual Series Cells Charge Controller with
Temperature Monitor
MCP73862T: Dual Series Cells Charge Controller with
Temperature Monitor, Tape and Reel
MCP73863: Single-cell Charge Controller with
Temperature Monitor
MCP73863T: Single -Cel l C har ge Cont rol le r with
Temperature Monitor, Tape and Reel
MCP73864: Dual Series Cells Charge Controller with
Temperature Monitor
MCP73864T: Dual Series Cells Charge Controller with
Temperature Monitor, Tape and Reel
Temp er atu re R ang e I = -40°C to +85°C (Industrial)
Packages ML = Plastic Quad Flat No Lead, 4x4 mm Body (QFN),
16-lead
SL = Plastic Small Outline, 150 mm Body (SOIC),
16-lead
PART NO. XXX
PackageTemperature
Range
Device
Examples:
a) MCP73861-I/ML: Single-Cell Controller
16LD-QFN package.
b) MCP73861T-I/ML: Tape and Reel,
Single-Cell Controller
16LD-QFN package.
c) MCP73861-I/SL: Single-Cell Controller
16LD-SOIC package.
d) MCP73861T-I/SL: Tape and Reel,
Single-Cell Controller
16LD-SOIC package.
a) MCP73862-I/ML: Dual-Cell Controller
16LD-QFN package.
b) MCP73862T-I/ML: Tape and Reel,
Dual-Cell Controller
16LD-QFN package.
c) MCP73862-I/SL: Dual-Cell Controller
16LD-SOIC package.
d) MCP73862T-I/SL: Tape and Reel,
Dual-Cell Controller
16LD-SOIC package.
a) MCP73863-I/ML: Single-Cell Controller
16LD-QFN package.
b) MCP73863T-I/ML: Tape and Reel,
Single-Cell Controller
16LD-QFN package.
c) MCP73863-I/SL: Single-Cell Controller
16LD-SOIC package.
d) MCP73863T-I/SL: Tape and Reel,
Single-Cell Controller
16LD-SOIC package.
a) MCP73864-I/ML: Dual-Cell Controller
16LD-QFN package.
b) MCP73864T-I/ML: Tape and Reel,
Dual-Cell Controller
16LD-QFN package.
c) MCP73864-I/SL: Dual-Cell Controller
16LD-SOIC package.
d) MCP73864T-I/SL: Tape and Reel,
Dual-Cell Controller
16LD-SOIC package.
MCP73861/2/3/4
DS21893C-page 26 © 2005 Microchip Technology Inc.
NOTES:
© 2005 Microchip Technology Inc. DS21893C-page 27
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-
RANTIES OF ANY KIN D WHETHER EXPRESS OR IMPLIED ,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. U se of Microc hip’s products as critical com ponents in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,
PICSTA RT, PRO MATE, PowerSma rt , rfPIC, and
SmartShunt are registered trademark s of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDE V, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Linear Active Thermistor,
MPASM, MPLIB, MPL I NK, MPSIM, PICkit, PICDEM,
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,
PowerMate, Powe rTool, rfLAB, rfPICD EM , Select Mode,
Smart Serial, SmartTel, Total Endurance and WiperLock are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of it s kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellec tual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is c onstantly evolving. We a t Microchip are committed to continuously improving t he c ode protect ion f eatures of our
products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, micro peripherals, nonvolat ile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21893C-page 28 © 2005 Microchip Technology Inc.
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08/24/05